Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Boron quantum dot, and stabilizing treatment method and application thereof

A stabilized treatment, quantum dot technology, applied in chemical instruments and methods, boron/boride, boron, etc., can solve the problem that boron quantum dots are difficult to exist stably, and achieve the effect of improving lithium storage performance

Active Publication Date: 2020-06-02
ZHONGBEI UNIV
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the technical problem that boron quantum dots are difficult to stably exist in the air, the present invention provides a boron quantum dot, its stabilization treatment method and application, and transfers the boron quantum dot from the liquid phase to the solid phase, Stabilized boron quantum dots

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Boron quantum dot, and stabilizing treatment method and application thereof
  • Boron quantum dot, and stabilizing treatment method and application thereof
  • Boron quantum dot, and stabilizing treatment method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] (1) Add the boron quantum dot solution with a concentration of 15 mg / mL dispersed in the liquid phase to the carbon nanotube and graphene solution with a concentration of 5-15 mg / mL;

[0029] (2) The solution in step (1) was stirred, ultrasonically broken, and then centrifuged at a centrifugal rate of 8000rpm for 20min to obtain a precipitate;

[0030] (3) freeze-dry the precipitate in step (2), the freeze-drying temperature is -52°C, and the duration is 10h, to prepare a composite boron quantum dot sample;

[0031] (4) Treat the freeze-dried sample in step (3) at high temperature in an inert environment, the maximum temperature is 500°C, and keep it warm for 2 hours, so that the boron quantum dots can stably exist in the carbon nanotubes and graphene.

[0032] Wherein the flow chart of above-mentioned boron quantum dot stabilization is as follows figure 1 As shown, the boron quantum dot solution in the liquid phase is added to the carbon nanotube and graphene solutio...

Embodiment 2

[0034] (1) Add the boron quantum dot solution with a concentration of 50 mg / mL dispersed in the liquid phase to the graphitized carboxyl multi-walled carbon nanotube solution with a concentration of 15 mg / mL;

[0035] (2) The solution in step (1) was stirred, ultrasonically dispersed, and then centrifuged at a centrifugal rate of 10,000 rpm for 40 minutes to obtain a precipitate;

[0036] (3) freeze-dry the precipitate in step (2), the freeze-drying temperature is -48°C, and the duration is 24h, to prepare a composite boron quantum dot sample;

[0037] (4) The freeze-dried sample in step (3) is subjected to high temperature treatment in an inert environment, the maximum temperature is 1000° C., and the temperature is kept for 5 hours, so that the boron quantum dots can stably exist in the graphitized multi-walled carbon nanotubes.

Embodiment 3

[0039] (1) Add the boron quantum dot solution with a concentration of 30 mg / mL dispersed in the liquid phase to the graphitized carboxyl multi-walled carbon nanotube solution with a concentration of 10 mg / mL;

[0040] (2) The solution in step (1) was stirred, ultrasonically dispersed, and then centrifuged at a centrifugal rate of 9000rpm for 30min to obtain a precipitate;

[0041] (3) Freeze-dry the precipitate in step (2), the freeze-drying temperature is -50°C, and the duration is 18 hours, to prepare a composite boron quantum dot sample;

[0042] (4) The freeze-dried sample in step (3) is subjected to high temperature treatment in an inert environment, the maximum temperature is 800° C., and the temperature is kept for 3 hours, so that the boron quantum dots are stably present in the graphitized multi-walled carbon nanotubes.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a boron quantum dot, and a stabilizing treatment method and an application thereof, belongs to the technical field of functional materials, and relates to a boron quantum dot technology. The technical problem that the boron quantum dot is difficult to stably exist in air is solved. The boron quantum dot stabilizing treatment method comprises the following steps: (1) addinga boron quantum dot solution dispersed in a liquid phase into a carbon nanotube and graphene solution to prepare a mixed solution; (2) stirring the mixed solution, ultrasonically crushing, centrifuging, and collecting the obtained precipitate; (3) freeze-drying the precipitate to obtain a composite boron quantum dot sample; and (4) carrying out high-temperature treatment on the sample subjected tofreeze drying in step (3) in an inert environment to make the boron quantum dot stably exist in the carbon nanotubes and the graphene. Compared with the prior art, the method makes a stable boron quantum dot composite material obtained, and enables the boron quantum dots to stably exist in the carbon nanotubes and graphene.

Description

technical field [0001] The invention belongs to the technical field of functional materials, and relates to boron quantum dot technology, in particular to a boron quantum dot, its stabilization treatment method and its use. Background technique [0002] Boron quantum dots are a new type of boron nanomaterials, which have important research significance in the fields of photocatalysis, light sensing, fluorescence imaging, neutron capture therapy, and new energy. Devices and other fields have potential application value. [0003] The methods currently used to prepare boron nanostructures mainly focus on magnetron sputtering, chemical vapor deposition, and ultra-high vacuum molecular beam epitaxy. Chinese patent 201910555713.7 discloses a method for preparing boron quantum dots with high yield by using high-energy ultrasonic crushing-assisted liquid phase exfoliation process at room temperature and normal pressure. Specifically, boron powder is used as the boron source for the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B35/02B82Y40/00B82Y20/00C09K11/63C09K11/02H01M4/583H01M10/0525C01B32/168C01B32/198C01B32/194
CPCC01B35/023B82Y40/00B82Y20/00C09K11/63C09K11/025H01M4/583H01M10/0525C01B32/168C01B32/198C01B32/194H01M2004/027C01B2202/06C01B2204/02Y02E60/10
Inventor 王慧奇安铎李莹苟立孙立文曹红红王延忠李宁常青薛超瑞胡胜亮
Owner ZHONGBEI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com