High-pressure synthesis device for phosphorus-silicon-cadmium polycrystalline material and method thereof

Abstract

The invention provides a high-pressure synthesis device for a phosphorus-silicon-cadmium polycrystal material and a method thereof. The device comprises a synthesis material boat, a sealable quartz tube, a high-pressure furnace body, a temperature control unit and a pressure control unit; the high-pressure furnace body comprises a shell, a heating element and a high-pressure furnace tube, a heat preservation layer is arranged between the heating element and the shell, a flange is arranged at the opening end of the high-pressure furnace tube, and the other end of the high-pressure furnace tubeis sealed. The temperature control unit comprises a temperature control thermocouple and a temperature control instrument; two ends of the temperature control thermocouple are respectively connected with the temperature control instrument and the heating element; the pressure control unit comprises an air inlet valve, a pressure gauge, an exhaust valve and a safety relief valve which are connectedin sequence, and the other end of the air inlet valve is connected with the opening end of the high-pressure furnace tube; wherein the sealable quartz tube is positioned in the high-pressure furnacetube, and the synthetic material boat is positioned in the sealable quartz tube. By adopting the device, a large batch of high-purity phosphorus-silicon-cadmium polycrystal materials can be prepared at a time, and the device is used for high-quality phosphorus-silicon-cadmium single crystal growth.

Description

technical field [0001] The invention relates to a high-pressure synthesis device and method for phosphorus, silicon, and cadmium polycrystalline materials, belonging to the technical field of crystal growth. Background technique [0002] Mid-to-far infrared lasers have many applications in military and civilian fields. Using infrared nonlinear optical crystals to down-convert the optical frequency of existing lasers is the main way to obtain continuously tunable mid-to-far infrared lasers above 3 μm. Currently commercialized infrared nonlinear optical crystals include phosphorous germanium zinc, sulfur gallium silver, selenium gallium silver and so on. Phosphorus germanium zinc has excellent nonlinear optical properties and thermal properties, and can generate high-power mid-infrared lasers. However, due to the large optical absorption of phosphorus germanium zinc at about 1 μm, it cannot be pumped with a more mature light source of about 1 μm. pump, the pump source is seve...

AI Technical Summary

Problems solved by technology

Near the melting point, its saturated decomposition pressure is as high as 22atm, and cadmium phosphorus silicon is easy to react with quartz at high temperature, which can easily lead to the explosion of the synthetic crucible

Such a high temperature and decomposition pressure make it very difficult to synthesize high-purity cadmium phosphorus silicon polycrystalline material, which requires high equipment and synthesis process

Chinese patent document CN102168305A (Application No.: 201110083363.2) discloses a single-temperature-zone synthesis method for cadmium-phosphorus-silicon polycrystalline material, but the single-temperature-zone method will cause the explosion of the quartz tube when synthesizing large quantities of cadmium-phosphorus silicon raw material

Chinese patent document CN102191541A (application number: 201110083468.8) discloses a dual-temperature-zone synthesis method and device for phosphorus-silicon-cadmium polycrystalline material, but the phosphorus-cadmium binary phase produced by the above-mentioned dual-temperature zone method is easy to volatilize during the synthesis process, and the control is relatively complicated , it is easy to produce binary heterophase of phosphorus and cadmium in the synthesized phosphorus silicon cadmium

However, this method is complicated to operate and requires a lot of quartz crucibles

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