A Tri-state Content Addressable Memory Based on 3d MOS Device

Abstract

The invention discloses a three-state content addressable memory based on a 3D MOS device. The 3D MOS device is composed of a metal layer, a memory layer, a rectification layer and a semiconductor layer that are in contact with each other in sequence. Each layer is built along different directions to form a three-dimensional Three-dimensional structure; the tri-state content addressable memory is composed of several storage units arranged in an array, all the storage units in the same row are connected to the same matching line, and all the storage units in the same column are connected to the same pair of complementary signal search lines. By setting the voltage levels of all signal search lines and matching lines in different clock cycles, the switch state of a row or a column of 3D MOS devices can be changed to complete data writing. The invention adopts non-volatile memory technology, which has the advantages of low energy consumption and small volume; the memory unit of the invention has a simple structure, can effectively reduce the cost of circuit and layout design, and simplify the preparation process; it is compatible with traditional CMOS technology, and is suitable for storage technology and The development of memory has important significance.

Description

technical field [0001] The invention belongs to the field of semiconductors and integrated circuits, and in particular relates to a high-density, low-power three-state content addressable memory based on a 3DMOS device having both memristive and rectifying characteristics. Background technique [0002] Tri-state content addressable memory (Ternary Content Addressable Memory, TCAM) is developed on the basis of content addressable memory (Content Addressable Memory, CAM). Content-addressable memory is a high-speed hardware search engine. Its biggest feature is that it can use the stored content as a keyword for search operations. Specifically, it is to input the data you want to find, and return the address where the data is stored after searching. and a match signal to show if the lookup was successful. [0003] There are only two states of each bit in general content addressable memory, "0" or "1", while each bit in tri-state content addressable memory has three states, exc...

AI Technical Summary

Problems solved by technology

[0006] Although non-volatile three-state content memory cells based on static random access memory (SRAM), magnetic memory (MRAM) and phase change memory (PCM) have been realized at present, their structures are complex, and their preparation processes cannot be completely compared with standard CMOS processes. Compatible, there are many defects such as power consumption, area, adjacent unit interference, etc.

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