Ultraviolet LEDs and methods of making the same
An ultraviolet and substrate technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems affecting the sterilization application of ultraviolet LEDs, the external quantum efficiency is less than 2%, and the luminous efficiency is low, so as to improve the electron-hole recombination. efficiency, improving internal quantum efficiency and luminous efficiency, and increasing hole concentration
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Embodiment 1
[0080] This embodiment provides a kind of ultraviolet LED, and its structural diagram is as follows figure 2 As shown, it specifically includes the substrate and the buffer layer, non-doped AlN layer, non-doped Al t Ga 1-t N-layer, N-type Al w Ga 1-w N layer, Al x Ga 1-x N / Al y Ga 1-y N multi-quantum well layer, electron blocking layer and hole injection layer;
[0081] Wherein, the hole injection layer includes at least one sub-layer, and from the upward direction of the substrate, each sub-layer includes p-type Al v Ga 1-v N layer and P-type GaN layer;
[0082] 0
[0083] The UV LED is prepared by MOCVD technology, and the specific process steps are as follows:
[0084] 1. Raise the temperature in the reaction chamber to 900°C, control the pressure at 400mbar, and simultaneously pass trimethylaluminum (150mL / min) and ammonia gas into the reaction chamber for about 3 minutes to form a sapphire substrate with a thickness of about 25nm. ...
Embodiment 2
[0100] This embodiment provides a kind of ultraviolet LED, and its structural diagram is as follows image 3 As shown, it specifically includes the substrate and the buffer layer, non-doped AlN layer, non-doped Al t Ga 1-t N-layer, N-type Al w Ga 1-w N layer, Al x Ga 1-x N / Al y Ga 1-y N multi-quantum well layer, electron blocking layer and hole injection layer;
[0101] Wherein, the hole injection layer includes at least one sub-layer, and from the upward direction of the substrate, each sub-layer includes p-type Al u Ga 1-u N-layer, P-type Al v Ga 1-v N layer and P-type GaN layer;
[0102] 0
[0103] The UV LED is prepared by MOCVD technology, and the specific process steps are as follows:
[0104] 1. Raise the temperature in the MOCVD reaction chamber to 900°C, control the pressure at 400mbar, and feed trimethylaluminum (150ml / min) and ammonia gas into the reaction chamber for about 1.5min at the same time, forming a thickne...
Embodiment 3
[0121] This embodiment provides a kind of ultraviolet LED, and its structural diagram is as follows Figure 4 As shown, it specifically includes the substrate and the buffer layer, non-doped AlN layer, non-doped Al t Ga 1-t N-layer, N-type Al w Ga 1-w N layer, Al x Ga 1-x N / Al y Ga 1-y N multi-quantum well layer, electron blocking layer and hole injection layer;
[0122] Wherein, the hole injection layer includes at least one sub-layer, and from the upward direction of the substrate, each sub-layer includes p-type Al u Ga 1-u N-layer and P-type Al v Ga 1-v N layer;
[0123] 0
[0124] The UV LED is prepared by MOCVD epitaxial technology, and the specific process steps are as follows:
[0125] 1. Raise the temperature in the reaction chamber to 950°C, control the pressure at 400mbar, feed trimethylaluminum (150mL / min) and ammonia gas into the reaction chamber at the same time, and form AlN with a thickness of about 12.5nm on ...
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Abstract
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