Graphene photoelectric detector based on interdigital electrode structure

A technology of photodetector and electrode structure, which is applied in the field of optoelectronics, can solve the problems that graphene photodetectors cannot be practically applied and cannot take into account the responsivity, etc., and achieve the effects of improving photocurrent and bandwidth, reducing process difficulty, and being easy to integrate

Inactive Publication Date: 2020-02-28
苏州枫桥光电科技有限公司
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Problems solved by technology

[0004] Although graphene has a natural advantage of high bandwidth, because it only has a light absorption rate of 2.3%, it cannot take into

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  • Graphene photoelectric detector based on interdigital electrode structure
  • Graphene photoelectric detector based on interdigital electrode structure
  • Graphene photoelectric detector based on interdigital electrode structure

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Embodiment Construction

[0028] In order for those skilled in the art to better understand the patent of the present invention, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0029] The embodiments described below are only some embodiments of the present invention, not all embodiments; based on the embodiments of the present invention, other used embodiments obtained by those of ordinary skill in the art without making creative work , all belong to the protection scope of the present invention.

[0030] Such as figure 1 As shown, the present embodiment discloses that in order to achieve the above object, the technical solution adopted in the present invention is: a graphene photodetector based on an interdigitated electrode structure, the photodetector includes a substrate layer 1, and is arranged on the substrate layer 1 The optical waveguide on the substrate layer 1, the optical waveguide includes a first dielectric f...

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Abstract

The invention relates to a graphene photoelectric detector based on an interdigital electrode structure. The photoelectric detector comprises a substrate layer and an optical waveguide disposed on thesubstrate layer. The optical waveguide is provided with a dielectric isolation layer; the dielectric isolation layer is provided with two metal layers which are not in contact with each other; the two metal layers serve as electrodes; graphene layers are arranged on the two metal layers; and the graphene layers serve as light absorption layers. The provided graphene photoelectric detector based on the interdigital electrode is compatible with a CMOS process and has high performance.

Description

technical field [0001] The invention belongs to the field of optoelectronic technology, in particular to a graphene photodetector based on an interdigitated electrode structure. Background technique [0002] High-speed integrated photodetectors are devices that convert optical pulses in optical fibers or waveguides into electrical signals, and play a very important role in the field of integrated optoelectronics. Today's high-speed integrated photodetectors mainly include silicon germanium detectors with PIN junction structures and group III-V semiconductor photodetectors. However, their disadvantages are mainly that the detection speed has reached the theoretical limit and cannot be further improved, and the manufacturing process is relatively complicated. [0003] Graphene has extremely high carrier mobility, and its theoretical detection bandwidth can reach 500 GHz. It has very broad potential applications in the field of high-speed photoelectric detection. There have b...

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Application Information

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IPC IPC(8): H01L31/102H01L31/0232H01L31/0224
CPCH01L31/022408H01L31/02327H01L31/102
Inventor 张少先刘永慕飒米杜明李侠
Owner 苏州枫桥光电科技有限公司
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