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Preparation method of defect-containing WO3 photoelectrode

A photoelectrode and defect technology, applied in the direction of electrode, electrode shape/type, electrolysis process, etc., can solve the problems of high cost, complex preparation process, harsh reaction conditions, etc., and achieve the effect of low cost, simple process and simple equipment

Active Publication Date: 2020-04-07
GUIZHOU INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, traditional defect introduction methods often involve high-temperature inert atmosphere treatment, which not only requires harsh reaction conditions, but also requires complex and expensive preparation procedures.

Method used

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  • Preparation method of defect-containing WO3 photoelectrode
  • Preparation method of defect-containing WO3 photoelectrode
  • Preparation method of defect-containing WO3 photoelectrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] (1) WO 3 The preparation process of the photoelectrode is as follows: 3.3g of sodium tungstate was weighed and dissolved in 1000mL of deionized water, and stirred for 10 minutes to obtain a transparent and clear solution. Add 40 mL of HCl solution with a concentration of 5 mol / L to the above solution, stir for 10 minutes to obtain a yellow tungstic acid suspension, and then add 2.48 g of ammonium oxalate to obtain a transparent and clear solution. Put the cleaned FTO conductive glass with the conductive side down into the solution, and react in a water bath at 60°C for 8 hours to obtain bright yellow H 2 WO 4 electrode. The prepared H 2 WO 4 The electrode is placed in a muffle furnace and annealed at 500°C for 2 hours to obtain light yellow WO 3 electrode.

[0027] (2) Defect WO 3 The preparation process of the photoelectrode is as follows: the WO prepared in (1) 3 The electrode is connected to the Fe foil with a wire, and the WO 3 The electrode and Fe foil wer...

Embodiment 2

[0029] (1) WO 3The preparation process of the photoelectrode is as follows: Weigh 8.25g of sodium tungstate and dissolve it in 1000mL of deionized water, and stir for 10 minutes to obtain a transparent and clear solution. Add 100 mL of HCl solution with a concentration of 5 mol / L to the above solution, stir for 10 minutes to obtain a yellow tungstic acid suspension, and then add 6.2 g of ammonium oxalate to obtain a transparent and clear solution. Put the cleaned FTO conductive glass with the conductive side down into the solution, and react in a water bath at 60°C for 8 hours to obtain bright yellow H 2 WO 4 electrode. The prepared H 2 WO 4 The electrode is placed in a muffle furnace and annealed at 500°C for 2 hours to obtain light yellow WO 3 electrode.

[0030] (2) Defect WO 3 The preparation process of the photoelectrode is as follows: the WO prepared in (1) 3 The electrode is connected to the Fe foil with a wire, and the WO 3 The electrode and Fe foil were simul...

Embodiment 3

[0032] (1) WO 3 The preparation process of the photoelectrode is as follows: Weigh 16.5g of sodium tungstate and dissolve it in 1000mL of deionized water, and stir for 10 minutes to obtain a transparent and clear solution. Add 250mL of HCl solution with a concentration of 5mol / L to the above solution, stir for 10 minutes to obtain a yellow tungstic acid suspension, and then add 12.4g of ammonium oxalate to obtain a transparent and clear solution. Put the cleaned FTO conductive glass with the conductive side down into the solution, and react in a water bath at 60°C for 8 hours to obtain bright yellow H 2 WO 4 electrode. The prepared H 2 WO 4 The electrode is placed in a muffle furnace and annealed at 500°C for 2 hours to obtain light yellow WO 3 electrode.

[0033] (2) Defect WO 3 The preparation process of the photoelectrode is as follows: the WO prepared in (1) 3 The electrode is connected to the Fe foil with a wire, and the WO 3 The electrode and Fe foil were simult...

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Abstract

The invention provides a preparation method of a defect-containing WO3 photoelectrode. A WO3 electrode grows on a conductive surface of conductive glass by adopting a water bath method, the WO3 electrode is connected with a metal foil by a wire, then the WO3 electrode and the metal foil are simultaneously immersed into an electrolyte solution with a certain concentration, the color of a WO3 film is gradually changed from yellow to blue, and meanwhile, defects are generated on the surface of the material. The light absorption characteristic and color change of the WO3 film can be controlled bycontrolling the reaction time, the reduction potential of the metal foil and the concentration of the solution. The preparation method is simple in process and beneficial to large-scale preparation and production. The material has a huge application prospect in the aspects of hydrogen production by photoelectrically decomposing water, chemochromism, solar cells and the like. The invention belongsto the technical field of photoelectrode improvement.

Description

technical field [0001] The present invention relates to a defective WO 3 The invention relates to a preparation method of a photoelectrode, which belongs to the technical field of photoelectrode improvement. Background technique [0002] With the rapid development of modern human society and the continuous growth of population, energy shortage has become the central problem restricting economic development, so all countries in the world are looking for new energy and energy-saving ways. Among many renewable and clean energy sources, the utilization of solar energy has attracted much attention, because solar energy is an inexhaustible, green and convenient natural energy source. According to the utilization of solar energy, it can be divided into three types, namely photoelectric conversion, photothermal conversion and photochemical conversion. As one of the photochemical conversion technologies of solar energy, the hydrogen production technology by photolysis of water has ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B11/03C25B11/04C25B1/04B82Y40/00
CPCC25B11/04C25B1/04B82Y40/00C25B1/55C25B11/031Y02E60/36
Inventor 张学亮蒋迪刘仪柯李杨罗大军
Owner GUIZHOU INST OF TECH
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