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A kind of processing method of conductive metal oxide

A technology of conductive metal and processing method, applied in circuits, electrical components, semiconductor/solid-state device manufacturing, etc., can solve problems such as Al corrosion, indium tin oxide film corrosion, abnormal pattern definition, etc., to achieve complete morphology and avoid corrosion. Effect

Active Publication Date: 2022-08-02
SHANGHAI IND U TECH RES INST
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0004] After Indium Tin Oxide (ITO) and Al are etched, if traditional H 2 O and O 2 Plasma removal photoresist method, H 2 O plasma can cause indium tin oxide (ITO) film corrosion, resulting in abnormal pattern definition
But if use O 2 Plasma removes the photoresist, and the residual Cl will cause Al corrosion

Method used

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  • A kind of processing method of conductive metal oxide
  • A kind of processing method of conductive metal oxide
  • A kind of processing method of conductive metal oxide

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Embodiment Construction

[0034] The embodiments of the present invention are described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0035] see Figure 1 to Figure 9 . It should be noted that the diagrams provided in this embodiment are only to illustrate the basic concept of the present invention in a schematic way, so the diagrams only show the components related to the present invention rather than the number, shape and the number of components in the actual implementation. For dimension drawing, the type, quantity and proportion of each component can be arbitrarily c...

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Abstract

The invention provides a processing method of conductive metal oxide. After etching a wafer, firstly adopt a heating method to remove the photoresist pattern of the wafer, the conductive metal oxide layer and the residual halogen elements and halogen elements on the surface of the metal layer. compound, which can effectively avoid the corrosion of the metal layer by halogen elements, and then use oxygen (O 2 ) plasma to remove photoresist, and the gas does not contain water vapor (H 2 O), which can effectively avoid the corrosion of conductive metal oxides by the plasma of water vapor. By adopting the processing method of the present invention, while the photoresist pattern is completely removed, a stacked structure of conductive metal oxide layer-metal layer with complete morphology can be obtained.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and in particular relates to a processing method of a conductive metal oxide. Background technique [0002] Indium tin oxide (ITO), as a nano-indium tin metal oxide, has good conductivity and transparency, and can cut off electronic radiation, ultraviolet rays and far infrared rays that are harmful to the human body. Therefore, indium tin oxide (ITO) is usually sprayed on glass, plastic, metal and electronic display screens as a transparent conductive film, while reducing harmful electronic radiation, ultraviolet radiation and infrared radiation. [0003] When making OLED substrates, it is usually necessary to match indium tin oxide (ITO) and metal Al. In order to form patterned indium tin oxide (ITO) and metal Al, it is necessary to use a mask on indium tin oxide (ITO) and metal Al The pattern is defined by photolithography, and then dry etching is performed on indium tin oxide (ITO) ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/02697H01L21/02518
Inventor 黄志刚
Owner SHANGHAI IND U TECH RES INST