A device for processing semiconductor materials

Abstract

The invention provides a device for processing semiconductor materials, including a silicon wafer carrier and an electrode mechanism, the electrode mechanism includes an electrode group structure and an electrode seat structure, and the electrode seat structure can be connected to or connected to the electrode group structure disconnected, the electrode group structure is arranged in the vacuum furnace chamber, the electrode seat structure is arranged on the upper part of the vacuum furnace chamber, and the silicon wafer carrier and the electrode group structure can be combined or separated in the vacuum furnace chamber , the silicon wafer carrier is provided with a hollowed-out part, which can meet the requirement of double-sided processing of the silicon wafer. Adopting the electrode mechanism of the present invention can make the structure and process of the coating equipment more reasonable.

Description

technical field [0001] The invention relates to the field of solar cell manufacturing, in particular to a device for semiconductor or photovoltaic material processing. Background technique [0002] Semiconductor or photovoltaic materials are widely used in electronics, new energy and other industries. Semiconductor and photovoltaic materials usually need to be processed before they can be applied to products. Coating process, diffusion process, and oxidation process are some of the existing processing methods. [0003] As one of the important equipment of semiconductor device process equipment, vacuum furnace is widely used in the production of integrated circuits, power electronics, solar cells and other industries. In the photovoltaic industry, high-temperature vacuum furnaces are mainly used for doping single crystal silicon wafers and polycrystalline silicon wafers. , forming a PN junction. With the development of the photovoltaic industry, people have been pursuing the...

AI Technical Summary

Problems solved by technology

[0005] In the solar photovoltaic industry, PECVD is often used to prepare anti-reflection films such as silicon nitride films, silicon carbide films, silicon oxide films, etc.; traditional PECVD coatings are usually single-sided coatings, and traditional production equipment is easy to cause coiling. To avoid the problem of card dot printing, when the single-sidedness of the film is highly required, traditional equipment is no longer suitable

At the same time, for ultra-thin silicon wafers, it is easy to cause problems such as silicon wafer deformation and high fragmentation rate during the production process.

[0006] In the process of processing reaction, in order to grow the thin film on the surface of the silicon wafer, the silicon wafer needs to be in a certain atmosphere, such as a plasma state. In this case, the process conditions for thin film growth can be met. Generally speaking, graphite The electrode structure will be set on the boat, for example, the silicon wafer carrier itself has an electrode structure, which can be energized during production to make the gas near the silicon wafer carrier in a plasma state, but because the graphite boat and the silicon wafer structure need to be set at intervals, The silicon chip needs to be stuck in the card slot on the graphite boat. When inserting the chip into the graphite boat card slot, it is easy to damage the silicon chip or the electrode sheet.

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