Preparation method of visible-shortwave infrared light detection substrate based on oxide/gold nanorod/silicon

A gold nanorod, infrared light technology, applied in climate sustainability, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of hindering silicon application, limited light absorption intensity, and high carrier recombination rate, reaching Good detection characteristics, wide spectral response range and strong anti-interference ability

Active Publication Date: 2021-06-04
SHANGHAI NAT ENG RES CENT FORNANOTECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the high carrier recombination rate and limited light absorption intensity in pure silicon seriously hinder the application of silicon in the field of photodetection.

Method used

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  • Preparation method of visible-shortwave infrared light detection substrate based on oxide/gold nanorod/silicon
  • Preparation method of visible-shortwave infrared light detection substrate based on oxide/gold nanorod/silicon
  • Preparation method of visible-shortwave infrared light detection substrate based on oxide/gold nanorod/silicon

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] A visible-shortwave infrared photodetection substrate based on oxide / gold nanorods / silicon, which synthesizes small-sized gold nanorods with different aspect ratios by a silver-induced seedless method; The absorbing layer is annealed to obtain a more tightly bonded gold nanorod / silicon wafer substrate; different oxide films are deposited on the surface of the gold nanorod / silicon wafer substrate to form a heterojunction structure with good photoelectric response, and finally the oxide / gold nanorod / silicon substrate visible-short-wave infrared light detection substrate, prepared according to the following steps:

[0026] (1) Synthesis of gold nanorods with different aspect ratios: using silver-induced seedless method, using 0.22 M CTAB solution as the growth solution, adding 9.12 ml 10 mM HAuCl to 192.49 ml 0.22 M CTAB solution in sequence 4 solution, 5.4ml 10 mM AgNO 3 solution and 22.8 ml 0.053 M hydroquinone solution, after the solution became colorless, add 22.8 μl...

Embodiment 2

[0033] A visible-short-wave infrared light detection substrate based on oxide / gold nanorod / silicon, similar to Example 1, prepared according to the following steps:

[0034] (1) Synthesis of gold nanorods with different aspect ratios: using silver-induced seedless method, using 0.22 M CTAB solution as the growth solution, adding 9.12 ml 10 mM HAuCl to 192.49 ml 0.22 M CTAB solution in sequence 4 solution, 0.9ml 10 mM AgNO 3 solution, 22.8 ml 0.053 M hydroquinone solution, after the solution became colorless, add 18 μl 17.05 mM NaBH to the solution at a stirring rate of 1500 rpm 4 The ice-water mixture solution (0°C), stirring the solution for 2 minutes, then standing at a constant temperature of 30°C for more than 12 hours to fully react, centrifuged the above solution three times at 11,000 rpm for 15 minutes to remove CTAB in the solution, and obtained longitudinal surface plasmons Gold nanorods with excitonic absorption peak at 600nm;

[0035] (2) Load gold nanorods onto t...

Embodiment 3

[0039] A visible-short-wave infrared light detection substrate based on oxide / gold nanorod / silicon, similar to Example 1, prepared according to the following steps:

[0040] (1) Synthesis of gold nanorods with different aspect ratios: using silver-induced seedless method, using 0.22 M CTAB solution as the growth solution, adding 9.12 ml 10 mM HAuCl to 192.49 ml 0.22 M CTAB solution in sequence 4 solution, 3.6ml 10 mM AgNO 3 solution, 22.8 ml 0.053 M hydroquinone solution, after the solution became colorless, add 27.6 μl 17.05 mM NaBH to the solution at a stirring rate of 1000 rpm 4 The ice-water mixture solution (0°C), kept stirring for 2 minutes, then kept the solution at a constant temperature of 30°C for more than 12 hours, centrifuged the above solution three times at 11,000 rpm for 15 minutes to remove CTAB in the solution, and obtained longitudinal surface plasmons Gold nanorods with excitonic absorption peak at 850nm;

[0041] (2) Au nanorods loaded on the surface of ...

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Abstract

The invention relates to a preparation method of a visible-short-wave infrared light detection substrate based on an oxide layer / gold nanorod / silicon, and a silver-induced seedless method is used to synthesize small-sized gold nanorods with different aspect ratios; To the surface of the silicon wafer as a light absorbing layer, after annealing treatment to obtain a more tightly bonded gold nanorod / silicon wafer substrate; deposit different oxide films on the surface of the gold nanorod / silicon composite substrate to construct a heterojunction with good photoelectric response structure, and finally obtained a new visible-short-wave infrared light detection substrate of oxide / gold nanorod / silicon substrate. The composite substrate can exhibit extremely high detection sensitivity to visible-short-wave infrared light. Compared with the prior art, the detection substrate obtained by the present invention has the advantages of wide spectral response range, high response sensitivity, adjustable response band, strong anti-interference ability and the like.

Description

technical field [0001] The invention belongs to the field of semiconductor nanomaterials and photoelectric detection, and in particular relates to a preparation method of a visible-short-wave infrared light detection substrate based on oxide / gold nanorod / silicon. Background technique [0002] In the 21st century, information technology and the Internet have increasingly profound influence on human society. With the support of high-tech technologies such as 5G, big data, and cloud computing, the future is about to enter the era of the Internet of Things and artificial intelligence. higher requirement. When "Moore's Law" is gradually failing, the problems of traditional semiconductor devices such as difficulty in miniaturization, performance bottlenecks, and substantial increase in power consumption are becoming more and more prominent. Therefore, the task of developing new semiconductor devices is imminent. Nanomaterials have become a research hotspot due to their many uniqu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0352H01L31/109
CPCH01L31/035227H01L31/109H01L31/18Y02P70/50
Inventor 崔大祥白仕亨卢静金彩虹
Owner SHANGHAI NAT ENG RES CENT FORNANOTECH
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