Preparation method of Si-doped In<x>Al<1-x>N thin film

Abstract

The embodiment of the invention discloses a preparation method of an Si-doped In<x>Al<1-x>N thin film. The method is characterized in that magnetron sputtering is adopted, and comprises the followingsteps that Si(100) is adopted as a substrate, a metal In target, a metal Al target and a ceramic Si<3>N<4> target are mounted in a vacuum chamber, and the vacuum degree in the vacuum chamber is reduced to 10<-4>Pa or below through vacuumizing the vacuum chamber; and In<x>Al<1-x>N film preparation process parameters are set, wherein the distance between each target and the substrate is 50 mm, the vacuum pressure is 0.6 pa, the substrate temperature is 600 DEG C, the flow ratio of Ar to N<2>is 20:10, the power of the Si<3>N<4> target is set to be 20 W-40 W, the power of the In target is set to be 70 W-110 W, the power of the Al target is set to be 200 W-300 W, and after sputtering is performed for 30 min, the Si-doped In<x>Al<1-x>N film can be obtained. The method is simple in preparation operation and can efficiently and rapidly realize film forming in a large area; and meanwhile, the carrier concentration of the In<x>Al<1-x>N film is increased through doping Si into the In<x>Al<1-x>N film, so that the performance of the In<x>Al<1-x>N film is improved, and the crystallinity of the film can be improved through setting the power of each target.

Description

technical field [0001] The invention relates to the field of semiconductor electronic device material preparation, in particular to a Si-doped In x Al 1-x The preparation method of N thin film. Background technique [0002] In x Al 1-x N is a III-N group material of a ternary alloy. Because it has a continuously adjustable band gap in the range of 0.7-6.2eV, the spectrum covers the infrared to ultraviolet band, almost including the entire solar spectrum, and the critical breakdown voltage is high. , radiation resistance, good chemical stability, and high thermal conductivity make it suitable for electronic equipment under harsh conditions, and has a very good prospect in the application of a new generation of microelectronics and optoelectronic devices. [0003] Traditional In x Al 1-x The preparation methods of N thin film are: using MOCVD method to prepare In on sapphire substrate with ammonia gas as nitrogen source. x Al 1-x N thin film, but the program operation ...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the embodiments of the present invention is to provide a Si-doped In x Al 1-x The preparation method of N thin film, in order to solve the prior art proposed in the above-mentioned technical problems In x Al 1-x The preparation of N thin film is complicated, the growth rate is slow, and the technical problems of poor crystallinity

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