Microwave dielectric material suitable for ultra-low temperature sintering and preparation method thereof

A microwave dielectric material and ultra-low temperature technology, applied in the field of microwave dielectric materials, can solve the problems of tellurium oxide toxicity, easy moisture absorption, high price, etc., and achieve the effects of widening the selection range, stable performance and reducing volatilization

Active Publication Date: 2021-08-24
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, molybdate ultra-low temperature sintered ceramic materials take into account the advantages of environmental protection and low cost, but they are easy to absorb moisture and cannot be stored stably; tellurate microwave dielectric ceramic materials have excellent microwave dielectric properties, but tellurium oxide is toxic and expensive , not suitable for long-term applications; most tungstate and vanadate microwave dielectric materials have low loss and high sintering temperature; there are few developments for boron-based ultra-low temperature sintered microwave dielectric materials

Method used

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  • Microwave dielectric material suitable for ultra-low temperature sintering and preparation method thereof
  • Microwave dielectric material suitable for ultra-low temperature sintering and preparation method thereof
  • Microwave dielectric material suitable for ultra-low temperature sintering and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～7

[0035] Bi 2 o 3 -B 2o 3 Microwave dielectric properties of several microwave dielectric materials in the system. The Bi of these microwave dielectric materials 2 o 3 and B 2 o 3 The molar ratio between is x:y, wherein: 1≤x≤12, 1≤y24 B 2 o 39 (Bi / B=12 / 1), Bi 24 B 2 o 39 +Bi 4 B 2 o 9 (Bi / B=4 / 1), Bi 4 B 2 o 9 (Bi / B=2 / 1), Bi 4 B 2 o 9 +Bi 6 B 10 o 24 (Bi / B=1 / 1, 2 / 3), Bi 6 B 10 o 24 (Bi / B=3 / 5), Bi 6 B 10 o 24 +Bi 2 B 8 o 15 (Bi / B=1 / 3). Prepare the microwave dielectric ceramic according to the following method:

[0036] (1) B with purity ≥ 98% 2 o 3 with Bi 2 o 3 as raw material, according to Bi 2 o 3 -B 2 o 3 In the system, Bi / B=12 / 1, 4 / 1, 2 / 1, 1 / 1, 2 / 3, 3 / 5, 1 / 3 (mol ratio) for batching, put the powder into the ball mill tank, and ball mill , and then pre-fired to obtain pre-fired ceramic powder;

[0037] (2) The pre-fired ceramic powder obtained in the step (1) is subjected to wet ball milling again, after drying, adding a binder to gra...

Embodiment 8～14

[0045] Its chemical formula is Bi 6 B 10 o 24 . Prepare the microwave dielectric ceramic according to the following method:

[0046] (1) B with purity ≥ 98% 2 o 3 with Bi 2 o 3 As raw material, according to the chemical formula Bi 6 B 10 o 24 The stoichiometric ratio is used for batching, the powder is put into a ball mill tank, ball milled, and then pre-fired to obtain a pre-fired ceramic powder;

[0047] (2) The pre-fired ceramic powder obtained in the step (1) is subjected to wet ball milling again, after drying, adding a binder to granulate, and then sintering after tableting to obtain the microwave dielectric ceramic.

[0048] The ball milling in step (1) is dry ball milling, using a planetary ball mill, and the ball milling time is 2 hours. Using dry ball milling and controlling the appropriate ball milling time not only ensures uniform mixing, but also solves the problem of B during drying after wet ball milling. 2 o 3 volatility problem.

[0049] The pre-...

Embodiment 15～17

[0055] Its chemical formula is Bi 6 B 10 o 24 . Prepare the microwave dielectric ceramic according to the following method:

[0056] (1) B with purity ≥ 98% 2 o 3 with Bi 2 o 3 As raw material, according to the chemical formula Bi 6 B 10 o 24 The stoichiometric ratio is used for batching, the powder is put into a ball mill tank, ball milled, and then pre-fired to obtain a pre-fired ceramic powder;

[0057] (2) The pre-fired ceramic powder obtained in the step (1) is subjected to wet ball milling again, after drying, adding a binder to granulate, and then sintering after tableting to obtain the microwave dielectric ceramic.

[0058] The ball milling in step (1) is dry ball milling, using a planetary ball mill, and the ball milling time is 2 hours. Using dry ball milling and controlling the appropriate ball milling time not only ensures uniform mixing, but also solves the problem of B during drying after wet ball milling. 2 o 3 volatility problem.

[0059] The pre-...

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Abstract

The invention relates to a microwave dielectric material suitable for ultra-low temperature sintering and a preparation method thereof. The microwave dielectric material is Bi 2 o 3 -B 2 o 3 system, the Bi of the microwave dielectric material 2 o 3 and B 2 o 3 The molar ratio between is x:y, wherein: 1≤x≤12, 1≤y<4. Its preparation method comprises the steps: (1) with B 2 o 3 with Bi 2 o 3 as raw material, according to Bi 2 o 3 and B 2 o 3 The molar ratio between is x: y for batching, the powder is put into a ball mill jar, ball milled, and then pre-fired to obtain a pre-fired ceramic powder; (2) the pre-fired ceramic powder obtained in step (1) , performing wet ball milling again, adding binder to granulate after drying, debinding and sintering after tableting to obtain the microwave dielectric material. The invention has a simple preparation process and low preparation cost, and successfully develops a high-performance microwave dielectric material suitable for ultra-low temperature sintering by adopting an improved solid-state reaction method, and the preparation method at ultra-low temperature provides the integration of the substrate and the microwave circuit. convenient.

Description

technical field [0001] The invention relates to a microwave dielectric material, more specifically to a microwave dielectric material suitable for ultra-low temperature sintering and a preparation method thereof. Background technique [0002] As a new type of functional material, microwave dielectric materials have been widely used in microwave devices such as resonators, filters, and dielectric antennas. Low temperature co-fired ceramics (LTCC) technology is one of the core technologies of the new generation of electronic information manufacturing industry, which provides an ideal platform for the integration of passive electronic devices and the system-level packaging technology of electronic complete machines. Low temperature co-fired ceramic media is the key material of this technology. In the field of LTCC, the sintering temperature of most of the materials studied so far is around 900°C, which cannot meet the requirements of ULTCC. People have begun to pay attention ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/453C04B35/622C04B35/626C04B35/64
CPCC04B35/453C04B35/622C04B35/6261C04B35/64C04B2235/3409C04B2235/6562C04B2235/6567C04B2235/96
Inventor 戴英张倩孙思齐裴新美
Owner WUHAN UNIV OF TECH
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