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Method for preparing high-performance lead zirconate titanate piezoelectric film bottom electrode

A lead zirconate titanate piezoelectric and lead zirconate titanate technology is applied in the manufacture/assembly of piezoelectric/electrostrictive devices, etc., to improve the degree of preferred orientation and electrical properties, excellent dielectric properties, and reduce production costs. Effect

Inactive Publication Date: 2019-08-09
大连瑞林数字印刷技术有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Meanwhile, many studies have reported that the diffusion of substrate Ti atoms has a great influence on the growth of PZT thin films.

Method used

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  • Method for preparing high-performance lead zirconate titanate piezoelectric film bottom electrode
  • Method for preparing high-performance lead zirconate titanate piezoelectric film bottom electrode
  • Method for preparing high-performance lead zirconate titanate piezoelectric film bottom electrode

Examples

Experimental program
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Effect test

Embodiment 1

[0038] This example provides the Pt / Ti / SiO 2 The preparation method of the (100) preferred orientation lead zirconate titanate piezoelectric film deposited on the / Si bottom electrode, the steps are specifically:

[0039]S101, the preparation chemical formula is Pb(Zr y Ti 1-y )O 3 The lead zirconate titanate precursor solution

[0040] In order to compensate for the loss of lead in the post-annealing process, an excess of 20% of the lead element is considered in the batching. First measure 1.7mL acetylacetone solution, then dissolve 2.9mL tetrabutyl titanate in acetylacetone and raise the temperature to 50°C, keep it warm for 80 minutes; then add 4.02g zirconium nitrate, 10.53g lead acetate and 26mL ethylene glycol Methyl ether, stir evenly, heat up to 70°C, keep warm for 80 minutes; then add 1.8mL formamide, stir evenly and cool down to 50°C, keep warm for 80 minutes; finally add 12mL acetic acid solution and keep warm for 80 minutes, the pH value is 3.5 1. A lead zirco...

Embodiment 2

[0051] This embodiment provides Pt-Ti / Ti / SiO 2 The preparation method of the (100) preferred orientation lead zirconate titanate piezoelectric film deposited on the / Si bottom electrode, the steps are specifically:

[0052] S201, preparing Pt-Ti / Ti / SiO 2 / Si bottom electrode

[0053] Formation of 100nm thick SiO by dry oxidation on a two-inch Si wafer 2 layer, and then put the Si sheet on the sample stage of the magnetron sputtering instrument to deposit metal electrodes. Before deposition, the background vacuum of the sputtering apparatus was pumped to 3.0×10 -5 Pa, then fill in pure Ar gas and adjust the deposition pressure to 1Pa, turn on the DC power supply corresponding to the Ti target and set the sputtering power to 80W, open the sample baffle after glowing, and control the deposition time to 5min, first in SiO 2 A pure metal Ti layer with a thickness of 60nm was prepared on the / Si substrate. After the deposition of the pure Ti layer, close the sample baffle and a...

Embodiment 3

[0062] This embodiment provides Pt-Ti / Ti / SiO 2 The preparation method of the (100) preferred orientation lead zirconate titanate piezoelectric film deposited on the / Si bottom electrode, the steps are specifically:

[0063] S301, preparing Pt-Ti / Ti / SiO 2 / Si bottom electrode

[0064] Formation of 100nm thick SiO by dry oxidation on a two-inch Si wafer 2 layer, and then put the Si sheet on the sample stage of the magnetron sputtering instrument to deposit metal electrodes. Before deposition, the background vacuum of the sputtering apparatus was pumped to 5.0×10 -5 Pa, then fill in pure Ar gas and adjust the deposition pressure to 1.2Pa, turn on the DC power supply corresponding to the Ti target and set the sputtering power to 50W, open the sample baffle after glowing, control the deposition time to 8min, first in SiO 2 A pure metal Ti layer with a thickness of 50nm was prepared on the / Si substrate. After the deposition of the pure Ti layer, close the sample baffle and adj...

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Abstract

The invention relates to a method for preparing a high-performance lead zirconate titanate piezoelectric film bottom electrode, and belongs to the field of film piezoelectric material preparation. Themethod comprises the steps of: 1) preparing a Pt-Ti / Ti / SiO2 / Si bottom electrode material on a SiO2 / Si substrate by magnetron sputtering; 2) preparing a lead zirconate titanate precursor solution having a chemical formula of Pb(ZryTi1-y)O3 by using lead acetate, zirconium nitrate and tetrabutyl titanate as raw materials, by using acetyl acetone and formamide as stabilizers, and by using ethylene glycol methyl ether as a solvent; and 3) depositing the lead zirconate titanate precursor solution on Pt-Ti / Ti / SiO2 / Si and Pt / Ti / SiO2 / Si bottom electrodes separately and performing a heat treatment, and repeating the deposition and heat treatment step a plurality of times to obtain (100) the lead zirconate titanate piezoelectric film with preferred orientation. The preparation method of the invention can obtain (100) the lead zirconate titanate piezoelectric film having a high degree of preferred orientation.

Description

technical field [0001] The invention belongs to the field of thin-film piezoelectric material preparation, in particular to a method for preparing a high-performance lead zirconate titanate piezoelectric thin-film bottom electrode. Background technique [0002] Lead zirconate titanate (referred to as PZT) is an ABO 3 type perovskite piezoelectric material, its chemical formula is Pb(Zr y Ti 1-y )O 3 , when the atomic ratio Zr / Ti=0.52:0.48 or 0.53:0.47, the material has good piezoelectric, dielectric and ferroelectric properties. [0003] In general, the PZT thin film used as a driving unit in a micro-electromechanical system generally needs to have better piezoelectric properties. Studies have shown that PZT piezoelectric films with high (100) preferred orientation have higher piezoelectric coefficients, which will be more advantageous when applied to micro-actuating devices. In addition, the base material of the PZT thin film has a great influence on the growth and per...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/37H10N30/092
CPCH10N30/092
Inventor 韩梅王兴王富安王力成
Owner 大连瑞林数字印刷技术有限公司
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