Photoelectric integrated semiconductor device and preparation process thereof

Abstract

The invention relates to a photoelectric integrated semiconductor device and a preparation process thereof. The preparation process comprises the following steps: forming a first semiconductor structure and a second semiconductor structure on a substrate; forming a first isolation layer; forming an n+ + Si layer, and forming an n trap at the same time; forming a PMOS and an NMOS, and performing rapid annealing on the whole device; etching the part above the n+ + Si layer, and forming an n+ + doped Ge layer, a p+ doped Ge layer, a p+ + doped Si layer and a second isolation layer on the n+ + Silayer in sequence; forming a light emitting structure, a waveguide structure and a detector structure; forming a polysilicon gate and a first electrode; forming a pressure stress film on the waveguidestructure and the NMOS; forming a tensile stress film on the detector structure and the NMOS; and respectively forming second electrodes on the substrate, the detector structure and the first isolation layer. The preparation process of the photoelectric integrated semiconductor device has high process compatibility, the prepared semiconductor device has high device compatibility, and the opticalcoupling efficiency is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a photoelectric integrated semiconductor device and a preparation process thereof. Background technique [0002] With the development of optical communication, optical information processing, optical computing, optical display and other disciplines, people have a strong interest in optoelectronic integration with small size, light weight, stable and reliable operation, high-speed operation and high parallelism. The progress of advanced manufacturing technology makes it possible to integrate optical, optical / electrical and electronic components on a single structure or a single substrate, and constitute an optoelectronic integrated circuit (OEIC) with a single function or multiple functions. [0003] OEIC refers to a monolithic optoelectronic integrated circuit that integrates optical devices and electronic components on the same substrate using optoelectronic t...

AI Technical Summary

Problems solved by technology

There are still many technical problems in the existing OEIC to realize the integration of optical devices and electronic components, including: how to reduce the height difference and spacing between optical devices and electronic components, and improve the structural compatibility of optical devices and electronic components; Process compatibility between devices and electronic devices; how to solve a series of problems such as light coupling efficiency

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