A kind of array substrate and preparation method thereof

Abstract

The invention provides an array substrate and a preparation method thereof. According to the method, a layer of alkyl aluminum material solution is formed on the surface of a substrate with a thin film transistor; the alkyl aluminum material solution is subjected to a chemical reaction with water vapor to generate hydroxyl aluminum oxide and alkyl gas; the hydroxyl aluminum oxide is attached to the substrate to form a hydroxyl aluminum oxide film; the alkyl gas is discharged through a gas extraction system of a reaction chamber; and then a silicon nitride film is formed on the hydroxyl aluminum oxide film, so that a passivation layer of a composite structure of the hydroxyl aluminum oxide film and the silicon nitride film is formed. The hydroxyl aluminum oxide film is adopted to replace asilicon dioxide film in a conventional passivation layer, so that the energy consumption and the cost are relatively low, and the problem that the performance of a device is influenced due to the factthat an H element enters an indium gallium zinc oxide semiconductor layer can be solved.

Description

technical field [0001] The present application relates to the field of display technology, in particular to an array substrate and a preparation method thereof. Background technique [0002] Due to its high carrier mobility, IGZO (Indium Gallium Zinc Oxide) is considered to be an ideal semiconductor layer material in next-generation TFT devices. However, IGZO itself is unstable, and contact with H2O, O2, and excessive doping of H elements will deteriorate the performance of IGZO thin films. Therefore, the PV layer (passivation layer) of IGZO at this stage often adopts a double-layer structure of SiO2+SiNx. At present, SiO2 thin films are mainly prepared by CVD method; CVD film formation has a series of problems such as expensive equipment and high energy consumption (vacuumizing, heating). What is more worth mentioning is that in the existing film formation process (SiH4+N2O), the H element in silane can easily enter the IGZO film layer, thereby affecting the device perform...

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Problems solved by technology

[0004] The present application provides an array substrate and a preparation method thereof, which can solve the problems of high energy consumption and high cost when preparing a passivation layer on the substrate substrate of the existing IGZO TFT, and the problem that H element easily enters the IGZO film layer and affects the performance of the device.

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