Integrated optical beam splitter

Abstract

The invention discloses an integrated optical beam splitter. The integrated optical beam splitter comprises a first waveguide, a second waveguide and a mode spot converter, wherein a refractive indexcontrast of the second waveguide is higher than that of the first waveguide; the mode spot converter is arranged between the first waveguide and the second waveguide and is used for realizing mode conversion between the first waveguide and the second waveguide; the first waveguide includes an input waveguide and a beam splitting structure, and the first waveguide includes a first lower cladding, afirst core layer and a first upper cladding which are arranged in sequence; the second waveguide includes an output waveguide; the second waveguide includes a second lower cladding, a first core layer, a second core layer and a second upper cladding which are arranged in sequence; and the mode spot converter includes the first lower cladding, the first core layer, a second core layer, and the first upper cladding. The beam splitter has advantages that an input end of the beam splitter can be coupled with a standard single-mode optical fiber in a low-loss manner, and has a high optical nonlinear threshold value; and an output part of the beam splitter can be coupled with a high-integration-level functional device in the low-loss manner.

Description

technical field [0001] The invention relates to the technical field of optical chips, in particular to an integrated optical beam splitter. Background technique [0002] Silicon-based integrated optical chips use single crystal silicon as the substrate material, and form waveguide cladding and core layer structures through epitaxial growth, deposition, bonding, doping, etc. etc. to realize the transfer of waveguide patterns, and finally prepare integrated devices and systems with optoelectronic functions. [0003] Compared with traditional space or fiber optic devices, silicon-based integrated optical chips have the advantages of optoelectronic integration, compact structure, wide source of materials, compatibility with microelectronic processes, easy mass production, and low cost. With the maturity of microelectronic CMOS technology, the application of silicon-based integrated optical chips in optical communication, sensing, display, computing and other fields has graduall...

AI Technical Summary

Problems solved by technology

When the power density in the optical waveguide is too high, the nonlinear effects of the optical waveguide, such as two-photon absorption and Kerr effect, will increase chip loss and signal distortion, resulting in chip performance degradation

When the power density exceeds the integrated waveguide damage threshold, it will cause irreversible damage to the optical structure

Reducing the power density in the waveguide requires increasing the effective mode field area of ​​the waveguide, which will increase the bending radius of the waveguide and reduce the integration of the chip

[0006] In the prior art, the silicon / silicon dioxide, or silicon nitride / silicon dioxide material system has a relatively high refractive index contrast, and the single-mode waveguide in the optical communication C-Band mode field area is usually below 0.5um^2, and the bending radius 5um-100um, high integration, but low nonlinear effect threshold; doped silica system with low refractive index contrast, single-mode waveguide C-Band mode field area can reach more than 80um^2, nonlinear effect threshold is relatively low High, but the integration level is low, the waveguide bending radius is on the order of millimeters, and the chip size is large

[0007] In summary, it is difficult to manufacture a silicon-based optical chip that can withstand high-power beams and has a high degree of integration based on existing technologies

Images