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Poly (4-methylpentene) and SiO2 microsphere composite film and preparation method thereof

A technology of methylpentene and composite film, which is applied in the field of composite film of poly-4-methylpentene and SiO2 microspheres and its preparation, can solve the problem of not being able to obtain a film with uniform thickness, and achieve uniform and controllable thickness, easy Promote the application, the effect of simple operation

Active Publication Date: 2020-06-16
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The solution casting method has the characteristics of simple operation and low cost, but the simple solution casting method cannot obtain a film with uniform thickness

Method used

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  • Poly (4-methylpentene) and SiO2 microsphere composite film and preparation method thereof
  • Poly (4-methylpentene) and SiO2 microsphere composite film and preparation method thereof
  • Poly (4-methylpentene) and SiO2 microsphere composite film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] (1) Dissolution of the polymer poly-4-methylpentene (TPX). The specific process is: select cyclohexane (0.2g) as the solvent of poly-4-methylpentene (6g), fully stir under heating and stirring conditions, set the heating temperature to 60°C, and stir for 1.5 hours;

[0047] (2) Pretreatment of the substrate. Wherein, the pretreatment of the substrate includes: firstly, the substrate is ultrasonically cleaned in deionized water and ethanol in sequence, each time lasting 10 minutes, and dried in an oven. Next, the substrate was immersed in a modification solution (1% wt / alcohol) containing a silane coupling agent for 4 hours. Finally, in order to achieve the purpose of controlling the thickness of the film, a tape with a thickness of 1000 μm was pasted around the substrate. The aforementioned substrate is a material with a flat and smooth surface. Wherein the selected substrate is a glass plate;

[0048] (3) Preparation of composite solution. Addition of SiO to poly-...

Embodiment 2

[0052] (1) Dissolution of the polymer poly-4-methylpentene (TPX). The specific process is: select trichlorethylene (5g) as the solvent of poly-4-methylpentene (0.3g), fully stir under heating and stirring conditions, the heating temperature is set to 70 ° C, and the stirring time is 2 hours;

[0053] (2) Pretreatment of the substrate. Wherein, the pretreatment of the substrate includes: firstly, the substrate is ultrasonically cleaned in deionized water and ethanol in sequence, each time lasting 10 minutes, and dried in an oven. Next, the substrate was immersed in a modification solution (1% wt / alcohol) containing a silane coupling agent for 4 hours. Finally, in order to achieve the purpose of controlling the thickness of the film, a tape with a thickness of 1000 μm was pasted around the substrate. The aforementioned substrate is a material with a flat and smooth surface. The selected substrate is a single crystal silicon wafer;

[0054] (3) Preparation of composite soluti...

Embodiment 3

[0058] (1) Dissolution of the polymer poly-4-methylpentene (TPX). The specific process is: choose chloroform (5.6g) as the solvent of poly-4-methylpentene (0.2g), fully stir under heating and stirring conditions, set the heating temperature to 50°C, and stir for 1.5 hours;

[0059] (2) Pretreatment of the substrate. Wherein, the pretreatment of the substrate includes: firstly, the substrate is ultrasonically cleaned in deionized water and ethanol in sequence, each time lasting 10 minutes, and dried in an oven. Next, the substrate was immersed in a modification solution (1% wt / alcohol) containing a silane coupling agent for 4 hours. Finally, in order to achieve the purpose of controlling the thickness of the film, a tape with a thickness of 1000 μm was pasted around the substrate. The aforementioned substrate is a material with a flat and smooth surface. Wherein the selected substrate is sapphire;

[0060] (3) Preparation of composite solution. Addition of SiO to poly-4-me...

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Abstract

The invention relates to a poly (4-methylpentene) and SiO2 microsphere composite film and a preparation method thereof. The preparation method comprises the following steps: (1) heating and stirring poly (4-methylpentene) (TPX) and a solvent for dissolution at the temperature of 0-90 DEG C to obtain a poly (4-methylpentene) solution; (2) adding SiO2 microspheres into the obtained poly (4-methylpentene) solution to obtain a TPX-SiO2 microsphere composite solution; and (3) dripping the obtained TPX-SiO2 microsphere composite solution on a substrate, then putting the substrate into a sealed container, and after the solvent is evaporated, obtaining the poly (4-methylpentene) and SiO2 microsphere composite film.

Description

technical field [0001] The present invention relates to a kind of poly-4-methylpentene (TPX) and SiO 2 The invention relates to a microsphere composite film and a preparation method thereof, which belong to the technical field of chemical preparation of organic polymer and inorganic particle composite film. Background technique [0002] Organic thin films have disadvantages such as low chemical stability, narrow temperature range, easy to be polluted, low mechanical strength, and short service life. In recent years, by incorporating inorganic particles into organic polymer films, not only the problem of difficult processing of inorganic materials has been overcome, but also some special properties (mechanics, optics, electricity, etc.) of the polymer have been enhanced. This polymer-inorganic particle composite film idea has great prospects at present and even in the future. [0003] The current chemical preparation methods of polymer-inorganic particle composite films inc...

Claims

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Application Information

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IPC IPC(8): C08J5/18C08L23/20C08K7/18
CPCC08J5/18C08J2323/20C08K7/18C08K2201/003
Inventor 高相东杨京南张彤彤吴永庆
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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