Multi-channel total-silicon-based infrared thermoelectric detector and manufacturing method thereof

Abstract

The invention belongs to the technical field of photoelectric detection, and particularly relates to a multi-channel total-silicon-based infrared thermoelectric detector and a manufacturing method thereof. The detector structure comprises an SOI substrate of which the top layer is n-type doped; a silicon nanowire array which is distributed in parallel and is prepared on the silicon oxide layer ofthe SOI substrate and in the top silicon; a two-dimensional metasurface constructed and integrated in the silicon nanowire array, wherein the metasurface is composed of a nanoscale metal antenna; a top contact electrode covering the two ends of the silicon nanowire array. The detection wave band of the detector is not limited by direct or indirect transition between semiconductor material bands ofa traditional detector, and the whole 1-3 [mu]m wave band can be covered. The problem that an total-silicon material cannot work in the infrared band with the wavelength larger than 1.1 microns is solved, complete compatibility and integration with a silicon-based CCD device or a CMOS reading circuit are achieved, the total-silicon material can be developed into an infrared photoelectric chip ofa multi-channel, high-resolution and a large-area focal plane pixel array, and the total-silicon material has wide application prospects.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection, and in particular relates to an all-silicon-based infrared photodetector and a manufacturing method thereof. Background technique [0002] The materials currently used in near-infrared photodetection (1-3μm) are almost all dominated by III-V / II-VI materials, such as: InGaAs, HgCdTe, InSb, etc. However, these materials have the following defects: high material cost, high toxicity, causing environmental pollution, extremely complex and unstable material growth and device preparation process, low yield of the prepared device, must work at low temperature, limited by the diameter of the single crystal material ingot It is impossible to achieve a large area (currently the maximum area of ​​GaAs is 6 inches), and it is not compatible with traditional silicon-based CMOS processes and readout circuit chips. On the other hand, the current development trend of infrared focal plane imaging ...

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Problems solved by technology

[0005] The purpose of the present invention is to propose a multi-channel all-silicon-based infrared photodetector structure and its manufacturing method to solve the problem that silicon materials cannot work due to the band gap limitation and the wave band greater than 1.1 μm, and overcome the responsivity of current silicon-based thermal electron infrared devices , low quantum efficiency and detection rate, and high dark current defects, to achieve high-sensitivity infrared monitoring capabilities of all-silicon photodetectors

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