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Preparation method of single crystal substrate

A single crystal and substrate technology, which is applied in the fields of final product manufacturing, sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, etc., can solve problems such as the quality impact of crystal growth, and achieve the effect of improving crystal quality

Inactive Publication Date: 2020-02-11
YIGUAN INFORMATION TECH SHANGHAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Using this technology method, a complete GaN single crystal substrate can be obtained at a lower cost and is suitable for industrial mass production, but the disadvantage is that the quality of crystal growth will still be affected due to the existence of a weak bonding layer , and when the substrate size continues to expand, the success rate of lift-off will face challenges

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  • Preparation method of single crystal substrate
  • Preparation method of single crystal substrate
  • Preparation method of single crystal substrate

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Embodiment 1

[0041] See figure 1 , figure 1 It is a schematic flowchart of a method for preparing a single crystal substrate provided by an embodiment of the present invention. This embodiment provides a method for preparing a single crystal substrate, including:

[0042] Step 1, preparing the base structure;

[0043] Step 2, growing a single crystal substrate layer on the base structure;

[0044] Step 3, peeling off the single crystal substrate layer from the base structure to obtain a single crystal substrate.

[0045] The base structure of this embodiment can be prepared from III-V compound semiconductor materials, such as GaN-based materials, and then directly grow a single crystal substrate layer on the base structure, and the material of the single crystal substrate layer can also be III-V compound semiconductor materials. Group V compound semiconductor materials, the material of the single crystal substrate layer can be GaN-based materials, for example, after the growth of the sin...

Embodiment 2

[0047] On the basis of the above-mentioned embodiments, this embodiment specifically describes the method for preparing the single crystal substrate in the first embodiment.

[0048] See Figure 2a~2h , Figure 2a~2h It is a schematic diagram of a method for preparing a single crystal substrate provided by an embodiment of the present invention. In a specific embodiment, Step 1 in Embodiment 1 may specifically include Step 1.1 to Step 1.4, wherein:

[0049] Step 1.1, see Figure 2a , select the substrate layer 101;

[0050] Specifically, the substrate layer 101 may include, for example, silicon (Si), silicon carbide (SiC), diamond, sapphire (Al 2 o 3 ), gallium arsenide (GaAs), aluminum nitride (AlN), gallium nitride (GaN), metals, metal oxides, compound semiconductors, glass, quartz or composite materials, etc. The substrate layer 101 may also include a single crystal material with a specific crystal phase orientation, such as m-plane SiC or sapphire, α-plane sapphire, ...

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Abstract

The invention discloses a preparation method of a single crystal substrate. The preparation method comprises the steps that a base structure is prepared; a single crystal substrate layer grows on thebase structure; and the single crystal substrate layer is peeled from the base structure to acquire the single crystal substrate. According to the invention, the single crystal substrate layer directly grows on the base structure without any intermediate layer materials such as a sacrificial layer and a flexible bonding layer, which can greatly improve the crystalline quality of a single crystal thick film.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for preparing a single crystal substrate. Background technique [0002] GaN-based materials mainly include GaN, BN and Al x Ga y In 1-x-y N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) alloy material. The GaN material series has low heat generation rate and high breakdown electric field, and is an important material for the development of high-temperature, high-power electronic devices and high-frequency microwave devices. At the same time, the GaN material series is also an ideal short-wavelength light-emitting device material. The band gap of GaN and its alloys covers the spectral range from red to ultraviolet. Since Japan developed the homojunction GaN blue LED in 1991, InGaN / AlGaN double heterojunction ultra-brightness blue LED and InGaN single quantum well GaN LED have come out one after another. Because of the many excellent properties of the GaN material series...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L29/06H01L33/00H01L33/20
CPCH01L33/20H01L21/0243H01L21/02538H01L21/02634H01L29/0657H01L21/7806H01L21/02458H01L21/0265H01L21/02639H01L2221/68368H01L2221/6835H01L2221/68381H01L21/6835H01L21/02376H01L21/02378H01L21/02381H01L21/02389H01L21/02395H01L21/0242H01L21/02496H01L21/0254H01L21/0262H01L21/30612
Inventor 姜涛
Owner YIGUAN INFORMATION TECH SHANGHAI CO LTD
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