Method for controlling appearance and defects of molybdenum disulfide by temperature
A molybdenum disulfide, morphology technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve problems such as low catalytic efficiency
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Embodiment 1
[0019] a, will have 300nmSiO 2 The Si substrate of the oxide layer was cut into a rectangle, ultrasonically cleaned in acetone, ethanol and deionized aqueous solution for 15 minutes in turn, and then dried with a nitrogen gun. The acetone and ethanol were analytically pure;
[0020] b. Put the quartz boat containing 100mg of sulfur powder at the upstream furnace mouth of the tube furnace, and place the MoO 3 The powder was mixed with NaCl powder to form a Mo source precursor, where the mass fraction of NaCl was 10%. Place the Mo source precursor of 0.3 mg in the center of another quartz boat, then place the growth substrate upside down on the quartz boat, so that the polishing surface is facing the Mo source precursor, and finally place the quartz boat with the growth substrate on it. In the center of the tube furnace. Introduce a carrier gas with a flow rate of 200 sccm for 30 minutes of air replacement and cleaning, and then reduce the carrier gas flow rate to 30 sccm;
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Embodiment 2
[0023] a, will have 300nmSiO 2 The Si substrate of the oxide layer was cut into a rectangle, ultrasonically cleaned in acetone, ethanol and deionized aqueous solution for 15 minutes in turn, and then dried with a nitrogen gun. The acetone and ethanol were analytically pure;
[0024] b. Put the quartz boat containing 100mg of sulfur powder at the upstream furnace mouth of the tube furnace, and place the MoO 3 The powder was mixed with NaCl powder to form a Mo source precursor, where the mass fraction of NaCl was 10%. Place the Mo source precursor of 0.3 mg in the center of another quartz boat, then place the growth substrate upside down on the quartz boat, so that the polishing surface is facing the Mo source precursor, and finally place the quartz boat with the growth substrate on it. In the center of the tube furnace. Introduce a carrier gas with a flow rate of 200 sccm for 30 minutes of air replacement and cleaning, and then reduce the carrier gas flow rate to 30 sccm;
...
Embodiment 3
[0027] a, will have 300nmSiO 2 The Si substrate of the oxide layer was cut into a rectangle, ultrasonically cleaned in acetone, ethanol and deionized aqueous solution for 15 minutes in turn, and then dried with a nitrogen gun. The acetone and ethanol were analytically pure;
[0028] b. Put the quartz boat containing 100mg of sulfur powder at the upstream furnace mouth of the tube furnace, and place the MoO 3 The powder was mixed with NaCl powder to form a Mo source precursor, where the mass fraction of NaCl was 10%. Put 0.2mg of Mo source precursor on the center of another quartz boat, then place the growth substrate upside down on the quartz boat, so that the polishing surface is facing the Mo source precursor, and finally place the quartz boat with the growth substrate on it. In the center of the tube furnace. Introduce a carrier gas with a flow rate of 200 sccm for 40 minutes of air replacement and cleaning, and then reduce the carrier gas flow rate to 20 sccm;
[0029] ...
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