Texturing cleaning method and heterojunction battery

A technology of texturing and silicon wafers, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as poor texture quality, and achieve the effect of stable ozone concentration and low chemical cost

Inactive Publication Date: 2020-02-21
CHANGZHOU S C EXACT EQUIP +1
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the defect of poor suede quality in the existing process, the present invention proposes a suede cleaning method and a heterojunction battery, which has the advantages of low cost, good suede consistency, and more environmental protection

Method used

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  • Texturing cleaning method and heterojunction battery

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Embodiment approach

[0042] Then the silicon wafer is oxidatively cleaned, the silicon wafer is soaked in an oxidative cleaning solution, and the cleaning solution reacts with the surface of the silicon wafer to form a uniform oxide layer of about 10 angstroms on the surface of the silicon wafer again. Specifically, there are two implementations for oxidative cleaning of silicon wafers. The first implementation includes: oxidative cleaning of silicon wafers with a mixed solution containing ozone and hydrochloric acid, and the concentration of ozone in the mixed solution containing ozone and hydrochloric acid The concentration of hydrochloric acid is 10-20PPM, the concentration of hydrochloric acid is 0.01%-0.5, the balance is deionized water, the temperature of the mixed solution is room temperature, and the reaction time is 90-180s.

[0043] The second embodiment includes: performing oxidative cleaning on the silicon wafer with a mixed solution containing potassium hydroxide and hydrogen peroxide,...

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Abstract

The invention discloses a texturing cleaning method and a heterojunction battery. The texturing cleaning method comprises the following steps of 1, using a mixed solution containing ozone to preprocess a silicon wafer, and generating an oxidation layer where pollutants are attached on a surface of the silicon wafer in a preprocessing process; 2, removing the oxide layer on the surface of the silicon wafer through an alkali liquor; 3, carrying out oxidative cleaning on the silicon wafer after water washing, and generating an oxide layer on the surface of the silicon wafer again in a cleaning process; 4, texturing the silicon wafer through the alkali liquor; 5, washing the silicon wafer for at least one time; 6, decontaminating the silicon wafer by using the alkali liquor containing hydrogenperoxide; 7, after water washing, carrying out rounding treatment on the surface of the silicon wafer by using an ozone-containing acid solution; 8, carrying out acid washing on the silicon wafer after the water washing; and 9, drying the silicon wafer after the water washing. The method has advantages of low cost, good suede consistency, environmental protection and the like.

Description

technical field [0001] The invention relates to the technical field of solar photovoltaic cells, in particular to a cleaning method for making texture and a heterojunction cell. Background technique [0002] Heterojunction cells are a type of high-efficiency photovoltaic solar cells. Compared with traditional crystalline silicon photovoltaic solar cells, heterojunction cells are more and more popular in the market because of their higher conversion efficiency. However, heterojunction cells have relatively high requirements for each process in the manufacturing process, specifically referring to cleanliness requirements, suede requirements, film layer requirements, etc. The conversion efficiency of heterojunction cells is above 23.5%. The first process in the process is texturing cleaning, which is different from conventional texturing cleaning. The texturing cleaning process of heterojunction cells is more complicated. The existing heterojunction texturing cleaning technolog...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L31/18H01L31/0236H01L31/072
CPCH01L21/02057H01L21/02082H01L31/02363H01L31/072H01L31/1804Y02E10/50Y02P70/50
Inventor 左国军任金枝
Owner CHANGZHOU S C EXACT EQUIP
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