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Amine titanium compound and preparation method thereof

A technology of titanium compound and dialkylamine, which is applied in the field of preparation of amine-titanium compound, can solve the problems affecting the transmission rate of the process, and achieve the effects of easy availability of raw materials, increased yield, and simple raw materials

Active Publication Date: 2020-06-09
苏州欣溪源新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the films deposited by these titanium sources have low resistance and good stability in the air, their low saturated vapor pressure will affect the transmission rate during the process

Method used

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  • Amine titanium compound and preparation method thereof
  • Amine titanium compound and preparation method thereof

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Embodiment 1

[0027] This embodiment is carried out in a 2L Schlenk bottle protected by an argon atmosphere, and all reagents used have been subjected to dehydration and deoxygenation treatment, and the steps are as follows:

[0028] Step 1: Add 800mL of n-hexane and 97g of N-ethylmethylamine to the Schlenk bottle in turn, and then add 2.5mol / L of n-butyl Lithium 610mL, stirred at room temperature for 5 to 10 hours to obtain n-hexane emulsion dissolved with lithium methylethylamide;

[0029] Step 2: Add 94g of titanium tetrachloride dropwise to the n-hexane emulsion prepared in step 1 at a rate of 1 to 3mL / min at -15 to -25°C, and raise the temperature to 40 to 60°C after the addition is complete. React for 12 to 24 hours to obtain tetrakis(methylethylaminotitanium);

[0030] Step 3: Add 7.5 g of hydrazine dropwise to the tetrakis(methylethylaminotitanium) obtained in step 2 at a rate of 1 to 3 mL / min at -15 to -25°C, and raise the temperature to 40 to 60°C after the addition is complete, ...

Embodiment 2

[0033] This embodiment is carried out in a 2L Schlenk bottle protected by an argon atmosphere, and the raw materials used are all treated with water and oxygen removal, and the steps are as follows:

[0034] Step 1: Add 700mL of n-hexane and 113g of diethylamine to the Schlenk bottle in sequence, then add 575mL of 2.5mol / L n-butyllithium dropwise at a rate of 1-3mL / min at -15~-25℃, and After stirring for 5 to 10 hours, the n-hexane emulsion dissolved with lithium diethylamide was obtained;

[0035] Step 2: Add 88g of titanium tetrachloride dropwise to the n-hexane emulsion prepared in step 1 at a rate of 1 to 3mL / min at -15 to -25°C, and raise the temperature to 40 to 60°C after the addition is complete. React for 12 to 24 hours to obtain tetrakis(diethylaminotitanium);

[0036] Step 3: Add 7.1 g of hydrazine dropwise to the tetrakis(diethylaminotitanium) obtained in step 2 at a rate of 1 to 3 mL / min at -15 to -25°C, and raise the temperature to 40 to 60°C after the addition ...

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Abstract

The invention discloses an amine titanium compound and a preparation method thereof and belongs to the technical field of organic chemistry. The preparation method of the amine titanium compound comprises the following steps: (1) uniformly mixing an alkane solvent and dialkylamine, dropwise adding n-butyllithium at a low temperature, and stirring at room temperature to obtain an alkane emulsion dissolved with dialkylamino lithium; (2) dropwise adding titanium tetrachloride into the alkane emulsion prepared in the step (1) at a low temperature, and performing heating for reaction after dropwiseadding is finished, so as to prepare tetra (dialkylamino titanium); and (3) dropwise adding hydrazine into the tetra (dialkylamino titanium) prepared in the step (2) at a low temperature, carrying out a heating reaction after dropwise adding is completed, then carrying out reduced pressure distillation, and collecting to obtain a fraction 1, 2-tri (dialkylamino) titanium-hydrazine. The method hasthe advantages of high yield, low cost, facilitation of industrial quantitative production, good product stability, and facilitation of the formation of a titanium-containing film through atomic layer deposition, especially a good titanium nitride film.

Description

technical field [0001] The invention relates to a technique in the field of organic chemistry, in particular to a preparation method of an amine-titanium compound. Background technique [0002] ALD (atomic layer deposition) technology has become one of the most ideal deposition methods due to its simple operation, highly controllable deposition parameters, and excellent deposition uniformity. The first significant use of ALD technology in semiconductor manufacturing was in the dynamic memory (DRAM) process. With the rapid development of integrated circuits, the integration of components on chips continues to increase, and the semiconductor technology node has entered the nanometer era. Many nitrides have important application prospects as diffusion barriers in microelectronic copper interconnects. [0003] Titanium nitride (TiN) is widely used in the ALD process of dynamic memories. Titanium nitride is both a good conductor and a good barrier to oxygen diffusion. Common T...

Claims

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Application Information

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IPC IPC(8): C07F7/28
CPCC07F7/003
Inventor 周健黄艺
Owner 苏州欣溪源新材料科技有限公司