Ultraviolet LED epitaxial wafer and preparation method thereof

Abstract

The invention discloses an ultraviolet LED epitaxial wafer, which comprises a glass substrate, and a metal layer, a polycrystalline AlN layer, a single crystal AlN layer, an undoped AlGaN layer, an n-type doped AlGaN layer, a multi-quantum well layer, an AlGaN electron blocking layer, a p-type doped AlGaN layer, and a p-type doped GaN layer sequentially growing on the glass substrate. The invention also discloses an ultraviolet LED epitaxial wafer preparation method. Based on the characteristics of each layer, an electroplating method, a magnetron sputtering method, a physical vapor depositionmethod and a molecular beam epitaxial growth technology are combined. The GaN material with less defects and high quality can grow, the substrate is easy to remove, heat conduction and electrical conductivity are good, and the light emitting performance is high. The production process is simple, the cost is low, the reproducibility is achieved, and large-scale production application can be realized.

Description

technical field [0001] The invention relates to an LED epitaxial wafer and a preparation method thereof, in particular to an ultraviolet LED epitaxial wafer grown on a glass substrate and a preparation method thereof. Background technique [0002] GaN-based ultraviolet LED epitaxial materials and devices, as the key to the third-generation semiconductor materials and devices, can be applied to sterilization, medical equipment and other fields, and have developed extremely rapidly in recent years. [0003] At present, high-quality GaN materials are generally produced by heteroepitaxial methods. Since different substrates will directly affect the lattice quality of the grown epitaxial layer, the choice of substrate is very important. Generally, the selection of substrates needs to follow the following principles, such as lattice constant matching, thermal expansion coefficient matching, reasonable price, etc. In addition, the selection of different substrates will cause differ...

AI Technical Summary

Problems solved by technology

At present, the growth of GaN on ordinary glass substrates and the preparation of LEDs are both feasible. However, due to the characteristics of glass materials, it is still necessary to overcome the lattice mismatch, Major defects such as thermal mismatch, crystal dislocation, and stacking fault severely limit the large-scale application of glass materials in LED commercial production

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