Preparation method of nitrogen-doped graphene material based on 4-amino-1,2,4-triazole-5-one

A technology of nitrogen-doped graphene and graphene, applied in chemical instruments and methods, inorganic chemistry, non-metallic elements, etc., can solve the problems of graphene materials not easy to compound, application limitations, etc., to increase the free carrier density , improve conductivity and stability, and enhance the effect of interaction

Inactive Publication Date: 2020-04-17
GUANGDONG UNIV OF PETROCHEMICAL TECH
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  • Abstract
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  • Application Information

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Problems solved by technology

[0005] The present invention provides a preparation method of nitrogen-doped graphene material based on 4-amino-1,2,4-triazol-5-one, aiming to solve the problem that graphene material is not easy to be combined with other materials, resulting in limited application The problem

Method used

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  • Preparation method of nitrogen-doped graphene material based on 4-amino-1,2,4-triazole-5-one
  • Preparation method of nitrogen-doped graphene material based on 4-amino-1,2,4-triazole-5-one
  • Preparation method of nitrogen-doped graphene material based on 4-amino-1,2,4-triazole-5-one

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Experimental program
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Effect test

Embodiment 1

[0019] Add 0.1 g of graphene with a sheet diameter of 0.2 μm into 25 ml of deionized water, stir magnetically at 600 r / min for 60 minutes, then place it in an ultrasonic disperser, and ultrasonicate for 60 minutes to obtain 4 mg / ml of graphite Alkene solution.

[0020] Dissolve 0.2 g of 4-amino-1,2,4-triazol-5-one into 25ml of deionized water, add the above graphene solution, heat at 100°C for 30min, cool down to 0°C, and dry for 48h to obtain a graphene package coated 4-amino-1,2,4-triazol-5-one co-crystal.

[0021] Grind the graphene-coated 4-amino-1,2,4-triazol-5-one eutectic into powder, place it in a tube furnace and heat it to 600°C for 4 hours to obtain a nitrogen content of 16 . 1% nitrogen doped graphene material.

Embodiment 2

[0023] Add 0.1 g of graphene with a sheet diameter of 100 μm into 25 ml of deionized water, stir magnetically at 600 r / min for 60 minutes, then place it in an ultrasonic disperser and ultrasonicate for 30 minutes to obtain a 4 mg / ml graphene solution.

[0024] Dissolve 0.1g of 4-amino-1,2,4-triazol-5-one into 25ml of deionized water, add the above graphene solution, heat at 70°C for 60min, cool down to 4°C, and dry for 48h to obtain a graphene package coated 4-amino-1,2,4-triazol-5-one co-crystal.

[0025] Grind the graphene-coated 4-amino-1,2,4-triazol-5-one eutectic into powder, heat it in a tube furnace to 600°C, and keep it for 4 hours to obtain a nitrogen content of 6.11%. Nitrogen-doped graphene materials.

Embodiment 3

[0027] Add 0.1 g of graphene with a sheet diameter of 100 μm into 25 ml of deionized water, stir magnetically at 600 r / min for 60 minutes, then place it in an ultrasonic disperser and ultrasonicate for 30 minutes to obtain a 4 mg / ml graphene solution.

[0028] Dissolve 0.4g of 4-amino-1,2,4-triazol-5-one into 25ml of deionized water, add the above graphene solution, heat at 70°C for 60min, cool down to 4°C, and dry for 48h to obtain a graphene package coated 4-amino-1,2,4-triazol-5-one co-crystal.

[0029] Grind the graphene-coated 4-amino-1,2,4-triazol-5-one eutectic into powder, heat it in a tube furnace to 600°C, and keep it for 4 hours to obtain a nitrogen content of 8.41%. Nitrogen-doped graphene materials.

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Abstract

The invention discloses a preparation method of a nitrogen-doped graphene material based on 4-amino-1,2,4-triazole-5-one. The method comprises the steps: dispersing graphene into deionized water; adding a 4-amino-1,2,4-triazole-5-one aqueous solution, heating for 30-60 min at the temperature of 50-100 DEG C, cooling to room temperature, and drying to obtain a graphene-coated 4-amino-1,2,4-triazole-5-one eutectic material; and grinding into powder, and heating for 1.5-6 h in a tubular furnace at the temperature of 500-800 DEG C to obtain the nitrogen-doped graphene material. The surface of the4-amino-1,2,4-triazole-5-one crystal is uniformly coated with graphene in the material obtained by the preparation method disclosed by the invention, and additives such as an adhesive and the like arenot needed, so that the surface performance of the 4-amino-1,2,4-triazole-5-one crystal is completely maintained.

Description

technical field [0001] The invention belongs to the technical field of material preparation, and in particular relates to a preparation method of a nitrogen-doped graphene material based on 4-amino-1,2,4-triazol-5-one (ATO). Background technique [0002] Graphene (G) is a two-dimensional honeycomb lattice material formed by the close bonding of planar single-layer carbon atoms, with a thickness of about 0.35nm, which is the thinnest two-dimensional material in the world. [0003] Graphene has no resistance for electrons to pass through, generates less heat, and has high electrical conductivity. It is the material with the best electrical conductivity known, and has unique properties. For example, the tensile strength can reach 130GPa; the carrier mobility can reach 15000-25000cm 2 / Vs (square centimeter per volt second), which can exceed 10 times that of silicon wafers; thermal conductivity can reach 5000W / mK (watt per millithermal conductivity), which is 3 times that of di...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/194
CPCC01B32/194
Inventor 朱佳平吴铛杨晓琳林若鹏方佳怡
Owner GUANGDONG UNIV OF PETROCHEMICAL TECH
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