Structure of electronically controlled magneton valve based on bulk acoustic wave excitation

Abstract

The invention belongs to the field of memory, and discloses an electronically controlled magneton valve structure based on bulk acoustic wave excitation, including a thin film bulk acoustic wave resonator substructure and a magneton valve substructure located on a substrate (1) from top to bottom and ferroelectric exchange bias heterojunction substructure; thin film bulk acoustic wave resonator substructure is used to provide bulk acoustic wave excitation to magnetic valve substructure; use thin film bulk acoustic wave resonator substructure to regulate the generated bulk acoustic wave Resonant frequency and amplitude, realize ferromagnetic resonance to excite the magnitude of the magneton flow in the magneton substructure, so as to realize the conduction and cut-off of the magneton substructure, and realize the magneton valve effect of the magneton substructure motivation. The present invention improves the key excitation mode of the magneton valve and other substructures correspondingly arranged, so that the structure can adjust the resonant frequency and amplitude through FBAR to realize ferromagnetic resonance to excite the size of the magneton flow in the magneton valve, and realize The disconnection of the device achieves the function of storage.

Description

technical field [0001] The present invention belongs to the field of memory, and more specifically relates to an electronically controlled magneton valve structure based on bulk acoustic wave excitation. Taking advantage of the advantages of short transmission path, low loss, high operating frequency and easier resonance with spin waves when bulk acoustic waves propagate in the direction perpendicular to the device film, it is a new type of memory device structure, especially suitable for applications at room temperature. Background technique [0002] For half a century, the transistor technology that regulates the conductivity of semiconductors by an electric field has developed rapidly, verifying the Moore's Law proposed in 1965. At present, the CMOS integration process has been developed to below 5nm. Without changing the basic mode of transistor technology, only from the physical scale, Moore's Law will be unsustainable. In order to meet the development requirements of ...

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Problems solved by technology

[0005] Chinese invention patent CN 104362250B proposes an electroresistive heterojunction with exchange bias effect, which only realizes the electronically controlled exchange bias heterojunction structure, and does not form a prototype device (only through the exchange bias effect cannot The device is well formed to achieve the performance of the device, so this prior art has done research on the exchange bias but has not further studied it to form a prototype device), so it cannot reflect the overall regulation of the electric field on the device effect

And only based on the change of the resistance state caused by the exchange bias effect is limited, and the information is easily lost when used in storage

[0006] So far, most multiferroic heterostructures can only realize the regulation of the magnitude of the magnetic moment by the electric field, and the regulation of the direction of the magnetic moment often requires the assistance of a magnetic field, and most of the electrical control properties are volatile, and cannot be controlled without the assistance of a magnetic field. Technology that can realize magnetic moment rotation and magnetoresistance change in spintronic devices controlled by electric field non-volatility

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