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Quantum dot light-emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of low luminous efficiency of quantum dot light-emitting diodes

Active Publication Date: 2020-07-07
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above deficiencies in the prior art, the object of the present invention is to provide a quantum dot light-emitting diode and its preparation method, aiming to solve the problem of low luminous efficiency of the existing quantum dot light-emitting diodes

Method used

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  • Quantum dot light-emitting diode and preparation method thereof

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specific Embodiment 1

[0053] Specific embodiment 1, the preparation steps of the quantum dot light-emitting diode device are as follows:

[0054] First, the patterned ITO substrate was placed in acetone, washing solution, deionized water, and isopropanol in sequence for ultrasonic cleaning, and each step of ultrasonic cleaning lasted for about 15 minutes. After the ultrasound is completed, place the ITO substrate in a clean oven to dry for later use.

[0055] After the ITO substrate was dried, the surface of the ITO substrate was treated with UV-ozone for 5 minutes to further remove the organic matter attached to the surface of the ITO substrate and improve the work function of the ITO substrate.

[0056] Then, deposit a layer of hole injection layer PEDOT:PSS on the ITO substrate processed in the previous step. Done in the air.

[0057] Next, place the dried substrate coated with the hole injection layer in a nitrogen atmosphere, deposit a layer of hole transport layer material TFB, the thicknes...

specific Embodiment 2

[0061] Specific embodiment two, the preparation steps of the quantum dot light-emitting diode device are as follows:

[0062] First, the patterned ITO substrate was placed in acetone, washing solution, deionized water, and isopropanol in sequence for ultrasonic cleaning, and each step of ultrasonic cleaning lasted for about 15 minutes. After the ultrasound is completed, place the ITO substrate in a clean oven to dry for later use.

[0063] After the ITO substrate was dried, the surface of the ITO substrate was treated with UV-ozone for 5 minutes to further remove the organic matter attached to the surface of the ITO substrate and improve the work function of the ITO substrate.

[0064] Then, deposit a layer of hole injection layer PEDOT:PSS on the ITO substrate processed in the previous step. Done in the air.

[0065] Next, place the dried substrate coated with the hole injection layer in a nitrogen atmosphere to deposit a layer of hole transport layer material PVK with a th...

specific Embodiment 3

[0069] Specific embodiment three, the preparation steps of the quantum dot light-emitting diode device are as follows:

[0070] First, the patterned ITO substrate was placed in acetone, washing solution, deionized water, and isopropanol in sequence for ultrasonic cleaning, and each step of ultrasonic cleaning lasted for about 15 minutes. After the ultrasound is completed, place the ITO substrate in a clean oven to dry for later use.

[0071] After the ITO substrate was dried, the surface of the ITO substrate was treated with UV-ozone for 5 minutes to further remove the organic matter attached to the surface of the ITO substrate and improve the work function of the ITO substrate.

[0072] Then, deposit a layer of hole injection layer PEDOT:PSS on the ITO substrate processed in the previous step. Done in the air. .

[0073] Next, place the dried substrate coated with the hole injection layer in a nitrogen atmosphere to deposit a layer of hole transport layer material PVK with...

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Abstract

The invention discloses a quantum dot light emitting diode and a preparation method thereof. The method comprises the following steps: providing an anode; preparing a quantum dot light-emitting layeron the anode; and preparing a cathode on the quantum dot light-emitting layer to obtain the quantum dot light-emitting diode. The quantum dot light-emitting layer is prepared by the following method:providing a mixed solution comprising quantum dots, a solvent and an additive, wherein the additive is alkane with the carbon atom number of 6-13, and carbon atoms at two ends of a main chain of the alkane are connected with iodine atoms; and depositing the mixed solution on an anode to form a film layer, and volatilizing an additive in the film layer to obtain the quantum dot light-emitting layer. According to the method, Dexter energy transfer between the quantum dots can be reduced, and energy loss is reduced, so that the light emitting efficiency of the device is improved.

Description

technical field [0001] The invention relates to the field of quantum dot light emitting devices, in particular to a quantum dot light emitting diode and a preparation method thereof. Background technique [0002] In recent years, with the rapid development of display technology, quantum dot light-emitting diodes (QLEDs) using semiconductor quantum dots (QDs) materials as the light-emitting layer have received extensive attention. Quantum dot light-emitting diodes have good characteristics such as high color purity, high luminous efficiency, adjustable luminous color, and stable devices, making them have broad application prospects in flat panel displays, solid-state lighting and other fields. Although the performance of existing QLEDs (including device efficiency and lifetime) has been greatly improved through the improvement of quantum dot materials and the continuous optimization of QLED device structure, its efficiency is still far from the requirements of industrial prod...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56H01L51/00
CPCH10K71/10H10K50/115H10K71/00
Inventor 李龙基曹蔚然钱磊
Owner TCL CORPORATION