A production device and method for a large-size oxygen-free copper ingot applied to a target

An oxygen-free copper, large-size technology, applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problems of low deoxidation efficiency, insufficient copper ingot size, etc., and achieve high density, guaranteed density, Avoid cooling effects

Active Publication Date: 2021-08-10
河北冠靶科技有限公司
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The production device uses a deoxidation mechanism, a lifting mechanism and a cooling and heat preservation mechanism to solve the problems of insufficient copper ingot size, low deoxidation efficiency, and internal defects such as holes and shrinkage cavities caused by the process and crystallization method during the oxygen-free copper production process.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A production device and method for a large-size oxygen-free copper ingot applied to a target
  • A production device and method for a large-size oxygen-free copper ingot applied to a target
  • A production device and method for a large-size oxygen-free copper ingot applied to a target

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0068] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be described in detail below. Apparently, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other implementations obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0069] Such as figure 1 , 2 As shown, a schematic structural diagram of a production device for large dull oxygen-free copper ingots used for targets provided by the present invention, including a frame 1 and a melting mechanism 2, a cooling mechanism 3, and a lifting mechanism 4 arranged on the frame 1 , deoxidation mechanism 5 and temperature control mechanism 6;

[0070] The melting mechanism 2 includes a crucible assembly 21 and an intermediate frequency coil...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
pore sizeaaaaaaaaaa
heightaaaaaaaaaa
diameteraaaaaaaaaa
Login to view more

Abstract

The invention provides a production device for large-scale high-purity and high-density oxygen-free copper ingots applied to targets. The device includes a lifting mechanism. During the production process of oxygen-free copper ingots, after the raw copper is melted, the lifting mechanism can drive The intermediate frequency coil, insulation layer and air-cooling components move upward to realize the directional solidification of copper liquid from bottom to top. During the solidification process of molten copper, since the cooling mechanism is below the crucible assembly, and the air cooling assembly moves slowly and uniformly from bottom to top, the molten copper starts to solidify from the bottom of the crucible, the bottom of the crucible is solid copper, and the upper part is un The cooled liquid copper has the phenomenon that solid and liquid exist at the same time, ensuring that there is always liquid copper on the surface of solid copper or copper that is being solidified. When defects such as holes occur in the solid copper at the bottom, the copper liquid on the upper part can be replenished in time. To achieve the effect of shrinkage, reduce the internal defects of copper ingots, increase the density of copper ingots, and obtain oxygen-free copper ingots with high purity, high density, large size and small defects.

Description

technical field [0001] The invention belongs to the field of non-ferrous metal processing and new materials, and in particular relates to a production mechanism and production method of large-size, high-purity, high-density oxygen-free copper ingots applied to magnetron sputtering rotating targets. Background technique [0002] With the continuous development of the new display industry, the size and technology of display screens and touch screens have been further increased and improved. In order to meet the continuous progress and demands of the display industry, the size and sputtering power of the magnetron sputtering target are also increasing, and the requirements for the purity and microstructure of the target are getting higher and higher. Because copper has excellent electrical and thermal conductivity and excellent ductility, it is one of the key materials in the display industry. At present, in order to obtain the best electrical and thermal conductivity in the d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C22B9/05C22B15/14B22D7/12
CPCB22D7/12C22B9/05C22B15/006C23C14/3414C23C14/35
Inventor 温艳玲惠知张学智
Owner 河北冠靶科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products