III-nitride semiconductor avalanche photodetector and preparation method thereof

A nitride semiconductor, avalanche photoelectric technology, applied in the field of photodetectors, can solve the problems of low composite dark current, high reliability and low fringing electric field on the surface of the device, so as to reduce the surface composite dark current, improve the reliability of the device, reduce the The effect of fringing electric fields

Active Publication Date: 2020-03-24
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention aims to overcome at least one defect (deficiency) of the above-mentioned prior art, and provides a III-nitride semiconductor avalanche photodetector with a low fringe electric field, which e

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  • III-nitride semiconductor avalanche photodetector and preparation method thereof
  • III-nitride semiconductor avalanche photodetector and preparation method thereof
  • III-nitride semiconductor avalanche photodetector and preparation method thereof

Examples

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Example Embodiment

[0030] Example 1

[0031] Such as figure 1 As shown, this embodiment provides a III-nitride semiconductor avalanche photodetector, specifically an AlGaN semiconductor avalanche photodetector based on a PIN structure, which specifically includes: 0.4μm thick heavily doped n-type Al x Ga 1- x N ohmic contact layer 101, 160nm thick unintentionally doped Al y Ga 1-y N layer 102 and 100nm thick p-type layer; among them, heavily doped n-type Al x Ga 1-x The Al composition of the 101 layer of the N ohmic contact layer is x=0.6, and the electron concentration is 2×10 18 cm -3 , The unintentionally doped Al y Ga 1-y The Al composition of the N layer 102 is y=0.4, and the electron concentration is 6×10 16 cm -3 .

[0032] Further, the p-type layer includes p-type Al with higher doping concentration stacked sequentially from top to bottom. y Ga 1-y N layer 104, p-type Al with lower doping concentration y Ga 1-y N layer 103, the specific parameters are as follows:

[0033] (1) The low doping conc...

Example Embodiment

[0039] Example 2

[0040] Such as image 3 As shown, the present embodiment provides a III-nitride semiconductor avalanche photodetector, specifically, an AlGaN semiconductor avalanche photodetector based on a PIN structure-derived PININ absorption and multiplication separation structure, including: 0.4 μm thick Heavily doped n-type Al x Ga 1-x N ohmic contact layer 301, 0.18μm thick unintentionally doped Al y Ga 1-y N absorption layer 302, 60nm thick Al y Ga 1-y N charge layer 303, 130nm thick unintentionally doped Al y Ga 1-y The N multiplication layer 304 and a 100nm thick p-type layer; wherein the Al composition x=0.6, y=0.4, the heavily doped n-type Al x Ga 1-x The electron concentration of the N ohmic contact layer 301 is 2×10 18 cm -3 , The unintentionally doped Al y Ga 1-y The electron concentration of the N absorption layer 302 is 6×10 16 cm -3 , The electron concentration of the charge layer 303 is 1×10 18 cm -3 , The electron concentration of the multiplication layer 304...

Example Embodiment

[0048] Example 3

[0049] Such as Figure 4 As shown, the difference between this embodiment and Embodiment 1 is that the p-type Al with a higher doping concentration in the p-type layer y Ga 1-y The edge thickness of the N layer 104 is consistent with the thickness in the center of the device.

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Abstract

The invention discloses a III-nitride semiconductor avalanche photodetector and a preparation method thereof. The III-nitride semiconductor avalanche photodetector comprises an active layer, and the active layer sequentially comprises a heavily doped n-type AlxGa1-xN ohmic contact layer, an unintentionally doped AlyGa1-yN and a p-type layer according to a growth sequence from bottom to top. The p-type layer comprises a p-type AlyGa1-yN layer with relatively high doping concentration and a p-type AlyGa1-yN layer with relatively low doping concentration from top to bottom. The p-type AlyGa1-yN layer with the lower doping concentration is of a concave structure with a thin center and a thick edge, and the p-type AlyGa1-yN layer with the higher doping concentration is of a convex structure with a thick center and a thin edge, and the convex structure is matched with the p-type AlyGa1-yN layer with the lower doping concentration. Compared with the prior art, the p-type layer can limit the high electric field in the center of the table-type device, the electric field intensity is reduced at the edge of the table-type structure, the problem of advanced breakdown caused by the too high electric field at the edge is solved, and meanwhile, the effects of reducing the surface recombination current and improving the working reliability of the device are achieved.

Description

technical field [0001] The present invention relates to the technical field of photodetectors, more specifically, to a Group III nitride semiconductor avalanche photodetector and a preparation method thereof. Background technique [0002] Ultraviolet photodetectors based on ternary and trigroup nitride semiconductor AlGaN have attracted widespread attention because they can realize intrinsic visible light blindness (280-400nm) and solar-blind ultraviolet (220-280nm) detection. It has broad application prospects in fields such as detection, flame detection, environmental monitoring and astrophysics. In most ultraviolet detection applications, since the ultraviolet signal is usually very weak, it is required that the ultraviolet photodetector has low dark current, high quantum efficiency and high internal gain. With the advantages of high photocurrent gain, high response speed, and low noise, avalanche photodiodes are one of the most promising device types for high-sensitivit...

Claims

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Application Information

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IPC IPC(8): H01L31/105H01L31/0304H01L31/18
CPCH01L31/03048H01L31/105H01L31/1848Y02P70/50
Inventor 江灏张震华邱新嘉
Owner SUN YAT SEN UNIV
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