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Tin oxide modified sensor, preparation method thereof and application thereof in nitrogen oxide gas-sensitive detection

A sensor and gas sensor technology, applied to modified SnO2 sensor and its preparation, and the application field of nitrogen oxide gas detection, can solve the problems of thermal safety, high power consumption, sensor sensitivity reduction, etc., to improve sensitivity and Effect of Gas Sensitive Performance

Active Publication Date: 2020-04-17
广州钰芯传感科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, SnO 2 Requires high operating temperature (over 200°C) to achieve high sensitivity, which not only brings thermal safety issues, but also leads to high power consumption, and leads to reduced sensor sensitivity, these factors limit the SnO 2 practical application of

Method used

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  • Tin oxide modified sensor, preparation method thereof and application thereof in nitrogen oxide gas-sensitive detection
  • Tin oxide modified sensor, preparation method thereof and application thereof in nitrogen oxide gas-sensitive detection
  • Tin oxide modified sensor, preparation method thereof and application thereof in nitrogen oxide gas-sensitive detection

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] SnO 2 Preparation of / RGOH gas sensor:

[0061] (1) 3D SnO 2 / Preparation of RGOH

[0062]Graphene is dispersed in deionized water to obtain 1mg / mL graphene aqueous solution, take 10mL graphene aqueous solution and add 90mg SnCl to it 2 2H 2 O, the mixture was sonicated for 10 min, sealed in an autoclave, and heated at 180 °C for 11 h to obtain 3D SnO 2 / RGOH.

[0063] (2) Preparation of chemical resistors

[0064] On Si / SiO 2 Substrate (260nm thick SiO on both sides 2 Layer 300μm silicon wafer) on the spin-coated photoresist, photolithography, sputtering 15nm Ti / 200nm Au layer and lift-off process, to obtain interdigital electrodes.

[0065] (3) Preparation of Micro Heater

[0066] Si / SiO used in said step (2) 2 On the other side of the substrate, photolithography, sputtering 15nm Ti / 300nm Pt layer and lift-off process were performed to obtain serpentine platinum microwires; then photolithography, sputtering 5nm Ti / 300nm Au layer and lift-off process were pe...

Embodiment 2

[0071] Flexible SnO 2 Preparation of / RGOH gas sensor:

[0072] (1) 3D SnO 2 / Preparation of RGOH

[0073] Graphene is dispersed in deionized water to obtain 1mg / mL graphene aqueous solution, take 10mL graphene aqueous solution and add 90mg SnCl to it 2 2H 2 O, the mixture was sonicated for 10 min, sealed in an autoclave, and heated at 180 °C for 11 h to obtain 3D SnO 2 / RGOH.

[0074] (2) Preparation of chemical resistors

[0075] Interdigital electrodes were obtained by spin-coating photoresist on the LCP film (using a 300 μm silicon wafer as the substrate) and then performing photolithography, sputtering 15nm Ti / 200 nm Au layer and lift-off process.

[0076] (3) Preparation of Micro Heater

[0077] Carry out photolithography, sputtering 15nm Ti / 300nm Pt layer and stripping process on the other side of the LCP film used in said step (2) to obtain serpentine platinum microwires; then carry out photolithography, sputtering 5nm Ti / 300nm Au layer and lift-off process, r...

Embodiment 3

[0082] SnO 2 Preparation of / RGOH gas sensor:

[0083] (1) 3D SnO 2 / Preparation of RGOH

[0084] Graphene is dispersed in deionized water to obtain 1mg / mL graphene aqueous solution, take 10mL graphene aqueous solution and add 90mg SnCl to it 2 2H 2 O, the mixture was sonicated for 10 min, sealed in an autoclave, and heated at 180 °C for 10 h to obtain 3D SnO 2 / RGOH.

[0085] (2) Preparation of chemical resistors

[0086] On Si / SiO 2 Substrate (260nm thick SiO on both sides 2 Layer 300μm silicon wafer) on the spin-coated photoresist, photolithography, sputtering 15nm Ti / 200nm Au layer and lift-off process, to obtain interdigital electrodes.

[0087] (3) Preparation of Micro Heater

[0088] Si / SiO used in said step (2) 2 On the other side of the substrate, photolithography, sputtering 15nm Ti / 300nm Pt layer and lift-off process were performed to obtain serpentine platinum microwires; then photolithography, sputtering 5nm Ti / 300nm Au layer and lift-off process were p...

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Abstract

The invention provides a SnO2-modified sensor, a preparation method thereof and an application of the SnO2-modified sensor in nitrogen oxide gas-sensitive detection. SnO2 is modified on RGO hydrogel of a 3D structure, a SnO2 / RGOH gas sensitive sensor is prepared through a hydrothermal synthesis method, a micro heater is prepared on the other side of a substrate and used for adjusting the detectiontemperature and humidity, and the SnO2 / RGOH gas sensitive sensor is applied to NO2 gas detection. The method is advantaged in that the method is of low detection limit, high sensitivity, excellent selectivity and interference resistance, sensitivity of the sensor is 4.3 ppm<-1>, and the detection limit is 2.8 ppb; the sensor can use a flexible substrate, so the sensor can maintain high sensitivity and high reliability under the condition of high bending, and high-sensitivity and high-selectivity detection of NO2 can be realized under the condition of normal temperature.

Description

technical field [0001] The invention belongs to the technical field of gas sensors and relates to a modified SnO 2 The sensor and its preparation method and its application in gas sensitive detection of nitrogen oxides. Background technique [0002] With the rapid development of industrial and agricultural technology, air pollution has become a global problem that urgently needs to be solved. The detection of harmful gases is very important for environmental protection and personal health care. Nitrogen dioxide (NO 2 ) is a typical air pollutant produced by a variety of combustion, which can cause pollution phenomena such as acid rain, ozone and photochemical smog. In addition, nitrogen dioxide gas is still harmful to human health at concentrations as low as a few hundred ppb. The US Environmental Protection Agency (EPA) recommends reducing the annual NO2 standard to 53ppb. Therefore, it is necessary to develop NO with high sensitivity, low detection limit and strong an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12H05B3/12
CPCG01N27/125G01N27/127H05B3/12H05B2203/003Y02A50/20
Inventor 奚亚男胡淑锦
Owner 广州钰芯传感科技有限公司
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