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Carrier plate for growing thin film on substrate, growth device and growth method

A technology for carrying discs and substrates, applied in chemical instruments and methods, crystal growth, single crystal growth, etc., can solve the problems of inconvenient replacement, fragile, and difficult to find stable and adhesive adhesives, etc. The effect of short replacement cycle, high use cost and convenient replacement

Pending Publication Date: 2020-05-19
XIAMEN SANAN OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In the prior art, it is proposed to use screws to fix the support block on the bottom of the carrying plate for easy replacement. However, the screw is an additional fixing part, which is inconvenient to replace, and it is necessary to select the same type as the carrying plate, heat exchanger and support block. material, also fragile
There are also existing technologies that propose the use of adhesives. However, the growth conditions of MOCVD are at least 600°, and it is difficult to find adhesives with stable performance and good adhesion.

Method used

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  • Carrier plate for growing thin film on substrate, growth device and growth method
  • Carrier plate for growing thin film on substrate, growth device and growth method
  • Carrier plate for growing thin film on substrate, growth device and growth method

Examples

Experimental program
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Effect test

Embodiment 1

[0071] This embodiment provides a carrier tray for growing thin films on a substrate, which is more suitable for growing thin films under high temperature conditions. The high temperature conditions are usually growth conditions above 600°C, specifically, but not limited to, MOCVD growth devices for growing GaN-based films, AlGaInP-based films, AlGaAs-based films, GaAs-based films . The grown thin film can be used in but not limited to the following types of devices, such as LED light emitting devices or laser devices or solar cell devices.

[0072] The substrate for growing the thin film is preferably a sapphire or germanium-based or gallium arsenide-based or silicon-based or gallium nitride-based substrate or these substrates have additional film layers on their surfaces.

[0073] Specifically, such as Image 6 Shown is a susceptor for growing thin films on a substrate. The carrier plate includes a carrier body 200 and a plurality of individually detachable support blocks...

Embodiment 2

[0086] On the basis of the first embodiment, this embodiment provides an alternative solution, changing the shape of the groove on the inner side wall of the carrier body and the shape of the support block. Figure 11 Provides a schematic longitudinal sectional view from the upper surface side of the carrier tray to the lower surface, the carrier tray body includes several grooves 204 on the inner side wall below the step are T-shaped grooves, including along the horizontal direction A first portion 2041 extending circumferentially from the sidewall surface and a second portion 2042 extending vertically from the first portion 2041 to the lower surface side of the carrier tray, the first portion 2041 of the groove 204 extending circumferentially along the sidewall has a size D1, the second portion 2042 extends circumferentially along the sidewall with a dimension D2. Optionally, the horizontal depth of the first portion 2041 of the groove is consistent with the horizontal depth...

Embodiment 3

[0094] Different from Embodiment 1 and Embodiment 2, this embodiment provides another design of detachable support blocks. Such as Figure 15 As shown, a susceptor 200 for growing thin films on a substrate, the susceptor includes a susceptor body 200 , the body includes an upper surface side and a lower surface side, and a counterbore penetrates from the upper surface side to the lower surface side. A step 201 is formed on the side wall of the carrier plate in the counterbore, and the terrace of the step 201 is substantially parallel to the upper surface side and the lower surface side.

[0095] The carrier tray 200 includes such as Figure 16 A plurality of individually detachable support blocks 202 are shown, and the plurality of support blocks 202 are in a Z-shaped structure. Such as Figure 17 As shown, a plurality of support blocks 202 include a part suspended and supported by the step 201, and another part extends along the side wall of the body of the carrier to the ...

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Abstract

A carrier plate for growing a thin film on a substrate includes: a carrier plate body including an upper surface side and a lower surface side opposite to each other, and a hole penetrating through the lower surface side from the upper surface side; a plurality of grooves are formed in the side wall of the hole side, and table tops are arranged in the grooves; a plurality of supporting blocks usedfor supporting the base plate are supported on the inner side wall and can be independently detached from the bearing disc body; each supporting block comprises a first part protrusion which extendsfrom the side wall of the bearing disc body to the interior of the corresponding hole and comprises a second part protrusion, and each second part protrusion is inserted into one groove of the corresponding side wall, is supported by the table top in the corresponding groove and comprises a third part connected with the corresponding first part protrusion and the corresponding second part protrusion. One part of each supporting block is designed to be installed in the groove in the inner side wall of the counter bore of the bearing disc, no extra fixing piece is needed, installation and detachment are convenient, the service life of the bearing disc body is prolonged, and the production cost is reduced.

Description

technical field [0001] It can be applied to a carrier plate for growing thin films on the substrate surface, and the carrier plate can be used in MOCVD equipment. Background technique [0002] MOCVD technology uses organic compounds of group III and group II elements and hydrides of group V and group VI elements as crystal growth source materials, and conducts vapor phase epitaxy on the substrate by thermal decomposition reaction to obtain the required thin film, and grows various III Thin-layer single crystal materials of -V main group, II-VI subgroup compound semiconductors and their multiple solid solutions are widely used in the industry of compound semiconductor production equipment, such as blue or ultraviolet or red or infrared LEDs or lasers. [0003] When forming a desired thin film by MOCVD technology, on the one hand, it is known that the surface reactions generated by reactive raw material gases on the substrate surface are very complex, and it is very critical t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/12C23C16/458
CPCC23C16/4581C30B25/12
Inventor 张中英张宏铭罗云明
Owner XIAMEN SANAN OPTOELECTRONICS CO LTD
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