Silicon carbide crystal and preparation method thereof

Abstract

The invention relates to a silicon carbide crystal and a preparation method thereof, belonging to the field of crystal material preparation. The preparation method of the silicon carbide crystal comprises the following steps of: sublimating the raw materials in the crucible main body, and carrying out gas phase transmission to the surface of a seed crystal through a spiral gas flow channel formedby at least one spiral clapboard component to carry out crystal growth to prepare the silicon carbide crystal. The preparation method of the silicon carbide crystal disclosed by the invention changesthe gas phase transmission mode for preparing the carbonized single crystal by the traditional PVT method, converts the traditional vertical upward transmission into spiral upward transmission, realizes effective blocking of large particle impurities in the crystal growth process, reduces the defect density in the crystal, and improves the crystal quality. The energy consumption is reduced. The application can control the gas phase transmission under vacuum, the single crystal growth rate under vacuum is fast, the growth temperature is low, and the gas phase can be transmitted upwards in an orderly way, the defects of the grown crystals are few, and the cost is reduced and the efficiency is increased.

Description

technical field [0001] The application relates to a silicon carbide crystal and a preparation method thereof, belonging to the field of crystal material preparation. Background technique [0002] Silicon carbide is a typical wide bandgap semiconductor material and one of the representatives of the third generation of semiconductor materials after silicon and gallium arsenide. Silicon carbide materials have excellent characteristics such as high thermal conductivity, high breakdown field strength, and high saturation electron mobility, and have become one of the popular materials for preparing high-temperature, high-frequency, high-power and radiation-resistant devices. [0003] At present, the methods of silicon carbide growth mainly include physical vapor transport (PVT), liquid phase epitaxy (LPE), chemical vapor deposition (CVD), etc. Among them, PVT method is the most mature method and the only one that can be used at present. Provides the growth method required by comm...

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Problems solved by technology

[0005] In order to solve the above problems, this application proposes a silicon carbide crystal and its preparation method. This application changes the gas-phase transport mode of the traditional PVT method for preparing silicon carbide single crystals, and converts the traditional vertical upward transport to spiral upward transport to achieve Effective blocking of large particles of impurities in the crystal growth process, reducing the defect density in the crystal and improving the quality of the crystal; and it will not cause difficulty in gas phase upward transmission, without excessive growth temperature, and reduce energy consumption; this application can be used for vacuum Gas phase transmission plays a controlling role. The single crystal growth rate under vacuum is fast, the growth temperature is low, and the gas phase can be transported upwards in an orderly manner. The grown crystal has fewer defects, reducing costs and increasing efficiency.

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