Metal oxide semiconductor thin film transistor array substrate and manufacturing method

Abstract

A method for manufacturing a metal oxide semiconductor thin film transistor array substrate, in which a layer of crystalline metal oxide semiconductor thin film and a layer of amorphous metal oxide semiconductor thin film are successively deposited on a gate insulating layer; The source and drain metal material layer made of copper electrode material is deposited on the material semiconductor film; the photoresist layer is formed by using a half-tone mask, and the formed photoresist layer includes the source / drain photoresist pattern area and the active layer photoresist Pattern area; simultaneously etch the source and drain metal material layer and the amorphous metal oxide semiconductor film to form the source and drain metal layer and the amorphous metal oxide semiconductor layer; etch the crystalline metal oxide semiconductor film to form crystallization state metal oxide semiconductor layer; further pattern the photoresist layer to remove the photoresist material in the photoresist pattern area of ​​the active layer; etch the source and drain metal layer and the amorphous metal oxide semiconductor layer to form the source, drain and channel.

Description

technical field [0001] The invention relates to the technical field of liquid crystal display, and in particular to a metal oxide semiconductor thin film transistor array substrate and a manufacturing method. Background technique [0002] Thin Film Transistor (TFT, Thin Film Transistor) is the core component of flat panel display, and any active matrix flat panel display depends on the control and driving of the thin film transistor. At present, the switching elements used in displays are mainly amorphous silicon (a-Si) thin film transistors and polycrystalline silicon (p-Si) thin film transistors, among which amorphous silicon thin film transistors are the most widely used, but amorphous silicon thin film transistors have electron mobility Low (only 0.3 ~ 1cm 2 / V·s), poor light stability and other issues. Although polycrystalline silicon thin film transistors are much higher than amorphous silicon thin film transistors in terms of low electron mobility, they have problem...

AI Technical Summary

Problems solved by technology

The result of the above-mentioned controversies is that the damage and diffusion pollution of amorphous indium gallium zinc oxide thin film transistors (IGZO TFTs) are still not effectively controlled, and it is difficult to obtain TFTs with excellent electrical stability.

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