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Method for controlling appearance and defects of molybdenum disulfide by temperature

A molybdenum disulfide, morphology technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve problems such as low catalytic efficiency

Active Publication Date: 2020-02-25
EAST CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Usually single-layer and few-layer MoS 2 It is a triangular or hexagonal two-dimensional material crystal prepared by mechanical exfoliation, chemical vapor deposition or hydrothermal method, and the triangular and hexagonal crystals have few catalytically active boundary defects and low catalytic efficiency

Method used

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  • Method for controlling appearance and defects of molybdenum disulfide by temperature
  • Method for controlling appearance and defects of molybdenum disulfide by temperature
  • Method for controlling appearance and defects of molybdenum disulfide by temperature

Examples

Experimental program
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Effect test

Embodiment 1

[0019] a, will have 300nmSiO 2 The Si substrate of the oxide layer was cut into a rectangle, ultrasonically cleaned in acetone, ethanol and deionized aqueous solution for 15 minutes in turn, and then dried with a nitrogen gun. The acetone and ethanol were analytically pure;

[0020] b. Put the quartz boat containing 100mg of sulfur powder at the upstream furnace mouth of the tube furnace, and place the MoO 3 The powder was mixed with NaCl powder to form a Mo source precursor, where the mass fraction of NaCl was 10%. Place the Mo source precursor of 0.3 mg in the center of another quartz boat, then place the growth substrate upside down on the quartz boat, so that the polishing surface is facing the Mo source precursor, and finally place the quartz boat with the growth substrate on it. In the center of the tube furnace. Introduce a carrier gas with a flow rate of 200 sccm for 30 minutes of air replacement and cleaning, and then reduce the carrier gas flow rate to 30 sccm;

...

Embodiment 2

[0023] a, will have 300nmSiO 2 The Si substrate of the oxide layer was cut into a rectangle, ultrasonically cleaned in acetone, ethanol and deionized aqueous solution for 15 minutes in turn, and then dried with a nitrogen gun. The acetone and ethanol were analytically pure;

[0024] b. Put the quartz boat containing 100mg of sulfur powder at the upstream furnace mouth of the tube furnace, and place the MoO 3 The powder was mixed with NaCl powder to form a Mo source precursor, where the mass fraction of NaCl was 10%. Place the Mo source precursor of 0.3 mg in the center of another quartz boat, then place the growth substrate upside down on the quartz boat, so that the polishing surface is facing the Mo source precursor, and finally place the quartz boat with the growth substrate on it. In the center of the tube furnace. Introduce a carrier gas with a flow rate of 200 sccm for 30 minutes of air replacement and cleaning, and then reduce the carrier gas flow rate to 30 sccm;

...

Embodiment 3

[0027] a, will have 300nmSiO 2 The Si substrate of the oxide layer was cut into a rectangle, ultrasonically cleaned in acetone, ethanol and deionized aqueous solution for 15 minutes in turn, and then dried with a nitrogen gun. The acetone and ethanol were analytically pure;

[0028] b. Put the quartz boat containing 100mg of sulfur powder at the upstream furnace mouth of the tube furnace, and place the MoO 3 The powder was mixed with NaCl powder to form a Mo source precursor, where the mass fraction of NaCl was 10%. Put 0.2mg of Mo source precursor on the center of another quartz boat, then place the growth substrate upside down on the quartz boat, so that the polishing surface is facing the Mo source precursor, and finally place the quartz boat with the growth substrate on it. In the center of the tube furnace. Introduce a carrier gas with a flow rate of 200 sccm for 40 minutes of air replacement and cleaning, and then reduce the carrier gas flow rate to 20 sccm;

[0029] ...

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Abstract

The invention discloses a method for controlling the appearance and defects of molybdenum disulfide by temperature. The method is characterized in that by using MoO3 powder added with 10% NaCl as a Mosource precursor and sulfur powder as sulfur source precursor, two-dimensional MoS2 samples grow by a chemical vapor deposition method. A grown substrate is buckled upside down directly above a quartz boat loaded with the Mo source precursor, and is heated and grows at different temperatures to obtain two-dimensional MOS2 samples with different appearances and boundary defect densities. At a lower growth temperature, because the precursor molecules of MOS2 have a short migration distance on the substrate, the grown MOS2 samples are snowflakes containing more boundary defects; and with the increase of the temperature, the appearances of the MOS2 samples are gradually transited to leaf shapes and triangle shapes, and the boundary defects also decrease rapidly. Controlling the appearances and defects of molybdenum disulfide is of great significance to promote the application of the molybdenum disulfide in the field of catalysis.

Description

technical field [0001] The invention relates to the field of synthesis of nanometer materials, in particular to a method for controlling the morphology and defects of molybdenum disulfide by temperature. Background technique [0002] Two-dimensional layered transition metal chalcogenides have large specific surface area and rich physical and chemical properties, and have important application prospects in the fields of energy and catalysis. where MoS 2 It is the earliest two-dimensional material widely studied in transition metal chalcogenides. Single-layer MoS 2 Not only is it a semiconductor with a direct band gap, it also has important application value in the field of electrochemical catalysis of hydrogen evolution. Studies have shown that MoS 2 The active catalytic sites are located at defect sites, such as single crystal boundaries, S vacancy defects, etc., while in monolayer MoS 2 There is no catalytic activity at the surface of the upper and lower S atoms. Usua...

Claims

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Application Information

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IPC IPC(8): C23C16/30C23C16/52
CPCC23C16/305C23C16/52
Inventor 吴幸王超伦
Owner EAST CHINA NORMAL UNIVERSITY