Preparation method of graphite thermal field material for czochralski silicon crystal furnace

A thermal field material and single crystal technology, which is applied in the field of graphite thermal field material preparation for Czochralski single crystal silicon furnaces, can solve the problems of Si evaporation and SiC, heat preservation tube deformation, low temperature, etc., and achieve uniform and fine structure, chemical The effect of excellent indicators and scientific preparation process

Inactive Publication Date: 2020-05-12
DATONG XINCHENG NEW MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

2. The temperature of the lower half of the heating part is relatively low, and there are phenomena of Si evaporation and formation of SiC
[0009] 3. Insulation cylinder 1. The inner surface reacts with SiO gas

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0043] The technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0044]A method for preparing a graphite thermal field material for a Czochralski single crystal silicon furnace, comprising the following steps:

[0045] S1. Crushing, screening, and batching are to screen aggregates and powders according to the above particle sizes and batch them;

[0046] S2. Kneading: Add the graded ingredients into the kneading pot for stirring. The kneading is divided into dry mixing and wet mixing. The dry mixing is to add the aggregate and powder into the kneading pot for stirring. The kneading pot is a doubl...

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PUM

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Abstract

The invention relates to the technical field of graphite thermal fields, in particular to a preparation method of a graphite thermal field material for a Czochralski silicon crystal furnace. An aggregate is needlelike petroleum coke; a powder is graphene, pitch coke, carbon black and carbon fibers; a binder is modified medium-temperature coal pitch; and an impregnating agent is impregnating asphalt. The selection of the raw materials is reasonable, and the preparation process is scientific; the prepared graphite thermal field material for the czochralski silicon crystal furnace is uniform andfine in structure and high in volume density; the physical and chemical indexes of graphite are excellent; the volume density of the graphite thermal field material is larger than or equal to 2.0 g/cm<3>, the resistivity is smaller than or equal to 6.0 mu omega m, the breaking strength is larger than or equal to 32 Mpa, the compressive strength is larger than or equal to 65 Mpa, the porosity is smaller than or equal to 10%, the ash content is smaller than or equal to 0.2%, and the thermal expansion coefficient is smaller than or equal to 2 * 10 <-6 >/DEG C.

Description

technical field [0001] The invention relates to the technical field of graphite thermal field, and more specifically, relates to a method for preparing a graphite thermal field material for a Czochralski single crystal silicon furnace. Background technique [0002] The thermal system of the Czochralski single crystal furnace, also known as the thermal field, refers to the entire system for melting the silicon material and keeping the single crystal growth at a certain temperature. Simply put, the graphite thermal field is a complete graphite heating system for pulling single crystal silicon. The common ones are 18-inch, 22-inch and 24-inch graphite thermal fields. [0003] The thermal field generally includes (graphite material) pressure ring, insulation cover, upper, middle and lower insulation cover, graphite crucible (three-petal crucible), crucible support rod, crucible tray, electrode, heater, guide tube, graphite bolt, and in order to prevent Silicon leakage, the fur...

Claims

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Application Information

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IPC IPC(8): C04B35/83C04B35/52C04B35/532C04B35/622
CPCC04B35/83C04B35/532C04B35/522C04B35/622C04B2235/422C04B2235/424C04B2235/48C04B2235/602C04B2235/656C04B2235/6562C04B2235/6567C04B2235/658C04B2235/5436C04B2235/5445C04B2235/96C04B2235/77C04B2235/9607
Inventor 魏健张锦俊闵洁张培林庞中海武建军刘伟凯纪永良雷涛霍有张彦举陈永贵吕星薄徐保国孟鹏
Owner DATONG XINCHENG NEW MATERIAL CO LTD
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