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Heat dissipation components and igbt modules

A heat dissipation element and module technology, which is applied in the direction of electrical components, semiconductor devices, electric solid devices, etc., can solve the problems of limiting the efficiency of cooling liquid contact heat dissipation, large mold friction, and high mold cost, so as to improve heat dissipation performance and thermal expansion. Appropriate coefficient and the effect of improving binding force

Active Publication Date: 2021-11-12
BYD CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the thermal conductivity of the currently prepared AlSiC with high thermal conductivity is 200W / (m·K), which is far behind the thermal conductivity of copper of 380W(m·K), and the heat dissipation pin of the AlSiC base plate is Al (aluminum). Material, heat conduction is only 150W / (m·K), which further limits the efficiency of heat dissipation in contact with coolant
At the same time, in the production process of the existing AlSiC heat dissipation base plate, the Al Pin pin is directly cast and formed through the mold. When the Pin pin is demolded, the mold suffers from large friction force, which is easy to be damaged, and the cost of the mold is relatively high.

Method used

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  • Heat dissipation components and igbt modules
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  • Heat dissipation components and igbt modules

Examples

Experimental program
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Effect test

Embodiment 1

[0065] This embodiment is used to illustrate the heat dissipation element of the present disclosure and its preparation method. The structure of the heat dissipation element is as follows figure 1 Shown, its preparation method comprises the steps:

[0066] 1. Air pressure casting and infiltration forming AlSiC board: use air pressure infiltration chamber equipment to preheat the SiC substrate to 500-700 °C, pour aluminum in turn, vacuumize (remove gas, prevent product from producing pores), and fill with nitrogen Pressurize (4 ~ 10MPa, to promote the aluminum liquid to fill the mold evenly) and cool down to obtain an AlSiC plate;

[0067] 2. Nickel-plate the surface of the AlSiC plate, and the thickness of the nickel layer is 12 μm;

[0068] 3. Cold-spray copper on the first main surface of the nickel-plated AlSiC plate to form the first copper-spray layer, with a thickness of 100 μm;

[0069] 4. Surface cleaning of heat dissipation column: Metal copper heat dissipation colu...

Embodiment 2~5

[0073] Using the method and materials of Example 1, the difference is that Al 2 o 3 The thickness of the copper layers on both sides of the DBC is different from that of Example 1, see Table 2 for details.

Embodiment 6

[0075] Using the method and materials of Example 1, the difference is that after step 1, the surface of the AlSiC plate is nickel-plated with a nickel layer thickness of 12 μm, and then the nickel-plated layer on the first main surface is removed by sandblasting pretreatment, The surface of the AlSiC plate is exposed, and copper spraying is carried out on the exposed surface of the AlSiC plate to obtain the first copper spray layer with a thickness of 100 μm. The structure of the heat dissipation element is as follows: figure 2 shown.

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Abstract

The present disclosure relates to a heat dissipation element and an IGBT module. The heat dissipation element includes a heat dissipation base plate and a copper-clad ceramic substrate. The heat dissipation base plate includes an aluminum silicon carbide plate and a heat dissipation column. At least part of the first main surface is covered with a first sprayed copper layer. The heat dissipation column is welded on the surface of the first sprayed copper layer to dissipate heat. The column is a copper-containing heat-dissipating column; the surface of the aluminum silicon carbide plate includes a heat-dissipating column welding area located on the first main surface and a non-heat-dissipating column welding area outside the welding area, and at least the non-heat-dissipating column welding area is covered with a first metal nickel layer , the welding area of ​​the heat dissipation column is covered or not covered with a first metal nickel layer; the copper-clad ceramic substrate includes a ceramic insulating plate, the ceramic insulating plate has a first surface and a second surface arranged oppositely, and the first surface of the ceramic insulating plate is A first copper layer and a second copper layer with different thicknesses are respectively provided on the second surface and the first copper layer, and the first copper layer is bonded and welded on the second main surface of the heat dissipation base plate. The heat dissipation element has good thermal conductivity matching, rapid heat dissipation, and high stability in package use.

Description

technical field [0001] The present disclosure relates to the field of power modules, in particular, to a heat dissipation element and an IGBT module. Background technique [0002] At present, the substrates used for high-power IGBT module packaging are mainly Cu (copper) substrates and AlSiC (aluminum silicon carbon) substrates. Compared with the Cu base plate, the linear expansion coefficient of the AlSiC base plate is more excellent in thermal matching with the ceramic circuit substrate and chip, the thermal stress is smaller, and the specific strength of AlSiC is higher, which can make the module packaging performance more stable and increase the service life. However, the thermal conductivity of the currently prepared AlSiC with high thermal conductivity is 200W / (m·K), which is far behind the thermal conductivity of copper of 380W(m·K), and the heat dissipation pin of the AlSiC base plate is Al (aluminum). The thermal conductivity of the material is only 150W / (m·K), whi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/367H01L23/373H01L23/14
CPCH01L23/14H01L23/367H01L23/3736
Inventor 宫清吴波徐强刘成臣
Owner BYD CO LTD
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