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Epitaxial structure of 940nm infrared LED and preparation method thereof

An epitaxial structure, infrared technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problem of low photoelectric conversion efficiency, achieve the effect of improving photoelectric conversion efficiency, reducing mismatch effect, and improving the quality of ohmic contact

Pending Publication Date: 2020-06-12
SHANXI FEIHONG MICRO NANO PHOTOELECTRONICS SCI & TECH
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Problems solved by technology

However, the photoelectric conversion efficiency of the current 940nm infrared LED is low, so how to improve the photoelectric conversion efficiency of the 940nm infrared LED has attracted widespread attention

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  • Epitaxial structure of 940nm infrared LED and preparation method thereof

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Embodiment Construction

[0031] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0032] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0033] like figure 1 As shown, the epitaxial structure of the 940nm infrared LED provided by the embodiment of the present invention includes, from bottom to top, a substrate 1, a substrate buffer layer 2, a lower cover layer 3, a lower waveguide layer 4, a first active layer 5, a crystal Grid buffer layer 6, second active layer 7, upper waveguide layer 8, current confinement layer 9, upper cladding layer 10, window layer 11 and ohmic contact layer 12, the first cladding layer 3 includes the first cladding layer 3- 1 and the second covering layer 3-2.

[0034] A...

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Abstract

The invention provides an epitaxial structure of a 940nm infrared LED and a preparation method of the epitaxial structure, and belongs to the field of display equipment. The epitaxial structure sequentially comprises a substrate (1), a substrate buffer layer (2), a lower covering layer (3), a lower waveguide layer (4), a first active layer (5), a lattice buffer layer (6), a second active layer (7), an upper waveguide layer (8), a current limiting layer (9), an upper covering layer (10), a window layer (11) and an ohmic contact layer (12) from bottom to top. The first cover layer (3) comprisesa first cover layer (3-1) and a second cover layer (3-2). According to the invention, the lattice quality of the epitaxial structure can be improved, high-barrier electrons are provided, the mismatcheffect of a well barrier is reduced, the quality of an active layer well is improved, the luminous efficiency of a device is improved, the electron-hole recombination rate is improved, the luminous efficiency of the device is improved, the device current can be uniformly distributed, and the ohmic contact quality is improved. Therefore, the photoelectric conversion efficiency of the 940nm infraredLED based on the epitaxial structure can be improved in multiple directions.

Description

technical field [0001] The invention relates to the technical field of display devices, in particular to an epitaxial structure of a 940nm infrared LED and a preparation method thereof. Background technique [0002] Infrared LED is a near-infrared light-emitting device that converts electrical energy into light energy. It has a series of advantages such as small size, low power consumption, and good directivity. It is widely used in remote control, telemetry, optical isolation, optical switch, photoelectric control, Target tracking and other systems. 940nm infrared LEDs are mainly used in infrared remote controls for home appliances. Since 940nm infrared is invisible light, it has little impact on the environment, and the wavelength of infrared light fluctuations is much smaller than the wavelength of radio waves, so 940nm infrared remote control will not affect other household appliances, nor will it affect nearby radio equipment. However, the photoelectric conversion eff...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/12H01L33/14H01L33/06H01L33/44H01L33/00
CPCH01L33/12H01L33/14H01L33/06H01L33/44H01L33/0075
Inventor 米洪龙杨杰关永莉吴小强杨鑫周王康申江涛陕志芳樊明明
Owner SHANXI FEIHONG MICRO NANO PHOTOELECTRONICS SCI & TECH
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