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Two-dimensional InGaSe nano material grown on Si substrate and preparation method of two-dimensional InGaSe nano material

A nanomaterial and substrate technology, which is applied in the field of two-dimensional InGaSe nanomaterials and its preparation, can solve the problems of the large difference in the photoelectric properties of the InGaSe thin film, the large area uniformity of the selenization method, and the deviation of the composition from the stoichiometric ratio. Low preparation cost, low cost and good sample quality effect

Active Publication Date: 2019-10-22
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The three-step co-evaporation method can prepare high-efficiency CIGS solar cells, but it is necessary to precisely control the evaporation rates of Cu, In, Ga, and Se during the preparation, which brings difficulties to large-scale production; selenization after sputtering the metal layer The large-area uniformity of the method is good, but the toxic selenization process has brought about the problem of low yield
However, most of the liquid-phase methods are polyol solution synthesis methods, which have complex processes, cumbersome raw material pretreatment, many steps, and low efficiency; the existing methods for preparing InGaSe thin films have not been reported, and the crystallization quality is generally poor, and the composition Deviation from the stoichiometric ratio, the optoelectronic properties of InGaSe thin films obtained by different research groups vary greatly

Method used

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  • Two-dimensional InGaSe nano material grown on Si substrate and preparation method of two-dimensional InGaSe nano material
  • Two-dimensional InGaSe nano material grown on Si substrate and preparation method of two-dimensional InGaSe nano material

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Embodiment 1

[0031] The preparation method of the two-dimensional InGaSe grown on the Si substrate of this embodiment includes the following steps:

[0032] (1) Using Si as the substrate, selecting the (111) surface as the epitaxial growth surface, cleaning the substrate with absolute ethanol, and then blowing it with dry argon to make the epitaxial growth surface smooth and dust-free to obtain a cleaned substrate;

[0033] (2) Take two dry and clean crucibles (No. 1 and No. 2), in which the No. 1 crucible is placed in 0.03g Se, and the No. 2 crucible is placed in 0.03g In and 0.1g Ga;

[0034] (3) The crucible containing the raw material is sent into the CVD glass tube, wherein the crucible No. 1 is placed in the first temperature zone, the crucible No. 2 is placed in the second temperature zone, and the cleaned substrate described in step (1) is placed in the CVD glass tube. Directly above the crucible sent into the second temperature zone on the workbench, pump the glass tube to a vacuu...

Embodiment 2

[0038] The preparation method of the two-dimensional InGaSe grown on the Si substrate of this embodiment includes the following steps:

[0039] (1) Using Si as the substrate, selecting the (111) surface as the epitaxial growth surface, cleaning the substrate with absolute ethanol, and then blowing it with dry argon to make the epitaxial growth surface smooth and dust-free to obtain a cleaned substrate;

[0040] (2) Take two dry and clean crucibles (No. 1 and No. 2), in which the No. 1 crucible is placed in 0.03g Se, and the No. 2 crucible is placed in 0.04g In and 0.1g Ga;

[0041](3) The crucible containing the raw material is sent into the CVD glass tube, wherein the crucible No. 1 is placed in the first temperature zone, the crucible No. 2 is placed in the second temperature zone, and the cleaned substrate described in step (1) is placed in the CVD glass tube. Directly above the crucible sent into the second temperature zone on the workbench, pump the glass tube to a vacuum...

Embodiment 3

[0045] The preparation method of the two-dimensional InGaSe grown on the Si substrate of this embodiment includes the following steps:

[0046] (1) Using Si as the substrate, selecting the (111) surface as the epitaxial growth surface, cleaning the substrate with absolute ethanol, and then blowing it with dry argon to make the epitaxial growth surface smooth and dust-free to obtain a cleaned substrate;

[0047] (2) Take two dry and clean crucibles (No. 1 and No. 2), in which the No. 1 crucible is placed in 0.03g Se, and the No. 2 crucible is placed in 0.02g In and 0.1g Ga;

[0048] (3) The crucible containing the raw material is sent into the CVD glass tube, wherein the crucible No. 1 is placed in the first temperature zone, the crucible No. 2 is placed in the second temperature zone, and the cleaned substrate described in step (1) is placed in the CVD glass tube. Directly above the crucible sent into the second temperature zone on the workbench, pump the glass tube to a vacuu...

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Abstract

The invention discloses a two-dimensional InGaSe nano material grown on a Si substrate and a preparation method of the two-dimensional InGaSe nano material. The preparation method comprises the following steps: cleaning a substrate with ethanol, and blowing the substrate with dry argon to obtain a cleaned substrate; putting the cleaned substrate into a glass tube of a CVD device, putting Se powder, In particles and Ga particles into the glass tube of the CVD device, vacuumizing, and introducing argon as shielding gas; and heating to enable Se, In and Ga to grow on an epitaxial growth surface at a constant temperature so as to obtain the InGaSe nano material grown on the Si substrate. The preparation method provided by the invention has the advantages of simple growth process, good crystallization quality, low cost, high feasibility and the like. Through the preparation method provided by the invention, the InGaSe two-dimensional material which is provided with a forbidden band that iscontinuously adjustable in the range from 1.02-1.67eV and can be used for manufacturing optical detectors, solar cells and the like is grown.

Description

technical field [0001] The invention relates to the field of two-dimensional InGaSe nanometer material growth, in particular to a two-dimensional InGaSe nanometer material grown on a Si substrate and a preparation method thereof. Background technique [0002] Academia and industry generally believe that the development of solar cells has entered the third generation. The first generation is monocrystalline silicon solar cells; the second generation is polycrystalline silicon, amorphous silicon and other solar cells; copper indium gallium selenide thin film solar cells have the remarkable characteristics of low production cost, low pollution, no decay, good low light performance, etc. The efficiency ranks first among various thin-film solar cells, close to crystalline silicon solar cells, and the cost is only one-third of its cost. Since copper indium gallium selenide thin-film solar cells have sensitive element ratios and complex multi-layer structures, their process and pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02C23C16/30
CPCC23C16/30H01L21/02381H01L21/02568H01L21/0262
Inventor 王文樑李国强陈德润谢欣灵赖书浩
Owner SOUTH CHINA UNIV OF TECH