Room-temperature blocky multiferroic single crystal and preparation method thereof

A room temperature and bulk technology is applied in the field of room temperature bulk multiferroic single crystal ScxGa2-x-yFeyO3 and its preparation, and can solve the problems of inability to obtain a homogeneous bulk single crystal, changes in crystal structure, changes in composition distribution, etc. To achieve the effect of easy control, prevention of segregation and uniform doping

Pending Publication Date: 2020-07-10
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Although there have been many studies on GaFeO 3 Research on a series of polycrystalline and thin films, but there is no GaFeO with excellent room temperature ferroelectric properties after element doping 3 The research reports on single crystals are mainly because element doping will cause changes in crystal structure, changes in composition distribution, and precipitation of second-phase impurities, making it impossible to obtain homogeneous large single crystals.

Method used

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  • Room-temperature blocky multiferroic single crystal and preparation method thereof
  • Room-temperature blocky multiferroic single crystal and preparation method thereof
  • Room-temperature blocky multiferroic single crystal and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0055] (1) Ingredients: Sc with a purity of not less than 99.99% 2 o 3 , Fe 2 o 3 and Ga 2 o 3 The powder is prepared according to the stoichiometric ratio of Sc x Ga 2-x-y Fe y o 3 where x=0.1, y=1.25;

[0056] (2) Preparation of material rod: ball mill the mixture prepared in step (1) for 24 hours, dry at 100°C for 2 hours, pre-fire at 1200°C for 15 hours, and then grind again, then put the ground powder into a long strip Sealed in a balloon, made into a rod shape under an isostatic pressure of 60-70 MPa, and then removed the balloon to obtain a rod;

[0057] (3) Sintering: Sinter the material rod obtained in step (2) at 1350° C. for 15 hours in a high-temperature furnace to obtain a dense polycrystalline rod, which is used for crystal growth;

[0058] (4) Crystal growth: the polycrystalline rod in step (3) is used as the feeding rod and the feeding rod, and the feeding rod is hung on the upper end of the light floating zone furnace with a platinum wire, and the fe...

Embodiment 2

[0060] (1) Ingredients: Sc with a purity of not less than 99.99% 2 o 3 , Fe 2 o 3 and Ga 2 o 3 The powder is prepared according to the stoichiometric ratio of Sc x Ga 2-x-y Fe y o 3 where x=0.3, y=0.85;

[0061] (2) Preparation of material rod: ball mill the mixture prepared in step (1) for 24 hours, dry at 100°C for 2 hours, pre-fire at 1300°C for 10 hours, and then grind again, and then put the ground powder into a long strip Sealed in a balloon, made into a rod shape under an isostatic pressure of 60-70 MPa, and then removed the balloon to obtain a rod;

[0062] (3) Sintering: Sinter the material rod prepared in step (2) in a high temperature furnace at 1350° C. for 15 hours to obtain a dense polycrystalline rod, which is used for crystal growth;

[0063] (4) Crystal growth: hang the feeding rod on the upper end of the light floating zone furnace with platinum wire, fix the feeding rod (using the seed crystal) on the seed crystal holder, install it at the lower en...

Embodiment 3

[0065] (1) Ingredients: Sc with a purity of not less than 99.99% 2 o3 , Fe 2 o 3 and Ga 2 o 3 The powder is prepared according to the stoichiometric ratio of Sc x Ga 2-x-y Fe y o 3 where x=0.1, y=0.95;

[0066] (2) Preparation of material rod: ball mill the mixture prepared in step (1) for 24 hours, dry at 100°C for 2 hours, pre-fire at 1300°C for 10 hours, and then grind again, and then put the ground powder into a long strip Sealed in a balloon, made into a rod shape under an isostatic pressure of 60-70 MPa, and then removed the balloon to obtain a rod;

[0067] (3) Sintering: Sinter the material rod obtained in step (2) at 1350° C. for 15 hours in a high-temperature furnace to obtain a dense polycrystalline rod, which is used for crystal growth;

[0068] (4) Crystal growth: Hang the feeding rod on the upper end of the laser floating zone furnace with a platinum wire, fix the feeding rod (using the seed crystal) on the seed crystal holder, install it on the lower en...

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Abstract

The invention discloses a room-temperature blocky multiferroic single crystal and a preparation method thereof. The chemical composition of the single crystal is ScxGa2-x-yFeyO3, x is larger than 0 and smaller than 0.4, and y is larger than 0.8 and smaller than or equal to 1.3.

Description

technical field [0001] The invention relates to the field of crystal growth and multiferroic functional materials, in particular to room temperature bulk multiferroic single crystal Sc x Ga 2-x- y Fe y o 3 (0<x<0.4, 0.8<y≤1.3) and a preparation method thereof. Background technique [0002] Multiferroic materials with both ferroelectricity and ferromagnetism have become one of the hot fields in condensed matter physics and material science in recent years. Single-phase multiferroic materials with significant magnetoelectric coupling effects at room temperature are used in sensors, drives and It has important application value in the manufacturing industry of electric components such as electric magnetic memory memory. A new generation of magnetoelectric random access memory can be developed by using the magnetoelectric coupling characteristics of data storage. It not only has the advantage of fast reading of magnetic random access memory, but also has the advan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/22C30B13/00C30B1/10
CPCC30B1/10C30B13/00C30B29/22
Inventor 余野建定王慧李勤张阳夏朝阳方婧红倪津崎汪超越贺欢
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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