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Phenolic resin composition for photoresists and photoresist composition

A photoresist, phenolic resin technology, applied in optics, optomechanical equipment, instruments, etc., can solve the problem of thinning the line width of liquid crystal display elements, and achieve high resolution, high developability, and high residual film. rate effect

Active Publication Date: 2020-04-21
UBE IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, liquid crystal display elements, etc. also have narrower line widths in the same way, and there is a trend towards miniaturization.

Method used

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  • Phenolic resin composition for photoresists and photoresist composition
  • Phenolic resin composition for photoresists and photoresist composition
  • Phenolic resin composition for photoresists and photoresist composition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0215] Hereinafter, although an Example demonstrates this invention more concretely, this invention is not limited to these Examples.

[0216] [1] Novolac type phenolic resin (A), novolac type phenolic resin (B)

[0217] The analysis method or evaluation method of the novolak type phenolic resin is as follows.

[0218] (1) Weight average molecular weight (Mw)

[0219] GPC measurement was performed under the following conditions, and the weight average molecular weight in terms of polystyrene was calculated|required.

[0220] Model: Waters e2695 Waters Co., Ltd.

[0221] Column: 1 piece of LF-804 manufactured by Shodex

[0222] Measuring conditions: column pressure 2.7MPa

[0223] Eluent: Tetrahydrofuran (THF)

[0224] Flow rate: 1mL / min

[0225] Temperature: 40°C

[0226] Detector: UV-Visible Detector 2489

[0227] WAVE LENGTH: 254nm

[0228] Injection volume: 100μmL

[0229] Sample concentration: 5mg / mL

[0230] (2) Alkali dissolution rate (DR)

[0231] 3 g of nov...

Synthetic example A1

[0237] [Synthesis Example A1] Novolak-type phenolic resin (A1)

[0238] 75.8 g (0.70 mol) of m-cresol, 113.8 g (1.05 mol) of p-cresol, 77.71 g (1.09 mol) of 42% formalin were added to a glass flask with a capacity of 1000 mL equipped with a thermometer, a feeding / distillation outlet, and a stirrer. mol) and 0.7 g of oxalic acid, reacted at 100° C. for 5 hours, then raised the temperature to 180° C. for dehydration. Thereafter, unreacted raw materials and the like were removed by vacuum distillation at 30 torr for 2 hours to obtain 142 g of m-p-cresol novolak-type phenolic resin (A1).

[0239] The obtained m-p-cresol novolak type phenolic resin (A1) had a weight average molecular weight of 5900, an alkali dissolution rate of 330 angstroms / second, a softening point of 142° C. and a hydroxyl equivalent of 128 g / eq.

Synthetic example A2

[0240] [Synthesis Example A2] Novolak-type phenolic resin (A2)

[0241] Except having changed 42% of formalin into 75.25 g (1.05 mol), it carried out similarly to synthesis example A1, and m-p-cresol novolac type phenolic resin (A2) was obtained. (A2) had a weight average molecular weight of 5000, an alkali dissolution rate of 480 angstroms / sec, a softening point of 140°C, and a hydroxyl equivalent of 127 g / eq.

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Abstract

A phenolic resin composition for photoresists, which is characterized by containing a novolac type phenolic resin (A) that is represented by general formula (1) and a novolac type phenolic resin (B) that has at least one of an arylene skeleton and a naphthalene skeleton in the structure in such amounts that the mass ratio of the novolac type phenolic resin (A) to the novolac type phenolic resin (B) is 5-95:95-5. (In general formula (1), each R1 represents a hydrogen atom, a linear or branched alkyl group having 1 to 8 (inclusive) carbon atoms, and the plurality of R1 moieties may be the same as or different from each other, provided that at least one of the R1 moieties is a linear or branched alkyl group having 1 to 8 (inclusive) carbon atoms; each p represents a number of 1 to 3 (inclusive) and the plurality of p's may be the same as or different from each other; each q represents a number of 1 to 3 (inclusive) and the plurality of q's may be the same as or different from each other;p and q satisfy (p + q) <= 4; and n represents an integer of 0 or more.)

Description

technical field [0001] The present invention relates to a phenolic resin composition for a photoresist and a photoresist composition comprising the phenolic resin composition for a photoresist. Background technique [0002] In recent years, the line width of a circuit pattern of an integrated circuit semiconductor has been miniaturized along with an increase in the density of integration. In addition, liquid crystal display elements and the like also tend to have narrower line widths and miniaturization. In the process of increasing the size and cost of display panels, there is a need for a technology capable of stably forming wiring on a large substrate with a simple process. [0003] In addition, in the conventional photolithography technology used in the semiconductor field, the process of forming wiring by wet etching or dry etching after patterning a resist film is becoming popular, and it is used in the manufacturing process of liquid crystal display elements. Also a...

Claims

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Application Information

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IPC IPC(8): C08G8/10G03F7/023
CPCC08G8/10G03F7/023G03F7/0236C08L61/12C08G8/20
Inventor 黑岩贞昭
Owner UBE IND LTD