Delayed avalanche semiconductor device for inhibiting fringe electric field

Abstract

The invention discloses a delayed avalanche semiconductor device for inhibiting a fringe electric field. The delayed avalanche semiconductor device comprises an N + type substrate, a cathode, a P-drift region, a P + active region, an anode, an oxide layer and a side electrode, the cathode, the N + type substrate and the P-drift region are sequentially arranged from bottom to top; the cathode is in ohmic contact with the interface of the N + type substrate; performing ion implantation on the P-drift region to form a P + active region; the anode is positioned above the P + active region and is in ohmic contact with an interface of the P + active region; oxide layers are arranged on the two sides of the anode respectively; side electrodes are arranged on the side surface of the P-drift region and the side surface of the N + type substrate; the interface between the side electrode and the P-drift region is Schottky contact; and the side electrode is interconnected with the cathode through metal. According to the invention, the P + active region is formed in the P-drift region through ion implantation, and the side electrode is deposited on the side surface of the P-drift region and extends to the whole N + type substrate, so that the device is prevented from being broken down in advance at the edge before avalanche, and the avalanche reliability of the device is improved.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and in particular relates to a delayed avalanche semiconductor device for suppressing fringe electric fields. Background technique [0002] Since the rise of pulse power technology in the 1960s, high-power fast pulse technology has been widely used in many cutting-edge technology fields such as ultra-wideband radar, electromagnetic pulse generator, detection radar and microwave electronics. In practical high-power pulse applications, in the face of ultra-high-voltage pulses, it is necessary to cut off kiloampere-level currents within nanoseconds. Traditional switches cannot meet the requirements, and high-power fast pulse switches are particularly important. [0003] Prior to this, conventional switches have been widely used, including explosion switches, squibs, vacuum tubes, spark gaps, and thyratrons. However, the traditional switch has short working life, high cost, low e...

AI Technical Summary

Problems solved by technology

However, the traditional switch has short working life, high cost, low efficiency, large volume, unstable operation, easy to be interfered by external factors, and difficult to trigger synchronously.

With the development of the semiconductor industry, modern semiconductor switches have been well developed due to their advantages such as good stability, small size, and long life, but such switches cannot meet the requirements of high voltage and high repetition frequency at the same time

Under the premise of ensuring a high repetition rate, to achieve a high voltage, multiple low-voltage devices need to be connected in series and parallel to form a combined device, which increases the cost, complicates the circuit structure, and is not easy to trigger synchronously

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