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A nitrogen-doped carbon quantum dot in-situ growth denitration and anti-sulfur catalyst and preparation method thereof

A technology of carbon quantum dots and in-situ growth, which is applied in the direction of catalyst activation/preparation, chemical instruments and methods, physical/chemical process catalysts, etc., to achieve high denitrification and sulfur resistance performance, good sulfur resistance performance, and denitration and sulfur resistance performance. Effect

Active Publication Date: 2021-06-01
FUZHOU UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Carrier-free MnO x -CeO 2 The catalyst has the highest low-temperature SCR activity in such reports so far, NO at 120°C x Can be converted almost completely to N 2 , but there is no suitable technology to successfully grow it in situ on carbon quantum dots

Method used

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  • A nitrogen-doped carbon quantum dot in-situ growth denitration and anti-sulfur catalyst and preparation method thereof
  • A nitrogen-doped carbon quantum dot in-situ growth denitration and anti-sulfur catalyst and preparation method thereof
  • A nitrogen-doped carbon quantum dot in-situ growth denitration and anti-sulfur catalyst and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Accurately weigh 0.1g of the above sample of self-made N-doped graphene oxide, dissolve it in 50mL of N,N-dimethylformamide (DMF for short) solvent, add 0.06g of sodium lauryl sulfate ( SDS for short), after ultrasonic dissolution, 0.2g of cerium acetate (Ce(Ac) 3 ) into the prepared above solution, put in a stirrer, and stir at room temperature for 1 hour until Ce(Ac) 3 completely dissolved. Then weigh 0.221g of tin tetrachloride (SnCl 4 ), added to the above solution, and continued to stir at room temperature for 1 hour until SnCl 4 completely dissolved. Then accurately weigh 0.099gKMnO 4 Dissolve in 20mL of N,N-dimethylformamide (DMF for short) solution and add to the above solution. Continue to react at room temperature for 1 hour. After the reaction, transfer the reaction solution into a polytetrafluoroethylene liner, conduct a hydrothermal reaction at 200°C for 1 hour, and place the obtained suspension in an oven at 102°C to dry to obtain the final composite ...

Embodiment 2

[0029] Accurately weigh 0.1g of the above sample of self-made N-doped graphene oxide, dissolve it in 50mL of N,N-dimethylformamide (DMF for short) solvent, add 0.06g of sodium lauryl sulfate ( SDS for short), after ultrasonic dissolution, 0.3g of cerium acetate (Ce(Ac) 3 ) into the prepared above solution, put in a stirrer, and stir at room temperature for 1 hour until Ce(Ac) 3 completely dissolved. Then weigh 0.331g of tin tetrachloride (SnCl 4 ), added to the above solution, and continued to stir at room temperature for 1 hour until SnCl 4 completely dissolved. Then accurately weigh 0.149gKMnO 4Dissolve in 20mL of N,N-dimethylformamide (DMF for short) solution and add to the above solution. Continue to react at room temperature for 1 hour. After the reaction, transfer the reaction solution into a polytetrafluoroethylene liner, conduct a hydrothermal reaction at 200°C for 5 hours, and place the obtained suspension in an oven at 102°C to dry to obtain the final composite ...

Embodiment 3

[0032] Accurately weigh 0.1g of the above sample of self-made N-doped graphene oxide, dissolve it in 50mL of N,N-dimethylformamide (DMF for short) solvent, add 0.06g of sodium lauryl sulfate ( SDS for short), after ultrasonic dissolution, 0.4g of cerium acetate (Ce(Ac) 3 ) into the prepared above solution, put in a stirrer, and stir at room temperature for 1 hour until Ce(Ac) 3 completely dissolved. Then weigh 0.442g of tin tetrachloride (SnCl 4 ), added to the above solution, and continued to stir at room temperature for 1 hour until SnCl 4 completely dissolved. Then accurately weigh 0.198gKMnO 4 Dissolve in 20mL of N,N-dimethylformamide (DMF for short) solution and add to the above solution. Continue to react at room temperature for 1 hour. After the reaction, transfer the reaction solution into a polytetrafluoroethylene liner, conduct a hydrothermal reaction at 200°C for 5 hours, and place the obtained suspension in an oven at 102°C to dry to obtain the final composite...

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Abstract

The invention discloses a nitrogen-doped carbon quantum dot in-situ growth denitrification and anti-sulfur catalyst and a preparation method thereof. Firstly, 2,4,6-triaminopyrimidine and cyanuric acid are used to graft graphene oxide to obtain a More N functional groups and defects, due to the existence of these oxygen-containing functional groups and defects, can interact with cerium acetate, and the Ce 3+ firmly bonded to the surface of N-doped graphene oxide. In addition, the addition of tin chloride can well bond the surface of N-doped graphene oxide with Ce 3+ The oxidation-reduction reaction is carried out, so that a large amount of Ce accumulates on the surface of N-doped graphene oxide 3+ , Ce 4+ , Sn 3+ and Sn 4+ ion. Finally, using potassium permanganate as an oxidant, redox reaction occurs on the surface of N-doped graphene oxide, so that the manganese-cerium-tin catalyst is grown on the surface of N-doped graphene oxide in situ, and finally nitrogen is prepared in one step by hydrothermal method. Doped carbon quantum dots in situ growth denitrification and antisulfur catalyst.

Description

technical field [0001] The invention belongs to the technical field of functional carbon quantum dot composite catalysts, and specifically relates to a nitrogen-doped carbon quantum dot in-situ growth denitrification and anti-sulfur catalyst and a preparation method thereof. Background technique [0002] With the rapid development of China's industrialization process, many inevitable pollutions have been produced, among which air pollution is the most serious and the most concerned issue among the many pollutions. The generation of air pollution has caused relatively bad damage to people's life, health, work and nature. At present, air pollution sources can be divided into fixed pollution sources and mobile pollution sources. The pollutants of the pollution sources are mainly pollutants produced by coal combustion, including PM2.5, PM10, sulfur dioxide, nitrogen oxides and nitrogen dioxide. These gases It will cause hazards such as smog, acid rain, photochemical smog and gr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J27/24B01J37/10B01J37/32B01D53/86B01D53/56
CPCB01D53/8628B01J27/24B01J37/0018B01J37/32
Inventor 郑玉婴郑伟杰
Owner FUZHOU UNIV
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