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a containing l1 2 Preparation method of ni-based multilayer film in ordered phase

An ordered phase, L12 technology, applied in the field of materials, can solve problems such as difficulty in obtaining strength, and achieve the effect of simple operation, good repeatability, and easy control of conditions

Active Publication Date: 2021-09-21
NANJING INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, non-equilibrium Ni / Ni prepared by magnetron sputtering 3 It is difficult to obtain L1 with superlattice lattice in Al multilayer film 2 Type ordered compound phase, this type of multilayer film is difficult to obtain the desired strength at high temperature

Method used

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  • a containing l1 <sub>2</sub> Preparation method of ni-based multilayer film in ordered phase
  • a containing l1 <sub>2</sub> Preparation method of ni-based multilayer film in ordered phase
  • a containing l1 <sub>2</sub> Preparation method of ni-based multilayer film in ordered phase

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Embodiment 1

[0029] Such as Figure 1 ~ Figure 4 As shown, one containing L1 2 The preparation method of the Ni-based multilayer film of ordered phase, comprises the following steps:

[0030] Step (1) SiO with a thickness of 0.5mm and a surface of 500nm 2 The monocrystalline silicon wafer substrate is ultrasonically cleaned by acetone and ethanol in sequence, and after drying, it is placed on the substrate stage of an ultra-high vacuum magnetron sputtering equipment for coating.

[0031] Step (2) adopts the DC magnetron sputtering method, and puts the metal target on the target stage of the vacuum chamber, and the background vacuum degree is 1.0×10 -5 Under the condition of Torr, argon gas is introduced and the flow rate is controlled to be 75 sccm, and the chamber pressure during sputtering is 2×10 - 3 Torr, apply a bias voltage of -60V on the substrate, the power of the Ni target is 100W, and pre-sputter for 20-30min to clean the remaining impurities on the substrate.

[0032] Step ...

Embodiment 2

[0035] A containing L1 2 The preparation method of the Ni-based multilayer film of ordered phase, comprises the following steps:

[0036] Step (1) SiO with a thickness of 0.5mm and a surface of 500nm 2 The monocrystalline silicon wafer substrate is ultrasonically cleaned by acetone and ethanol in sequence, and after drying, it is placed on the substrate stage of an ultra-high vacuum magnetron sputtering equipment for coating.

[0037] Step (2) adopts the DC magnetron sputtering method, and puts the metal target on the target stage of the vacuum chamber, and the background vacuum degree is 1.0×10 -5 Under the condition of Torr, argon gas is introduced and the flow rate is controlled to be 75 sccm, and the chamber pressure during sputtering is 2×10 - 3 Torr, apply a bias voltage of -60V on the substrate, the power of the Ni target is 100W, and pre-sputter for 20-30min to clean the remaining impurities on the substrate.

[0038] Step (3) After the pre-sputtering, adjust the b...

Embodiment 3

[0041] A containing L1 2 The preparation method of the Ni-based multilayer film of ordered phase, comprises the following steps:

[0042] Step (1) SiO with a thickness of 0.5mm and a surface of 500nm 2 The monocrystalline silicon wafer substrate is ultrasonically cleaned by acetone and ethanol in sequence, and after drying, it is placed on the substrate stage of an ultra-high vacuum magnetron sputtering equipment for coating.

[0043] Step (2) adopts the DC magnetron sputtering method, and puts the metal target on the target stage of the vacuum chamber, and the background vacuum degree is 1.0×10 -5 Under the condition of Torr, argon gas is introduced and the flow rate is controlled to be 75 sccm, and the chamber pressure during sputtering is 2×10 - 3 Torr, apply a bias voltage of -60V on the substrate, the power of the Ni target is 100W, and pre-sputter for 20-30min to clean the remaining impurities on the substrate.

[0044] Step (3) After pre-sputtering, adjust the bias ...

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Abstract

The invention discloses a kind of L1 containing 2 The preparation method of Ni-based multilayer film with ordered phase includes the following steps: Step (1): Select SiO with a thickness of 0.5 mm and a surface with a thickness of 500 nm 2 The single crystal silicon wafer is used as the substrate, and after cleaning and drying, it is ready for coating. Step (2): Using the DC magnetron sputtering method, apply a bias voltage of ‑60~‑100 V on the substrate, pre-sputter for 20~30 min, and clean the substrate. The invention provides a kind of containing L1 2 The preparation method of the Ni-based multilayer film of ordered phase solves the problem of insufficient strength of the Ni-based metal film at a temperature of 600 DEG C or after annealing treatment at the temperature. The invention has simple operation, easy control of conditions, good repeatability, and can be used For practical applications, it also provides guidance for the study of the improvement of high temperature mechanical properties of other metal multilayer films.

Description

technical field [0001] The invention relates to a method for preparing a Ni-based multilayer film, belonging to the field of material technology Background technique [0002] With the continuous development of the MEMS industry, the structure and function of MEMS devices are becoming more and more complex. Currently, MEMS devices are mostly composed of silicon-based materials and are increasingly used in various components such as movable components, pressure sensors, accelerometers and gyroscopes, as well as consumer electronics. So far, in the traditional MEMS manufacturing process based on IC technology, the method of reducing the number of defects in Si-based materials is usually used to avoid damage to Si-based materials due to its intrinsic brittleness, and products such as accelerometers and Two-dimensional sensors such as gyroscopes. However, due to the large internal stress of the deposited film of polysilicon, its thickness is often limited to within tens of micr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/18C23C14/16C23C14/35C23C14/58
CPCC23C14/165C23C14/185C23C14/345C23C14/352C23C14/5806
Inventor 张超张保森毛向阳马晨刘释轩
Owner NANJING INST OF TECH