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Nitrogen-doped graphene grown in-situ by a self-assembled denitration and anti-sulfur catalyst and its preparation method

A nitrogen-doped graphene, in-situ growth technology, applied in chemical instruments and methods, physical/chemical process catalysts, separation methods, etc., to achieve the effect of good sulfur resistance

Active Publication Date: 2021-09-28
FUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Carrier-free MnO x -CeO 2 The catalyst has the highest low-temperature SCR activity in such reports so far, NO at 120°C x can be converted almost completely to N 2 , but there is no suitable technology to successfully grow it in situ on graphene

Method used

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  • Nitrogen-doped graphene grown in-situ by a self-assembled denitration and anti-sulfur catalyst and its preparation method
  • Nitrogen-doped graphene grown in-situ by a self-assembled denitration and anti-sulfur catalyst and its preparation method
  • Nitrogen-doped graphene grown in-situ by a self-assembled denitration and anti-sulfur catalyst and its preparation method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Accurately weigh 0.1g of GO@TAP-CA, dissolve it in 50mL of DMF, add PVP after ultrasonication for 10min, and then add 0.2g of Ce(Ac) after ultrasonication for 10min 3 , put into a stirrer, stir at room temperature for 1 hour, until Ce(Ac) 3 Dissolve completely; then add 0.221g of SnCl 4 , continue to stir at room temperature for 1 hour, until the SnCl 4 Dissolve completely; then accurately weigh 0.099gKMnO 4 Dissolve it in 20mL of DMF, add it to the above solution, and continue to react at room temperature for 4h. After the reaction, transfer the reaction solution to a watch glass and dry it in an oven at 102°C. Add the dried product to 1M concentrated sulfuric acid dissolved in the solution, then transferred to a polytetrafluoroethylene liner, subjected to hydrothermal reaction at 160°C for 10 hours, and the obtained product was repeatedly centrifuged and washed until neutral, and then dried in an oven at 102°C; Calcined at 800°C for 2 hours in a high-temperature tu...

Embodiment 2

[0040] Accurately weigh 0.1g of GO@TAP-CA, dissolve it in 50mL of DMF, add PVP after ultrasonication for 10min, and then add 0.3g of Ce(Ac) after ultrasonication for 10min 3 , put into a stirrer, stir at room temperature for 1 hour, until Ce(Ac) 3 Dissolve completely; then add 0.331g of SnCl 4 , continue to stir at room temperature for 1 hour, until the SnCl 4 Completely dissolve; then accurately weigh 0.149gKMnO 4 Dissolve it in 20mL of DMF, add it to the above solution, and continue to react at room temperature for 4h. After the reaction, transfer the reaction solution to a watch glass and dry it in an oven at 102°C. Add the dried product to 1M concentrated sulfuric acid dissolved in the solution, then transferred to a polytetrafluoroethylene liner, subjected to hydrothermal reaction at 160°C for 10 hours, and the obtained product was repeatedly centrifuged and washed until neutral, and then dried in an oven at 102°C; Calcined at 800°C for 2 hours in a high-temperature tu...

Embodiment 3

[0043] Accurately weigh 0.1g of GO@TAP-CA, dissolve it in 50mL of DMF, add PVP after ultrasonication for 10min, and then add 0.4g of Ce(Ac) after ultrasonication for 10min 3 , put into a stirrer, stir at room temperature for 1 hour, until Ce(Ac) 3 Dissolve completely; then add 0.442g of SnCl 4 , continue to stir at room temperature for 1 hour, until the SnCl 4 Completely dissolve; then accurately weigh 0.198gKMnO 4 Dissolve it in 20mL of DMF, add it to the above solution, and continue to react at room temperature for 4h. After the reaction, transfer the reaction solution to a watch glass and dry it in an oven at 102°C. Add the dried product to 1M concentrated sulfuric acid dissolved in the solution, then transferred to a polytetrafluoroethylene liner, subjected to hydrothermal reaction at 160°C for 10 hours, and the obtained product was repeatedly centrifuged and washed until neutral, and then dried in an oven at 102°C; Calcined at 800°C for 2 hours in a high-temperature tu...

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Abstract

The invention discloses a nitrogen-doped graphene grown in-situ by a self-assembled denitrification and anti-sulfur catalyst and a preparation method thereof, which uses graphene oxide as a precursor and utilizes 2,4,6-triaminopyrimidine and cyanuric Preparation of modified nitrogen-doped graphene with acid, and then using it as a catalyst support to in-situ grow ternary Mn‑Ce‑SnO on its surface x produced by the catalyst. Self-assembled ternary Mn-Ce-SnO in the present invention x The catalyst is uniformly and firmly loaded on the surface of the modified nitrogen-doped graphene through in-situ growth on the surface, so that the obtained composite material has good sulfur resistance while having high-efficiency denitrification capability.

Description

technical field [0001] The invention belongs to the technical field of graphene composite catalytic materials, in particular to a surface in-situ growth self-assembled ternary denitrification and anti-sulfur catalyst Mn-Ce-SnO x N-doped graphene and its preparation method. Background technique [0002] With the rapid development of China's industrialization process, many inevitable pollutions have been produced, among which air pollution is the most serious and the most concerned issue among the many pollutions. The generation of air pollution has caused a relatively bad impact on people's life, health, work and nature. At present, the main source of air pollution is the pollutants produced by coal combustion, including PM2.5, PM10, sulfur dioxide, nitrogen oxides and nitrogen dioxide, etc. These gases will cause haze, acid rain, photochemical smog and greenhouse effect hazards . [0003] As we all know, due to the large amount of electricity demand brought about by my co...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J27/24B01D53/86B01D53/56B01J35/10
CPCB01J27/24B01D53/8628B01D2251/2062B01J35/613B01J35/633B01J35/647B01J35/615
Inventor 郑玉婴郑伟杰
Owner FUZHOU UNIV
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