Preparation method and application of light-emitting diode of ligand-stripped quantum dot light-emitting layer

A quantum dot light-emitting and light-emitting diode technology, which is applied in the manufacture of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., can solve the problems of low current density of quantum dot light-emitting diode devices and affect the brightness of quantum dot light-emitting diode devices, and achieve High-efficiency lighting sources and display devices, low production costs, and strong practicability

Active Publication Date: 2020-01-14
NANCHANG HANGKONG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the light-emitting layer of traditional quantum dot light-emitting diodes (QLED) is quantum dots with long carbon chain ligands such as oleic acid and oleylamine. The existence of these long carbon chain ligands will prevent the contact between quantum dots and affect the interaction between quantum dots. Charge transport leads to low current density of quantum dot light-emitting diode devices, which affects the brightness of quantum dot light-emitting diode devices

Method used

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  • Preparation method and application of light-emitting diode of ligand-stripped quantum dot light-emitting layer

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Embodiment 1

[0027] A method for preparing a light-emitting diode with a ligand-stripped quantum dot light-emitting layer, the method comprising the following steps,

[0028] Step 1: Quantum dot solution preparation: Quantum dots are dissolved in dichloroethane to prepare a quantum dot solution with a concentration of 20 mg / m; wherein, quantum dots are colloidal nano-semiconductors composed of III-VI or II-V elements Material.

[0029] Step 2: Quantum dot ligand stripping: take 10ml of the quantum dot solution in step 1, add 1ml of electrophile, the electrophile can be benzoyl chloride, and sonicate for 10min;

[0030] Step 3: Quantum dot redispersion: add 0.5ml N,N-dimethylformamide to the solution in step 2, purify twice, and prepare quantum dot N,N-dimethylformamide with a concentration of 20mg / ml solution;

[0031] Step 4: Preparation of ligand-stripped quantum dot luminescent layer: spin-coat quantum dot N,N-dimethylformamide solution in step 3 on the hole transport layer, and annea...

Embodiment 2

[0040] A method for preparing a light-emitting diode with a ligand-stripped quantum dot light-emitting layer, the method comprising the following steps,

[0041] Step 1: Quantum dot solution preparation: Quantum dots are dissolved in n-hexane to prepare a quantum dot solution with a concentration of 30 mg / ml; wherein, the quantum dots are colloidal nano-semiconductor materials composed of III-VI or II-V elements.

[0042] Step 2: Quantum dot ligand stripping: Take 10ml of the quantum dot solution in step 1, add 1ml of electrophile, the electrophile can be benzoyl chloride, and sonicate for 10min;

[0043] Step 3: Redispersion of quantum dots: Add 0.5ml N,N-dimethylformamide to the solution in step 2, purify twice, and prepare quantum dot N,N-dimethylformamide with a concentration of 30mg / ml solution;

[0044] Step 4: Preparation of ligand-stripped quantum dot luminescent layer: spin-coat quantum dot N,N-dimethylformamide solution in step 3 on the hole transport layer, and ann...

Embodiment 3

[0053] A method for preparing a light-emitting diode with a ligand-stripped quantum dot light-emitting layer, the method comprising the following steps,

[0054] Step 1: Quantum dot solution preparation: Quantum dots are dissolved in toluene to prepare a quantum dot solution with a concentration of 40 mg / ml; wherein, the quantum dots are colloidal nano-semiconductor materials composed of III-VI or II-V elements.

[0055] Step 2: Quantum dot ligand stripping: take 10ml of the quantum dot solution in step 1, add 1ml of electrophile, the electrophile can be benzoyl chloride, and sonicate for 10min;

[0056] Step 3: Redispersion of quantum dots: Add 0.5ml N,N-dimethylformamide to the solution in step 2, purify twice, and prepare quantum dot N,N-dimethylformamide with a concentration of 40mg / ml solution;

[0057] Step 4: Preparation of ligand-stripped quantum dot luminescent layer: spin-coat quantum dot N,N-dimethylformamide solution in step 3 on the hole transport layer, and anne...

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Abstract

The invention discloses a preparation method and application of a light-emitting diode of a ligand-stripped quantum dot light-emitting layer. The preparation method comprises the following steps of: dispersing traditional oleic acid and oleylamine ligand quantum dots into a non-polar solvent n-hexane, methylbenzene or dichloroethane solvent; then adding an electrophilic reagent benzoyl chloride, performing ultrasonic treatment, then adding N, N-dimethylformamide (DMF), performing violent oscillation on a vortex oscillator, performing purification to obtain quantum dots of which the ligand is dispersed in the N, N-dimethylformamide (DMF) after stripping, and preparing a high-brightness quantum dot light-emitting diode. Quantum dot ligand stripping is carried out, the current density of thequantum dot light emitting diode can be improved by 3-5 times, the brightness of the quantum dot light emitting diode is improved by 40% or above, and the preparation method and application of the light-emitting diode of a ligand-stripped quantum dot light-emitting layer have the advantages of being good in product dispersity, easy to produce industrially, low in production cost, high in practicability and capable of creating more efficient lighting sources and display devices for life of people. According to the invention, a quantum dot light-emitting device with higher brightness is achieved, and the living needs of people are met.

Description

technical field [0001] The invention relates to the technical field of preparation methods of light-emitting diodes, in particular to a preparation method of a light-emitting diode with a ligand-stripped quantum dot light-emitting layer and its application. Background technique [0002] Lighting is a major demand of human society, and its energy consumption is an important part of energy consumption in today's society. Due to the advantages of high brightness and low energy consumption, the current light-emitting diode (LED) has become a new generation of lighting source. The organic light-emitting diode (OLED) that does not need a backlight is more popular in the market today, but the life of the OLED is short, the yield rate is not high, and the actual effect is not good. With the development of lighting and display technology, quantum dot light-emitting diode (QLED) technology with free wavelength adjustment, high color purity and simple process has attracted more and mo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56
CPCH10K71/12H10K71/15
Inventor 段军红邹时兵冯璐欣刘艳彬樊昊
Owner NANCHANG HANGKONG UNIVERSITY
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