A Raman amplifier based on graphene and silicon-based nanowires and its preparation method

Abstract

The invention provides a graphene and silicon-based nano wire based Raman amplifier and preparation method thereof. An isolation layer is made on silicon-based nano wires, insulator silicon and an insulating layer, and a graphene layer covers the isolation layer. A Raman amplification effect of the silicon-based nano wires on a transmitted pilot light is enhanced via a coupling effect between surface plasmon of the graphene and an optical waveguide mode of the silicon-based nano wires, so that a better Raman amplification effect can be realized without pump light of high pumping power. Light is gathered in the silicon-based nano wires by using the characteristics of high light refractive index and high light absorption of graphene. In addition, compared with that other modules are integrated to silicon, graphene is easy to be compatible with a silicon based photoelectronic platform and CMOS integration technology, and can be integrated to the light interconnection network in large scale.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a Raman amplifier based on graphene and silicon-based nanowires and a preparation method thereof. Background technique [0002] In recent years, with the continuous emergence of various emerging services such as cloud computing, virtualization, high-definition video, e-commerce, social networking, and rapidly developing high-speed wireless networks, the total global Internet traffic continues to increase, which will promote the next generation of supercomputers and cloud data. The center is developing towards a large-bandwidth, small-size, high-performance on-chip optical interconnection network. Before optical interconnection is widely used, short-distance communication generally uses copper cables for electrical interconnection. However, electrical interconnection has disadvantages such as small transmission bandwidth, large delay, large crosstalk between h...

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Problems solved by technology

[0008] The embodiment of the present invention provides a Raman amplifier based on graphene and silicon-based nanowires and its preparation method, which is used to solve the problem that Raman amplifiers in the prior art require high pumping power to produce better Raman. Amplification effect, the Raman amplification effect of the Raman amplifier is small, and it is not conducive to the problem of integration with other devices

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