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Compound, resin, composition, and method for forming pattern

A compound and carbon number technology, applied in organic chemistry, photoengraving process of pattern surface, coating, etc., can solve the problems of resist pattern collapse, resolution problem, difficulty in obtaining resist pattern, etc.

Inactive Publication Date: 2019-09-03
MITSUBISHI GAS CHEM CO INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In addition, if the miniaturization of the resist pattern is promoted, there will be problems such as resolution problems and resist pattern collapse after development, so it is desired to reduce the thickness of the resist.
However, it becomes difficult to obtain a film thickness of a resist pattern sufficient for substrate processing only by thinning the resist

Method used

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  • Compound, resin, composition, and method for forming pattern
  • Compound, resin, composition, and method for forming pattern
  • Compound, resin, composition, and method for forming pattern

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0858] Hereinafter, this embodiment will be described in more detail based on synthesis examples and examples, but this embodiment is not limited to these examples at all.

[0859] (carbon concentration and oxygen concentration)

[0860] Carbon concentration and oxygen concentration (mass %) were measured by organic elemental analysis.

[0861] Device: CHN CORDER MT-6 (manufactured by Yanac Analytical Industry Co., Ltd.)

[0862] (molecular weight)

[0863] The molecular weight of the compound was measured by LC-MS analysis using Acquity UPLC / MALDI-Synapt HDMS manufactured by Water Corporation.

[0864] In addition, gel permeation chromatography (GPC) analysis was carried out under the following conditions to obtain polystyrene-equivalent weight average molecular weight (Mw), number average molecular weight (Mn), and degree of dispersion (Mw / Mn).

[0865]Device: Shodex GPC-101 (manufactured by Showa Denko Co., Ltd.)

[0866] Column: KF-80M×3

[0867] Eluent: THF 1mL / min ...

Synthetic example 1A

[0879] Synthesis of E-XBisN-1

[0880] In a container with an internal volume of 100 ml equipped with a stirrer, a condenser and a burette, 10 g (21 mmol) of the compound (XBisN-1) shown in the above formula and 14.8 g (107 mmol) of potassium carbonate were dropped into 50 ml of dimethylformamide, 6.56 g (54 mmol) of 2-chloroethyl acetate was added, and the reaction solution was stirred at 90° C. for 12 hours to react. Next, the reaction solution was cooled in an ice bath to precipitate crystals, which were filtered and separated. Next, 40 g of the aforementioned crystals, 40 g of methanol, 100 g of THF and 24% aqueous sodium hydroxide solution were put into a container with an inner volume of 100 ml including a stirrer, a condenser, and a burette, and the reaction solution was stirred under reflux for 4 hours to react. Thereafter, the mixture was cooled in an ice bath, the reaction solution was concentrated, and the precipitated solid was filtered and dried, followed by sep...

Synthetic example 2A

[0892] 11.2 g (21 mmol) of the compound (BisF-1) represented by the above formula and 14.8 g (107 mmol) of potassium carbonate were added to 50 ml of dimethylformamide in a container with an internal volume of 100 ml including a stirrer, a condenser, and a burette. , 6.56 g (54 mmol) of 2-chloroethyl acetate was added, and the reaction solution was stirred at 90° C. for 12 hours to react. Next, the reaction solution was cooled in an ice bath to precipitate crystals, which were filtered and separated. Next, 40 g of the aforementioned crystals, 40 g of methanol, 100 g of THF and 24% aqueous sodium hydroxide solution were put into a container with an inner volume of 100 ml including a stirrer, a condenser, and a burette, and the reaction solution was stirred under reflux for 4 hours to react. Thereafter, it was cooled in an ice bath, the reaction solution was concentrated, and the precipitated solid was filtered and dried, followed by separation and purification by column chromat...

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Abstract

The invention provides a compound represented by formula (0).

Description

technical field [0001] The present invention relates to compounds having specific structures, resins and compositions containing them. In addition, it relates to a pattern forming method using the composition. Background technique [0002] In the manufacture of semiconductor devices, microfabrication by photolithography using photoresist materials is performed, but in recent years, with the high integration and high speed of LSIs, further miniaturization by pattern rules is required. In addition, the light source for lithography used in resist pattern formation has been shortened from KrF excimer laser (248nm) to ArF excimer laser (193nm), and the introduction of extreme ultraviolet light (EUV, 13.5nm) is also expected. [0003] However, in photolithography using conventional polymer resist materials, the molecular weight is as large as 10,000 to 100,000, and the molecular weight distribution is also wide. Therefore, roughness occurs on the surface of the pattern, making it...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07C43/215C07D311/78C08G8/00G03F7/039G03F7/11
CPCC07C43/215C07D311/78C08G8/00C07C2601/14C07C43/23G03F7/094G03F7/0382G03F7/025G03F7/039G03F7/11G03F7/004G03F7/0045G03F7/20C08G61/02C08G61/12C07C2601/16C08F136/20C09D147/00G03F7/162G03F7/2059G03F7/30
Inventor 越后雅敏
Owner MITSUBISHI GAS CHEM CO INC
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