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Welding method of C-SiC sputtering target material

A welding method and sputtering target technology, which can be used in welding equipment, non-electric welding equipment, metal processing equipment, etc., can solve the problems of de-soldering between the target material and the backplane, difficult wetting treatment, etc., to achieve pure solder and increase the wetting effect. , The effect of saving product processing time

Active Publication Date: 2020-05-26
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the surface of the C-SiC target is difficult to infiltrate, and the general infiltration treatment method will have a large area of ​​poor infiltration on the welding contact surface with the back plate, which will lead to desoldering between the target and the back plate in severe cases

Method used

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  • Welding method of C-SiC sputtering target material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] This embodiment provides a welding method for C-SiC sputtering targets such as figure 1 As shown, the method includes the following steps:

[0043] (1) Perform shielding treatment on the C-SiC target and the back plate, then place solder on the welding surface of the C-SiC target and the back plate after shielding and heat up, after the temperature rise is completed, perform the welding process on the welding surface of the C-SiC and the back plate Wetting treatment to obtain the treated C-SiC target and back plate; the masking treatment is to use heat-resistant tape to cover the non-welding surface; the amount of solder added is 0.5kg; the solder is indium solder; The end temperature of the heating is 210°C; the infiltration treatment is carried out by an ultrasonic brazing machine; the power of the ultrasonic brazing machine is 1200W; the time of the infiltration treatment is 25min; the oxidized solder on the surface of the solder is removed after the infiltration tre...

Embodiment 2

[0049] This embodiment provides a welding method for a C-SiC sputtering target, the method comprising the following steps:

[0050] (1) Perform shielding treatment on the C-SiC target and the back plate, then place solder on the welding surface of the C-SiC target and the back plate after shielding and heat up, after the temperature rise is completed, perform the welding process on the welding surface of the C-SiC and the back plate Wetting treatment to obtain the treated C-SiC target and back plate; the masking treatment is to use heat-resistant tape to cover the non-welding surface; the amount of solder added is 0.8kg; the solder is indium solder; The end temperature of the heating is 230°C; the infiltration treatment is carried out by an ultrasonic brazing machine; the power of the ultrasonic brazing machine is 1300W; the time of the infiltration treatment is 20min; the oxidized solder on the surface of the solder is removed after the infiltration treatment ;

[0051] (2) ...

Embodiment 3

[0056] This embodiment provides a welding method for a C-SiC sputtering target, the method comprising the following steps:

[0057] (1) Perform shielding treatment on the C-SiC target and the back plate, then place solder on the welding surface of the C-SiC target and the back plate after shielding and heat up, after the temperature rise is completed, perform the welding process on the welding surface of the C-SiC and the back plate Wetting treatment to obtain the treated C-SiC target and back plate; the masking treatment is to use heat-resistant tape to cover the non-welding surface; the amount of solder added is 0.6kg; the solder is indium solder; The end temperature of the heating is 220°C; the infiltration treatment is carried out by an ultrasonic brazing machine; the power of the ultrasonic brazing machine is 1100W; the time of the infiltration treatment is 30min; the oxidized solder on the surface of the solder is removed after the infiltration treatment ;

[0058] (2) ...

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Abstract

The invention relates to a welding method of a C-SiC sputtering target material. The welding method comprises the steps of (1) carrying out shielding treatment on the C-SiC target material and a backplate, then placing solder on welding surfaces of the C-SiC target material and back plate which are subjected to the shielding treatment, carrying out heating, and carrying out soaking treatment on the welding surfaces of the C-SiC target material and the back plate after the heating is completed to obtain the treated C-SiC target material and back plate; (2) arranging a molten pool on the treated back plate obtained in the step (1), and simultaneously placing solder and arranging copper wires at equal intervals in the molten pool to obtain the treated back plate; and (3) carrying out buckling assembly and welding on the treated C-SiC target material obtained in the step (1) and the treated back plate obtained in the step (2). According to the welding method of the C-SiC sputtering targetmaterial, indium slag which has great influence on the welding result on the welding surfaces is removed, and it is ensured that the solder between the target material and the back plate is pure andpollution-free; and through the treatment mode, it is guaranteed that the average one-time welding bonding rate of the C-Scan ultrasonic detection of the C-SiC target material can reach 98% or above,the product processing time is greatly saved, and a large amount of cost is saved.

Description

technical field [0001] The invention relates to the field of target welding, in particular to a welding method for a C-SiC sputtering target. Background technique [0002] C-SiC is a powder metallurgy product with low density and brittleness, and it is easy to break when the product is rapidly cooled from high temperature to low temperature. The C-SiC target welding backplane material is mainly oxygen-free copper, which has high hardness and strength. Although many target welding methods are disclosed at this stage, such as CN109807453A discloses a high-purity copper rotary target end welding method, the end welding method of the present invention welds the end welding port or tail cap welding port in three steps , the first step is spot welding, the second step is arc segment welding, and the third step is circumferential welding. The method of the invention can prevent the high-purity copper rotating target from being deformed, the coaxiality between the copper alloy end...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K20/10B23K20/24
CPCB23K20/10B23K20/24
Inventor 姚力军潘杰边逸军王学泽祝龙飞
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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