A vertical structure of mgzno/zno solar-blind detector
A detector and hexagonal phase technology, applied in the field of solar-blind detectors, which can solve problems such as limiting the detection performance of solar-blind detectors
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[0024] A third aspect of the present invention provides a method for preparing the vertical detection device, including the steps of substrate pretreatment, substrate preheating, deposition, cooling, photolithography, evaporation, and photoresist removal; preferably, the The preparation method of the vertical detection device includes the steps of substrate pretreatment, substrate preheating, deposition, cooling, photolithography, evaporation and photoresist removal.
[0025] In one embodiment, the substrate pretreatment process is to sequentially clean the ZnO substrate with acetone, ethanol and deionized water, and then perform surface treatment under oxygen plasma; preferably, the substrate pretreatment process is to clean the ZnO substrate with The bottom is sequentially cleaned with acetone, ethanol and deionized water for 5 to 15 minutes, and then subjected to surface treatment under oxygen plasma for 10 to 30 seconds; more preferably, the substrate pretreatment process i...
Embodiment 1
[0038] Embodiment 1 of the present invention provides a vertical detection device, which uses a ZnO single crystal substrate as an electrode material, and further includes a Ti / Au electrode, the thickness of the Ti electrode is 20 nm, and the thickness of the Au electrode is 100 nm;
[0039] The preparation method of the vertical detection device comprises the steps of substrate pretreatment, substrate preheating, and using Mg 0.3 Zn 0.7 O deposition, cooling, photolithography, evaporation and the steps of removing photoresist with acetone;
[0040] The substrate pretreatment process is to sequentially clean the ZnO substrate with acetone, ethanol and deionized water for 10 min, and then perform surface treatment under oxygen plasma for 20 s;
[0041] The substrate preheating process is: 5.0×10 in the deposition chamber -8 Under the Torr vacuum degree, the temperature is gradually increased to 700 °C until the vacuum degree of the deposition chamber returns to 10 -6 Torr or...
Embodiment 2
[0046] Embodiment 2 of the present invention provides a vertical detection device, which uses a ZnO single crystal substrate as an electrode material, and further includes a Ti / Au electrode, the thickness of the Ti electrode is 25 nm, and the thickness of the Au electrode is 110 nm;
[0047] The preparation method of the vertical detection device comprises the steps of substrate pretreatment, substrate preheating, and using Mg 0.3 Zn 0.7 O deposition, cooling, photolithography, evaporation and the steps of removing photoresist with acetone;
[0048] The substrate pretreatment process is to sequentially clean the ZnO substrate with acetone, ethanol and deionized water for 15 min, and then perform surface treatment under oxygen plasma for 30 s;
[0049] The preheating process of the substrate is: 5.5×10 in the deposition chamber -8 Under the Torr vacuum degree, the temperature is gradually increased to 800 °C until the vacuum degree of the deposition chamber returns to 10 -6 ...
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