Plasma corrosion-resistant aluminum oxide coating hole sealing method

An aluminum oxide coating and plasma-resistant technology, which is applied in the coating, metal material coating process, fusion spraying, etc., can solve the problem of increased damage to the inner wall of the etching process chamber, peeling off of the coating and the substrate, and easy generation of particles and other problems, to achieve the effect of reducing the plasma corrosion rate

Active Publication Date: 2019-10-25
CHONGQING GENORI IND CO LTD
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AI Technical Summary

Problems solved by technology

However, with the increase of the wafer size, the inner diameter of the plasma etching process chamber has increased from 400mm to 500-600mm, the corresponding plasma power has also increased, and the damage to the inner wall of the etching process chamber has also increased. Aluminum phosphate sealed Al 2 o 3 During the etching process of the coating, it is easy to produce particles, the coating and the substrate fall off, and the Al 2 o 3 Parts cannot withstand high power (higher than 200W) plasma erosion and other problems

Method used

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Examples

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Effect test

Embodiment 1

[0034] Embodiment 1, a kind of plasma corrosion-resistant aluminum oxide coating sealing method is carried out according to the following steps: 1g of aluminum nitrate nonahydrate, 10g of pseudoboehmite and 100g of water are packed in a polytetrafluoroethylene ball mill tank, Add 50 g of 99.5% alumina grinding balls with a size of 5 mm, mix for 30 minutes with a rotating speed of 400 rpm in a planetary ball mill, then leave the uniformly mixed slurry for 24 hours, get the supernatant liquid into the storage tank of the ultrasonic sprayer In the liquid tank, then spray 80 seconds on the alumina coating prepared by plasma spraying (prepared by the method of Comparative Example 1), and then place it in the air for 24 hours; put it into a multimode microwave high-temperature furnace and heat it to 1200 ℃ for 30 minutes Minutes, cool down to room temperature with the furnace. It is measured that the porosity after sealing is 1.8%, and the plasma etching rate is 0.24 μm / h.

Embodiment 2

[0035] Embodiment 2, a kind of plasma corrosion-resistant aluminum oxide coating sealing method is carried out according to the following steps: 2 g of aluminum nitrate nonahydrate, 15 g of pseudo-boehmite and 100 g of water are packed into a polytetrafluoroethylene ball mill tank, Add 75g of 99.5% aluminum oxide grinding balls with a size of 5mm, mix in a planetary ball mill with a rotating speed of 400 rpm for 30 minutes, then leave the uniformly mixed slurry for 32 hours, get the supernatant liquid into the storage tank of the ultrasonic sprayer In the liquid tank, spray 60 seconds on the aluminum oxide coating (prepared according to the method of comparative example 1) that adopts plasma spraying to prepare subsequently, then place in air for 24 hours; Put into the multimode microwave high-temperature oven and heat to 1200 ℃ of insulation 45 Minutes, cool down to room temperature with the furnace. It is measured that the porosity after sealing is 1.7%, and the plasma etchi...

Embodiment 3

[0036]Embodiment 3, a kind of plasma corrosion-resistant aluminum oxide coating sealing method is carried out according to the following steps: put 2.5g of aluminum nitrate nonahydrate, 25g of pseudo-boehmite and 100g of water into a polytetrafluoroethylene ball mill tank , add 125g of 99.5% aluminum oxide grinding balls with a size of 5mm, mix in a planetary ball mill with a speed of 400 rpm for 30 minutes, then leave the uniformly mixed slurry for 36 hours, take the supernatant and load it into the ultrasonic sprayer In the liquid storage tank, spray on the aluminum oxide coating prepared by plasma spraying (prepared according to the method of Comparative Example 1) for 40 seconds, and then place it in the air for 24 hours; put it into a multi-mode microwave high-temperature furnace and heat it to 1200 ° C for insulation After 75 minutes, cool to room temperature with the furnace. It is measured that the porosity after sealing is 1.8%, and the plasma etching rate is 0.23 μm / ...

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Abstract

The invention discloses a plasma corrosion-resistant aluminum oxide coating hole sealing method. After aluminum nitrate nonahydrate, pseudoboehmite and water are uniformly ground at a weight ratio of(0.5-3): (10-30): 100, standing is performed, and supernatant is taken, and is sprayed onto an aluminum oxide coating; and standing is performed again after spraying, heating and heat preserving are performed, and then hole sealing is completed. According to the hole sealing method, due to changing of the composition of a hole sealing material and improvement of a hole sealing treatment method, the aluminum oxide coating porosity is smaller than 2% after hole sealing; and compared with traditional phosphate hole sealing, the plasma corrosion rate is also lowered by 113% or so, and the performance is improved remarkably.

Description

technical field [0001] The invention relates to the technical field of preparation of ceramic coating materials, in particular to a plasma corrosion-resistant alumina coating sealing method. Background technique [0002] Plasma etching is an etching technology widely used in the micro-nano-scale semiconductor device manufacturing process and microelectronics manufacturing process. Plasma etching refers to the use of glow discharge to generate plasma containing charged particles such as plasma and electrons, as well as highly chemically active neutral atoms, molecules and free radicals. These active particles diffuse to the part to be etched and are etched. The material reacts to form volatile products and be removed, thereby completing the pattern transfer etching technology, which is an irreplaceable technology for realizing the high-fidelity transfer of fine patterns in VLSI production from lithography templates to wafers process. [0003] During plasma etching, the reac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C4/18C23C4/134C23C4/11
CPCC23C4/18C23C4/11C23C4/134
Inventor 杨佐东
Owner CHONGQING GENORI IND CO LTD
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