Boron-doped diamond supported metal single atom and preparation method and application thereof

A metal-loaded, boron-doped technology, used in chemical instruments and methods, catalyst activation/preparation, metal/metal oxide/metal hydroxide catalysts, etc., can solve the problem of poor stability and low catalytic activity of electrocatalytic reaction electrode materials and other problems, to achieve the effect of large atom utilization efficiency, high catalytic activity, and wide electrochemical window.

Active Publication Date: 2019-12-13
SHENZHEN INST OF ADVANCED TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a boron-doped diamond-supported metal single atom and its preparation method and application, aiming to solve the problems of poor stability and low catalytic activity of electrocatalytic reaction electrode materials

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  • Boron-doped diamond supported metal single atom and preparation method and application thereof
  • Boron-doped diamond supported metal single atom and preparation method and application thereof
  • Boron-doped diamond supported metal single atom and preparation method and application thereof

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preparation example Construction

[0030] Correspondingly, the embodiment of the present invention also provides a method for preparing boron-doped diamond-supported metal single atoms. The method comprises the steps of:

[0031] S01. Provide a boron-doped diamond carrier, the boron-doped diamond carrier includes a substrate, and a boron-doped diamond film arranged on one or both sides of the substrate;

[0032] S02. Provide a metal salt solution, use the boron-doped diamond carrier as a working electrode, a Pt electrode as a counter electrode, a saturated silver / silver chloride electrode as a reference electrode, and the metal salt solution as an electroplating solution, using a three-electrode system Electrochemical deposition is carried out under magnetic stirring, and metal single atoms are deposited on the boron-doped diamond film; and then annealing is used to disperse the metal atoms deposited on the boron-doped diamond film to obtain the boron Doped diamond supported metal single atoms.

[0033] Speci...

Embodiment 1

[0062] A method for preparing boron-doped diamond-supported metal bismuth single atoms is as follows:

[0063] Step 1: providing a boron-doped diamond carrier, the boron-doped diamond carrier includes a substrate, and a boron-doped diamond film disposed on one or both sides of the substrate;

[0064] First, provide a titanium mesh substrate, and pretreat the substrate: put the titanium mesh substrate in a beaker, add 50 mL of acetone solution to soak, and sonicate for 10 minutes; then replace the acetone solution with ethanol solution, soak and sonicate for 10 minutes; The impurities on the surface of the titanium mesh are removed through two ultrasonic steps, and at the same time, certain defects are formed on the surface to form planting sites. Then the titanium mesh was taken out and placed in deionized water for ultrasonic cleaning for 10 min. Place the cleaned titanium mesh in the suspension of nano-diamond powder for 1 h, and implant diamond crystal seeds on the surface...

Embodiment 2

[0069] Boron-doped diamond-supported metal bismuth single atoms are used as electrodes for electrocatalytic nitrogen reduction reaction as follows:

[0070] A closed H-type double-cell reactor is adopted, and the anode chamber and the cathode chamber are separated by a proton exchange membrane. A three-cell system was adopted, and the prepared metal bismuth-supported boron-doped diamond was used as the working electrode, the graphite rod was used as the counter electrode, and Ag / AgCl was used as the reference electrode. The distance between the working electrode and the counter electrode was 2 cm, and the reference electrode was close to the working electrode. Add saturated 0.1M Na to the cathode chamber 2 SO 4 solution, add an equal volume of 0.1M Na to the anode compartment 2 SO 4 solution. Electrocatalytic reduction of N 2 It is carried out at a constant voltage of -1.5V to -1.0V, and then the electrocatalytic reduction performance is tested, and finally the amount of ...

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Abstract

The invention provides a boron-doped diamond supported metal single atom. The boron-doped diamond supported metal single atom comprises a substrate, a boron-doped diamond thin film arranged on one ortwo sides of the substrate, and a catalyst uniformly supported on the surface of the boron-doped diamond thin film, wherein the catalyst comprises a metal single atom. A prepared electrode of the boron-doped diamond supported metal single atom has a wide electrochemical window, high stability, and high catalytic activity and product selectivity, so that selectivity and efficiency of a catalytic process are greatly improved.

Description

technical field [0001] The invention relates to the field of catalytic electrodes, in particular to a boron-doped diamond-supported metal single atom and a preparation method and application thereof. Background technique [0002] With the continuous increase of the global population, the depletion of fossil fuels and the increasingly serious global environmental problems, it is imminent to explore new fuels that can replace traditional fossil fuels and reduce environmental burdens while achieving sustainable energy utilization. Ammonia is mainly used in the production of chemical fertilizers in chemical processes, which plays an important role in solving the global food problem. At the same time, it is also a green energy carrier and a potential energy transmission fuel. [0003] The main role of nitrogen reduction to produce ammonia is in chemical production. Synthetic ammonia is of great significance to the growth of crops and to solving the global food problem. At presen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/18B01J37/34C25B11/06
CPCB01J23/18B01J35/0033B01J35/0093B01J37/348C25B11/091
Inventor 杨扬唐永炳徐梦琦胡渊张文军
Owner SHENZHEN INST OF ADVANCED TECH
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