Unlock instant, AI-driven research and patent intelligence for your innovation.

A Silicon Carbide Crystal Growth Method with Low Basal Plane Dislocation Density

A technology of basal plane dislocation and crystal growth, applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as reducing control, and achieve the effect of avoiding temperature regulation

Active Publication Date: 2020-09-18
BEIJING TIANKE HEDA SEMICON CO LTD +2
View PDF12 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] However, there is no mention of how to reduce BPD and how to convert BPD to TED in order to reduce control in the industrial production of SiC single crystals

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Silicon Carbide Crystal Growth Method with Low Basal Plane Dislocation Density
  • A Silicon Carbide Crystal Growth Method with Low Basal Plane Dislocation Density
  • A Silicon Carbide Crystal Growth Method with Low Basal Plane Dislocation Density

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] A piece of 4H-SiC seed crystal with an angle of 4° is used, and the C plane is used as the crystal growth plane, and it is bonded to the lid of the graphite crucible. Fill the bottom of the crucible with sufficient SiC powder raw materials, then place the crucible cover with the seed crystal on the upper part of the crucible, and put it into the single crystal growth furnace after assembly. Vacuumize the single crystal furnace until the pressure is less than 10Pa, and carry out the following processes in sequence: (1) Inflate the growth furnace with the mixed gas of argon and nitrogen until the pressure reaches 30kPa, keep the pressure constant, and use medium frequency induction heating to carry out Raise the temperature, set the temperature at the raw material at 2200-2300°C, and set the temperature at the seed crystal at 150°C lower than the raw material temperature. After reaching the temperature, keep it warm for 3 hours, and then keep the temperature in the furnace...

Embodiment 2

[0039] A piece of 4H-SiC seed crystal with an angle of 8° is bonded to the graphite crucible cover with the C plane as the crystal growth plane. The bottom of the crucible is filled with sufficient vanadium-doped SiC powder raw materials, and then the crucible cover with the seed crystal stuck on the upper part of the crucible is put into the single crystal growth furnace after assembly. Vacuumize the single crystal furnace until the pressure is less than 10Pa, and carry out the following processes in sequence: (1) Inflate the growth furnace with the mixed gas of argon and nitrogen until the pressure reaches 30kPa, keep the pressure constant, and use medium frequency induction heating to carry out Raise the temperature, set the temperature of the raw material at 2200-2300°C, the temperature of the seed crystal is 150°C lower than the raw material temperature, keep the temperature for 5 hours after reaching the temperature, and then keep the temperature in the furnace unchanged;...

Embodiment 3

[0041] A piece of 4H-SiC seed crystal with an angle of 4° is bonded to the graphite crucible cover with the C plane as the crystal growth plane. Fill the bottom of the crucible with sufficient SiC powder raw materials, then place the crucible cover with the seed crystal on the upper part of the crucible, and put it into the single crystal growth furnace after assembly. Vacuumize the single crystal furnace until the pressure is less than 10Pa, and carry out the following processes in sequence: (1) Inflate the growth furnace with a mixture of argon and nitrogen until the pressure reaches 50kPa, keep the pressure constant, and use medium frequency induction heating to carry out Raise the temperature, set the temperature of the raw material at 2200-2300°C, the temperature of the seed crystal is 150°C lower than the raw material temperature, keep the temperature for 5 hours after reaching the temperature, and then keep the temperature in the furnace unchanged; (2) Through the pressu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a growth method of a silicon carbide crystal with a low base plane dislocation density. The silicon carbide crystal growth method includes the steps that a crucible containinga silicon carbide raw material and a seed crystal are placed in a single crystal growth furnace, the silicon carbide raw material is sublimated and crystallized on the seed crystal under specific temperature and pressure conditions, and the crystal is cooled to obtain a silicon carbide single crystal. The growth method has the advantages that during growth, under the condition that the temperatureis kept at the high temperature, initiation and interruption of the SiC crystal growth process are regulated and controlled by controlling the pressure in a growth chamber, thus the silicon carbide crystal grows first, then interrupts to grow and then lengthens slowly, and thus base plane dislocation is prompted to be converted to edge dislocation when lengthening after interruption, so that thesilicon carbide crystal with the low base plane dislocation density is obtained.

Description

technical field [0001] The invention relates to a silicon carbide crystal growth method with low basal plane dislocation density, which can significantly reduce the basal plane dislocation in the silicon carbide crystal, and relates to the field of silicon carbide crystal growth. Background technique [0002] Silicon carbide is a semiconductor material with a wide band gap. Due to its wide bandgap, high critical breakdown electric field, high thermal conductivity, and high carrier drift velocity, it can be used in high temperature, high frequency, high power, optoelectronics, and radiation resistance. It has great application prospects. [0003] The most effective method in the growth method of silicon carbide single crystal is the improved Lely method, also known as the physical vapor transport method. Now, SiC single crystal wafers of 50-200 mm can be cut from SiC single crystals prepared by the improved Lely method, and are provided for the production of electronic devic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/36C30B23/00
CPCC30B23/002C30B29/36
Inventor 刘春俊雍庆彭同华赵宁王波杨建
Owner BEIJING TIANKE HEDA SEMICON CO LTD