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Sulfur and nitrogen double-doped graphene wave-absorbing material, production method and wave-absorbing performance adjusting method

A wave-absorbing material and double-doping technology, applied in the fields of graphene, chemical instruments and methods, inorganic chemistry, etc., can solve the problems of inability to achieve full-band adjustable absorption, low wave absorption performance, and difficult film forming of products. , to achieve the effect of facilitating industrialized large-scale production, excellent wave absorption properties, and excellent wave absorption properties

Pending Publication Date: 2019-11-15
LANZHOU UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, a common problem in these studies is that a graphene-based material is optimized to only have a strong absorption capacity for a specific frequency band of electromagnetic waves
However, it needs to be realized by freeze-drying technology, the equipment is expensive, and it cannot be mass-produced; and the product is difficult to form into a film, which is not conducive to application and promotion
[0005] It has been reported in the literature that the energy bandgap, electronic density of states, and interface properties of graphene can be adjusted by doping heteroatoms such as N and F, so as to achieve the purpose of absorbing waves, but the absorbing performance is not high and the full band cannot be adjusted. absorb
[0006] It has been reported in the literature that S-doped graphene is prepared by high-temperature annealing to achieve electromagnetic shielding, but it does not have microwave-absorbing properties.
However, the chemical wet S-doped graphene has not been used for the preparation of absorbing materials.

Method used

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  • Sulfur and nitrogen double-doped graphene wave-absorbing material, production method and wave-absorbing performance adjusting method
  • Sulfur and nitrogen double-doped graphene wave-absorbing material, production method and wave-absorbing performance adjusting method
  • Sulfur and nitrogen double-doped graphene wave-absorbing material, production method and wave-absorbing performance adjusting method

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Effect test

Embodiment 1

[0036] In this embodiment, the preparation of sulfur and nitrogen double-doped graphene and the control scheme of absorbing properties are carried out as follows:

[0037] Preparation of sulfur-nitrogen double-doped graphene wave-absorbing material: Take 5-10mmol of reducing agent containing sulfur and nitrogen elements, add 10-300mL of 1-2mg / mL graphite oxide solution, heat to 80-100 o C. Continue the constant heat reaction for 1-3h. After the reaction is over, cool to room temperature, wash and filter with a large amount of deionized water 6-10 times, freeze-dry for 24-48h, and obtain black sulfur-doped graphene powder with a conductivity of 1.86 Scm -1 . Composite with 30-70% paraffin, when the thickness is 2.0mm, it absorbs at 10.85GHz, and the lowest reflection loss is -23.4dB; when the thickness is 1.5mm, it absorbs at 14.90GHz, and the lowest reflection loss is -23.3dB; see figure 1 .

Embodiment 2

[0039] In this embodiment, the preparation of sulfur and nitrogen double-doped graphene and the control scheme of absorbing properties are carried out as follows:

[0040] Preparation of sulfur-nitrogen double-doped graphene wave-absorbing material: Take 10-20mmol of reducing agent containing sulfur and nitrogen elements, add 10-300mL of 1-2mg / mL graphite oxide solution, heat to 80-100℃, and keep constant heat React for 1-3 hours. After the reaction is over, cool to room temperature, wash and filter with a large amount of deionized water 6-10 times, and freeze-dry for 24-48 hours to obtain black sulfur-nitrogen double-doped graphene powder with a conductivity of 2.41Scm -1 . Composite with 30-70% paraffin, absorb at 12.35GHz when the thickness is 1.5mm, the lowest reflection loss is -12.02dB, see figure 2 .

Embodiment 3

[0042] In this embodiment, the preparation of sulfur and nitrogen double-doped graphene and the control scheme of absorbing properties are carried out as follows:

[0043]Preparation of sulfur-nitrogen double-doped graphene wave-absorbing material: Take 20-30mmol of reducing agent containing sulfur and nitrogen elements, add 10-300mL of 1-2mg / mL graphite oxide solution, heat to 80-100°C, and continue to heat React for 1-3h. After the reaction is over, cool to room temperature, wash and filter with a large amount of deionized water 6-10 times, and freeze-dry for 24-48h to obtain black sulfur-doped graphene powder with a conductivity of 3.77Scm -1 . Composite with 30-70% paraffin, absorb at 4.79GHz when the thickness is 5.0mm, the lowest reflection loss is -16.3dB, see image 3 .

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Abstract

The invention relates to the field of production of wave-absorbing materials, in particular to a sulfur and nitrogen double-doped graphene wave-absorbing material, a production method and a wave-absorbing performance adjusting method. The production method of the wave-absorbing material comprises the steps of (1) producing graphite oxide by means of a hummers method, and producing a graphite oxidesolution; and (2) taking a reducing agent containing sulfur and nitrogen, adding the produced graphite oxide solution, conducting heating to elevate temperature to 80-100 DEG C, carrying out a constant temperature reaction continuously for 1-3 h, after the reaction is completed, conducting cooling to reduce the temperature to room temperature, conducting washing filtering by means of deionized water, and conducting freeze drying to obtain the black sulfur and nitrogen double-doped graphene powder. Compared with other heteroatom-doped graphene materials and most graphene composite materials, the produced sulfur and nitrogen double-doped graphene wave-absorbing material has higher wave-absorbing characteristics and an adjustable wave band; and by producing the sulfur and nitrogen double-doped graphene wave-absorbing material through a chemical wet method, the reaction condition changes from high-temperature annealing to a low-temperature reaction, and not only is energy consumption greatly reduced, but also production of a liquid-phase material which is liable to be processed into a film is achieved, so that industrial large-scale production is facilitated.

Description

technical field [0001] The invention relates to the field of preparation of wave-absorbing materials, in particular to a sulfur-nitrogen double-doped graphene wave-absorbing material and a method for preparing and adjusting wave-absorbing performance. Background technique [0002] Under the current trend of electromagnetic wave absorbing materials gradually developing towards high performance, light weight, and flexibility, high electrical conductivity, excellent mechanical properties, and ultra-high specific surface area make graphene a very promising electromagnetic wave absorbing filling material. At present, there are three methods to construct graphene-based wave-absorbing materials. One is to effectively improve the electromagnetic wave absorption performance by combining graphene with magnetic ferrite, conductive polymers, sulfur-oxygen compounds and other materials. The second is to construct a graphene 3D porous framework, so that the electromagnetic waves entering ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/184
CPCC01B32/184C01B2204/22
Inventor 李潇阳谭琳冯辉霞朱孟辉陈娜丽赵丹孙文强徐阳
Owner LANZHOU UNIVERSITY OF TECHNOLOGY
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